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Infineon Technologies CY7C1372KV25-167AXCT
- Part No.:
- CY7C1372KV25-167AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1372KV25-167AXCT.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,074
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Product details
Overview
CY7C1372KV25-167AXCT from Cypress Semiconductor is a 2.5 V, 18-Mbit (1M × 18) synchronous pipelined SRAM with NoBL™ architecture, designed for zero-wait-state back-to-back read/write operations in high-throughput memory subsystems. It supports 167 MHz bus operation (tCO = 3.4 ns), features byte write capability via BWa/BWb, fully registered I/O, and dual power rails (VDD = 2.5 V, VDDQ = 2.5 V).
For engineers reviewing the CY7C1372KV25-167AXCT datasheet, CY7C1372KV25-167AXCT pinout, CY7C1372KV25-167AXCT application, or CY7C1372KV25-167AXCT equivalent, key selection considerations include burst order control (MODE pin), synchronous self-timed writes, JTAG boundary scan compliance, ZZ sleep mode support, and TQFP-100 package compatibility with legacy ZBT™ designs.
Technical Context
The device implements a fully synchronous, rising-edge-triggered pipeline: all address, control, and data inputs are registered on CLK's rising edge, and outputs are latched on the same edge. Internal self-timed write logic eliminates external write pulse timing constraints, while ADV/LD controls burst counter advancement or new address loading.
NoBL™ architecture enables true consecutive read/write transitions without bus latency-data is valid every clock cycle during burst sequences. The MODE pin selects linear or interleaved burst order, and three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) provide flexible bank decoding for depth expansion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1,048,576 × 18 bits) - supports 1M-word wide-18 interface for high-bandwidth buffering. |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with zero wait states in pipelined operation. |
| Access Time (tCO) | 3.4 ns - guaranteed clock-to-output delay at 167 MHz, critical for timing closure in FPGA/ASIC memory interfaces. |
| Supply Voltages | VDD = 2.5 V ± 0.2 V, VDDQ = 2.5 V ± 0.2 V - separate core/I/O rails allow independent noise management and signal integrity optimization. |
| Burst Capability | Linear or interleaved burst order - selectable via MODE pin; supports standard cache-line fetch patterns in networking and video pipelines. |
| Byte Write Control | BWa and BWb - enable independent 9-bit write masking for DQa/DQPa and DQb/DQPb, reducing bus contention during partial writes. |
| Sleep Mode | ZZ pin - reduces standby current to ≤ 50 µA, enabling low-power idle states without clock gating complexity. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus; latched on rising CLK edge when CEN = LOW and ADV/LD = LOW. |
| BWa, BWb | Byte Write Select | Active-LOW controls write enable for DQa/DQPa (BWa) and DQb/DQPb (BWb); qualified by WE and CLK. |
| CLK | Clock Input | Rising-edge-triggered master clock; masked by CEN - deasserting CEN extends previous cycle without deselection. |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous enable (CE1/CE3 active-LOW, CE2 active-HIGH) for multi-chip depth expansion and bank isolation. |
| OE | Output Enable | Asynchronous active-LOW; output drivers are synchronously three-stated during write data phase regardless of OE state. |
| ADV/LD | Burst Address Control | When LOW: loads new address; when HIGH: advances internal burst counter - essential for sequential access efficiency. |
| MODE | Burst Order Select | Strap pin: HIGH = interleaved burst, LOW = linear burst; must be stable during operation; floating defaults to HIGH. |
| ZZ | Deep Sleep Control | Active-LOW entry into ultra-low-power mode; retains data but disables clocks and I/O drivers until exit condition met. |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables unlimited true back-to-back read/write cycles with no bus turnaround penalty - eliminates inter-access dead cycles in real-time packet buffering. |
| Synchronous Self-Timed Writes | On-chip write timing control removes dependency on external write pulse width or setup/hold margins - simplifies FPGA controller logic. |
| JTAG Boundary Scan (IEEE 1149.1) | Full scan chain support with TDI/TDO/TCK/TMS pins - enables board-level interconnect test and in-system debug without additional test fixtures. |
| Dual Power Rails | Independent VDD (core) and VDDQ (I/O) supplies - allows optimized noise decoupling and voltage scaling for mixed-signal SoC integration. |
| Pipelined Output Buffer Control | Internally self-timed output enable eliminates need for asynchronous OE timing coordination - reduces PCB routing complexity and timing skew risk. |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with line-rate throughput. IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly to MAC controller with 167 MT/s sustained bandwidth. Use Value: NoBL™ architecture ensures zero-wait-state transitions between frame ingress (write) and egress (read), eliminating packet drop under full load. |
Use Scenario: Capturing high-resolution analog waveform samples at 100+ MS/s in automated test systems. IC Role / Device Role / Timing Role: High-speed acquisition FIFO with deterministic latency and burst-aligned readout to host processor. Use Value: 3.4 ns tCO and fully registered I/O guarantee precise sample timestamp alignment across multiple capture channels. |
| Video Frame Synchronization | Industrial PLC Data Logging |
