Infineon Technologies CY7C1372DV25-167AXCT
- Part No.:
- CY7C1372DV25-167AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1372DV25-167AXCT.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1372DV25-167AXCT from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It operates at 167 MHz with 3.4 ns clock-to-output time, uses single 2.5 V core (VDD) and I/O (VDDQ) supplies, supports linear/interleaved burst modes, and features byte-write capability via BWa–BWb inputs.
For engineers reviewing the CY7C1372DV25-167AXCT datasheet, CY7C1372DV25-167AXCT pinout, CY7C1372DV25-167AXCT application, or CY7C1372DV25-167AXCT equivalent, key selection criteria include its 167 MHz zero-wait-state operation, synchronous self-timed writes, ZZ sleep mode, JEDEC-compliant 100-pin TQFP package, and compatibility with ZBT™-based system designs.
Technical Context
The device implements fully registered pipelined architecture: all address, control, and data inputs pass through input registers on CLK rising edge; all outputs are latched by output registers on the same edge. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states.
Burst addressing is controlled by ADV/LD and MODE pins-linear or interleaved order-and synchronized write cycles use internal self-timed circuitry qualified by WE, CEN, and byte-write enables. Three chip enables (CE1, CE2, CE3) provide hierarchical bank selection, while asynchronous OE manages output three-state timing independent of clock phase.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 organization), enabling compact high-bandwidth buffer storage in packet-switching ASIC interfaces. |
| Max Clock Frequency | 167 MHz - supports sustained 167 MT/s throughput with zero wait states in synchronous bus environments. |
| Access Time | 3.4 ns clock-to-output - ensures deterministic timing alignment for DDR-adjacent controller interfaces. |
| Supply Voltages | VDD = 2.5 V ± 0.2 V (core); VDDQ = 2.5 V ± 0.2 V (I/O) - simplifies power delivery with single-voltage rail design. |
| Burst Capability | Linear or interleaved burst order - selectable via MODE pin strap, matching legacy ZBT™ system timing expectations. |
| Sleep Mode | ZZ pin-controlled deep-sleep mode - reduces standby current to ≤70 mA while preserving data integrity. |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm, Pb-free) - JEDEC-standard footprint compatible with automated SMT assembly. |
Pinout & Package
Package: 100-pin TQFP (14 mm × 20 mm × 1.4 mm, Pb-free, JEDEC standard). Pinout validated per Cypress Document 38-05558 Rev. *P, Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus sampled on CLK rising edge; selects one of 1M memory locations. |
| BWa, BWb | Byte Write Select | Active-low synchronous controls for 18-bit data width: BWa enables DQa/DQPa (9 bits), BWb enables DQb/DQPb (9 bits). |
| CLK | Clock Input | Rising-edge-triggered master clock; qualified by CEN - defines all synchronous timing boundaries. |
| CEN | Clock Enable | Active-low synchronous gate for CLK - suspends operation without deselecting device, extending previous cycle. |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous enable hierarchy: CE1/CE3 active-low, CE2 active-high - enables multi-bank memory mapping. |
| OE | Output Enable | Asynchronous active-low control - overrides synchronous logic during write data phase to prevent bus contention. |
| ADV/LD | Address Counter Control | High = advance internal burst counter; Low = load new address - enables seamless burst sequencing without external address generation. |
| MODE | Burst Order Strap | Static input: HIGH = interleaved burst; LOW = linear burst - sets burst address sequence at power-up, must remain stable. |
| ZZ | Deep Sleep Control | Asynchronous active-low input - forces device into low-power sleep mode; pin must be externally tied to GND per errata. |
| DQa–DQb, DQPa–DQPb | Data I/O | 18-bit bidirectional data bus + 2-bit parity (DQPa/DQPb); direction controlled by OE and internal write-read state machine. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited consecutive read/write transitions with no wait states - critical for real-time packet buffering in switch fabric controllers. |
| Fully Registered Pipelined Interface | All inputs and outputs synchronized to CLK rising edge - eliminates setup/hold violations and simplifies timing closure in FPGA-ASIC interconnects. |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - improves reliability across voltage/temperature corners. |
| Byte-Write Select Logic | Independent BWa/BWb control over two 9-bit subwords - allows partial-word updates without read-modify-write cycles in protocol header manipulation. |
| IEEE 1149.1 JTAG Support | Built-in boundary scan (BYPASS mode only per errata) - enables board-level interconnect testing without requiring functional access. |
Applications
| Telecom Line Card Buffering | Network Packet Switch Fabric |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: High-speed dual-port buffer interfacing between SerDes PHY and traffic manager ASIC. Use Value: 167 MHz zero-wait-state operation sustains 3.0 Gbps aggregate throughput with deterministic latency for QoS enforcement. |
Use Scenario: Temporary storage of variable-length packets during crossbar arbitration in Layer 2/3 switches. IC Role / Device Role / Timing Role: Pipelined SRAM acting as first-level shared memory for ingress queue management. Use Value: NoBL™ architecture enables back-to-back read-after-write without pipeline stalls - increasing effective bandwidth by >35% vs. async SRAM. |
| Baseband Processing in 4G LTE eNodeB | Industrial Real-Time Motion Controller |
|
Use Scenario: Holding FFT/IFFT intermediate results and channel estimation coefficients in digital baseband processors. IC Role / Device Role / Timing Role: Burst-mode memory co-processor synchronized to DSP clock domain via CLK/CEN handshake. Use Value: Linear/interleaved burst support matches FFT address stride patterns - reducing external address generation overhead by 50%. |
Use Scenario: Buffering encoder feedback and motion profile tables in servo drive microcontrollers. IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced to ARM Cortex-R4 real-time core via AMBA AHB bus bridge. Use Value: ZZ sleep mode cuts standby current to ≤70 mA during idle motion phases - extending thermal margin in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 16-Mbit (512K × 32), 167 MHz, 3.5 ns tCO, 3.3 V I/O only (no VDDQ separation) | Lacks byte-write granularity and ZZ sleep mode; requires level-shifting for 2.5 V core systems | Choose when interfacing to 3.3 V-only controllers and lower density suffices. |
| ISSI IS61WV102418BLL-167TQLI | 18-Mbit (1M × 18), 167 MHz, 3.4 ns tCO, 2.5 V core/I/O, but no NoBL™ or burst mode flexibility | Supports only single-access mode - no burst or ADV/LD functionality; simpler timing but lower throughput | Choose for cost-sensitive applications where burst efficiency is not required. |
Compared with IDT72V2115L16PF and IS61WV102418BLL-167TQLI, CY7C1372DV25-167AXCT uniquely delivers NoBL™-enabled back-to-back operation, MODE-selectable burst order, and dedicated 2.5 V VDDQ for I/O voltage isolation - making it optimal for high-efficiency, low-latency data path buffering.
Availability
CY7C1372DV25-167AXCT is available at Aetrix Electronics and suitable for telecom line card buffering, network packet switch fabric, and industrial real-time motion controller designs requiring stable component supply and long-term obsolescence mitigation.
Supply support for CY7C1372DV25-167AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC mixed-signal ICs, and USB/USB-C solutions.
CY7C1372DV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency data buffering in telecom infrastructure, enterprise switching, and real-time embedded control systems.
FAQ
What is the function of the MODE pin on CY7C1372DV25-167AXCT?
The MODE pin is a static strap input that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. It must be held stable during operation and is sampled at power-up. This setting determines how the internal address counter increments during burst reads/writes, directly impacting compatibility with legacy ZBT™ controller firmware.
How does the ZZ pin operate, and what is the errata requirement?
The ZZ pin enables deep-sleep mode when asserted LOW, reducing standby current to ≤70 mA. Per Cypress errata on page 30 of Document 38-05558, ZZ (Pin 64 in TQFP) must be externally tied to ground - it is not internally biased and will not function correctly if left floating or pulled HIGH. This is a mandatory hardware requirement for reliable sleep-mode entry.
Can CY7C1372DV25-167AXCT be used in place of CY7C1370DV25 devices?
No - they are not pin-compatible or functionally interchangeable. CY7C1372DV25 is 1M × 18 (18-bit data bus), while CY7C1370DV25 is 512K × 36 (36-bit bus). Their pinouts differ significantly: CY7C1372DV25 uses BWa/BWb and DQa/DQb/DQPa/DQPb; CY7C1370DV25 uses BWa–BWd and four full 9-bit data groups. Board layout and controller interface logic are incompatible.
Is JTAG boundary scan functional on CY7C1372DV25-167AXCT?
JTAG (IEEE 1149.1) is physically present but not guaranteed functional per errata on page 30: "JTAG testing should be performed with these devices in BYPASS mode as the JTAG functionality is not guaranteed." The TAP controller lacks full production validation; therefore, boundary scan should not be relied upon for production test - only BYPASS mode is supported for basic chain integrity checks.
CY7C1372DV25-167AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1372DV25-167AXCT FAQ
1.How can I place an order for CY7C1372DV25-167AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1372DV25-167AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1372DV25-167AXCT reliable?
The price and inventory of CY7C1372DV25-167AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372DV25-167AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1372DV25-167AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1372DV25-167AXCT transactions.
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4.How is shipping managed for CY7C1372DV25-167AXCT?
CY7C1372DV25-167AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1372DV25-167AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1372DV25-167AXCT?
For technical support, including CY7C1372DV25-167AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372DV25-167AXCT requirements.
6.How does Aetrix verify that CY7C1372DV25-167AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1372DV25-167AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372DV25-167AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1372DV25-167AXCT?
All CY7C1372DV25-167AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372DV25-167AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1372DV25-167AXCT part is unused and in its original packaging.
Return procedure for CY7C1372DV25-167AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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