|
Use Scenario: Aligning asynchronous HDMI input and DisplayPort output streams in broadcast-grade video scalers. IC Role / Device Role / Timing Role: Dual-port frame buffer supporting simultaneous write (input stream) and read (output stream) at pixel-clock rates. Use Value: Byte write capability (BWa/BWb) enables efficient chroma subsampling updates without full-line overwrites, reducing memory bandwidth pressure. |
Use Scenario: Cyclic logging of sensor data (temperature, pressure, vibration) in harsh-environment programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding last 10k samples before flash transfer; powered by backup battery during main supply loss. Use Value: ZZ sleep mode draws ≤50 µA, extending battery life to >1 year while preserving volatile log data integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 16-Mbit (512K × 32), 167 MHz, 3.3 V I/O only, no VDDQ separation - requires level-shifting for 2.5 V systems. | Lacks MODE-selectable burst order and ZZ sleep mode; uses different byte write encoding (BW0–BW3). | Choose only if system already uses 3.3 V I/O infrastructure and does not require deep-sleep power savings. |
| ISSI IS61WV102418BLL-167TQLI | 18-Mbit (1M × 18), 167 MHz, 2.5 V core/I/O, but no JTAG, no ZZ mode, and fixed linear burst only. | Missing ADV/LD-controlled burst advance and MODE strap - limits flexibility in cache-coherent or multi-protocol buffer designs. | Select when JTAG testability and burst-order agility are non-critical, and cost sensitivity outweighs feature parity. |
Compared with IDT72V2115L16PF and IS61WV102418BLL-167TQLI, CY7C1372KV25-167AXCT uniquely delivers integrated sleep control, configurable burst sequencing, and true 2.5 V I/O compatibility - making it optimal for power-constrained, multi-protocol, and test-intensive embedded memory subsystems.
Availability
CY7C1372KV25-167AXCT is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, video frame synchronization, and industrial PLC data logging requiring stable component supply across extended production lifecycles.
Supply support for CY7C1372KV25-167AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1372KV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT™ SRAMs in systems demanding deterministic, zero-latency memory access for real-time data streaming and buffering.
FAQ
What is the function of the MODE pin on CY7C1372KV25-167AXCT?
The MODE pin selects burst address sequence order: pulled HIGH (or left floating) enables interleaved burst mode; pulled LOW enables linear burst mode. This setting must remain static during operation and is sampled at power-up or reset. Interleaved mode aligns with industry-standard cache line fetch patterns used in networking ASICs, while linear mode suits video line buffers and sequential DMA transfers.
Can CY7C1372KV25-167AXCT operate with only VDD powered, leaving VDDQ unconnected?
No. Both VDD (2.5 V core) and VDDQ (2.5 V I/O) must be powered within specification (2.5 V ± 0.2 V) for functional operation. Leaving VDDQ unpowered violates absolute maximum ratings and will cause I/O driver failure, data corruption, and potential latch-up. The separate rail design enables independent decoupling but mandates dual-supply biasing.
How does the ZZ (sleep) mode interact with ongoing burst reads?
Asserting ZZ LOW during an active burst read terminates the burst after the current word is output and places outputs in high-impedance state. Internal memory array remains powered and data-retentive. Upon ZZ deassertion, the device resumes normal operation on the next valid CLK edge with CEN LOW - no reinitialization or address reload is required.
Is CY7C1372KV25-167AXCT pin-compatible with CY7C1370KV25-167AXCT?
No. Although both share the same 100-pin TQFP package and many control signals, CY7C1370KV25 is a 512K × 36 device with four byte-write enables (BWa–BWd) and corresponding DQc/DQd/DQPc/DQPd I/Os, whereas CY7C1372KV25 is 1M × 18 with only BWa/BWb and DQa/DQb/DQPa/DQPb - pin assignments for data and parity lines differ significantly.
CY7C1372KV25-167AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1372KV25-167AXCT FAQ
1.How can I place an order for CY7C1372KV25-167AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1372KV25-167AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1372KV25-167AXCT reliable?
The price and inventory of CY7C1372KV25-167AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372KV25-167AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1372KV25-167AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1372KV25-167AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1372KV25-167AXCT?
CY7C1372KV25-167AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1372KV25-167AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1372KV25-167AXCT?
For technical support, including CY7C1372KV25-167AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372KV25-167AXCT requirements.
6.How does Aetrix verify that CY7C1372KV25-167AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1372KV25-167AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372KV25-167AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1372KV25-167AXCT?
All CY7C1372KV25-167AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372KV25-167AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1372KV25-167AXCT part is unused and in its original packaging.
Return procedure for CY7C1372KV25-167AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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