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Infineon Technologies CY7C1372KV33-167AXIT

Part No.:
CY7C1372KV33-167AXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1372KV33-167AXIT.pdf
Description:
IC SRAM 18MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,720

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Product details

Overview

CY7C1372KV33-167AXIT from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory subsystems in networking and telecom infrastructure. It operates at 167 MHz with 3.4 ns maximum access time, supports synchronous self-timed writes and burst reads (linear/interleaved), and uses 3.3 V core (VDD) and 2.5 V I/O (VDDQ) supplies.

For engineers reviewing the CY7C1372KV33-167AXIT datasheet, CY7C1372KV33-167AXIT pinout, CY7C1372KV33-167AXIT application, or CY7C1372KV33-167AXIT equivalent, key selection criteria include zero-wait-state back-to-back read/write capability, byte-write control via BWa/BWb, JTAG boundary-scan support, ZZ sleep mode, and ECC-enabled soft-error resilience in mission-critical systems.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are sampled on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. The internal burst logic supports both linear and interleaved address sequences, selected by the MODE strap pin.

It integrates synchronous self-timed write circuitry, eliminating external write timing constraints, and features internally controlled output buffer timing that removes dependency on asynchronous OE for tri-state management during writes. ECC encoding/decoding occurs on-chip, correcting single-bit errors and detecting double-bit errors in real time.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1M × 18 configuration)
Max Clock Frequency 167 MHz - enables sustained 167 MT/s throughput with zero wait states
Access Time 3.4 ns - defines minimum clock-to-output delay for timing budgeting
VDD / VDDQ 3.3 V core / 2.5 V I/O - separates power domains for noise isolation and compatibility with 2.5 V logic interfaces
ECC Support On-chip single-bit error correction and double-bit error detection - reduces SER in radiation-prone environments
Burst Mode Linear or interleaved - selectable via MODE pin; determines address increment pattern for sequential accesses
Byte Write Control BWa and BWb - enable independent write masking of two 9-bit data groups (DQa/DQPa and DQb/DQPb)

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit synchronous address bus; sampled on rising CLK edge to select 1M-word location
BWa, BWb Byte Write Select Active-low synchronous controls for 9-bit DQa/DQPa and DQb/DQPb groups; qualified by WE
CLK Clock Input Rising-edge-triggered master clock; gated by CEN to suspend operation without deselection
CEN Clock Enable Active-low synchronous signal; masks CLK while preserving internal state and extending previous cycle
CE1, CE2, CE3 Chip Enable Three-level synchronous bank select (CE1/CE3 active low, CE2 active high) for multi-SRAM systems
OE Output Enable Asynchronous active-low control; masked automatically during write data phase to prevent bus contention
ZZ Sleep Input Asynchronous active-high entry into low-power sleep mode; retains data with reduced current draw
DQa–DQb, DQPa–DQPb Data I/O 18-bit bidirectional data + 2-bit parity bus; direction controlled by OE and internal write/read state
MODE Configuration Strap Static input selecting burst order: HIGH = interleaved, LOW = linear; must be stable during operation
VDD, VDDQ, VSS Power/Ground Dedicated 3.3 V core (VDD), 2.5 V I/O (VDDQ), and ground (VSS) pins for supply decoupling and noise control

Key Features

Feature Design Value
No Bus Latency™ (NoBL) Architecture Enables true back-to-back read/write operations with no pipeline stalls - critical for packet buffering in switches/routers
Synchronous Self-Timed Writes Eliminates external write pulse width and setup/hold timing constraints - simplifies controller design and improves timing margin
On-Chip ECC (Error Correction Code) Corrects single-bit errors and detects double-bit errors in real time - meets reliability requirements for telecom base stations and industrial controllers
Flexible Burst Ordering Configurable linear or interleaved burst via MODE pin - aligns with legacy ZBT or modern DDR-style memory controller expectations
JTAG Boundary Scan (IEEE 1149.1) Supports IEEE-compliant test access port (TAP) for board-level diagnostics and production testing without additional test fixtures

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: High-speed packet buffering in Layer 2/3 Ethernet switches handling 10 Gbps+ line rates with variable packet sizes.

IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO with zero-latency switching between read and write cycles.

Use Value: NoBL architecture sustains 167 MT/s back-to-back transfers, eliminating wait states and enabling deterministic latency under bursty traffic loads.

Use Scenario: Control-plane memory in 4G/LTE baseband units requiring fault-tolerant storage for configuration tables and protocol state.

IC Role / Device Role / Timing Role: ECC-protected SRAM storing critical firmware metadata and signaling stack variables accessed synchronously by ARM-based control processors.

Use Value: On-chip ECC reduces uncorrectable error rate by >99% compared to non-ECC SRAM, meeting ITU-T G.8262 telecom reliability standards.

Industrial PLC Data Logging Avionics Data Acquisition Buffer

Use Scenario: Real-time logging of sensor inputs (temperature, pressure, vibration) in programmable logic controllers operating in electrically noisy factory environments.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as circular buffer between ADC interface and ARM Cortex-M7 application processor.

Use Value: ZZ sleep mode reduces standby current to <50 µA while retaining data - extends battery life during idle periods without external retention circuitry.

Use Scenario: Buffered acquisition of flight sensor data (accelerometers, gyros) in DO-254-certifiable avionics modules where SEU resilience is mandatory.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM providing temporary storage for time-stamped telemetry before CRC-verified transfer to flash.

Use Value: Neutron soft-error immunity validated per MIL-STD-883H Method 1019.8 - achieves <1E-12 FIT/bit in aircraft cabin neutron flux environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L15PF 16-Mbit (512K × 32), 15 ns access, no ECC, 3.3 V only (no VDDQ separation) Lacks on-chip ECC and dual-voltage I/O; requires external error handling and level-shifting for 2.5 V interfaces Select when cost sensitivity outweighs ECC requirement and system already uses 3.3 V I/O logic
ISSI IS61WV102418BLL-167TQLI 18-Mbit (1M × 18), 167 MHz, no ECC, supports 2.5/3.3 V I/O but lacks JTAG and ZZ sleep Missing boundary scan and low-power sleep mode - limits testability and power optimization in portable/embedded designs Select for simpler, lower-cost implementations where JTAG test coverage and ultra-low standby current are not required

Compared with IDT72V2115L15PF and IS61WV102418BLL-167TQLI, CY7C1372KV33-167AXIT uniquely combines ECC, dual-voltage I/O, JTAG, and ZZ sleep in a single 100-pin TQFP package - making it the only option meeting full telecom and avionics functional safety and testability requirements at 167 MHz.

Availability

CY7C1372KV33-167AXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for CY7C1372KV33-167AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1372KV33-167AXIT belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, zero-wait-state memory subsystems in high-speed packet processing and real-time control applications.

FAQ

What is the function of the MODE pin on CY7C1372KV33-167AXIT?

The MODE pin is a static configuration strap that selects burst address order: pulled HIGH (or left floating) enables interleaved burst mode, while pulled LOW selects linear burst mode. It must remain stable during device operation, as dynamic changes cause undefined burst behavior and potential data corruption. The pin is sampled at power-up and does not require latching logic.

How does the ZZ pin interact with clock enable (CEN) during low-power operation?

ZZ is an asynchronous active-HIGH sleep input that places the device in a low-current state while retaining memory contents; CEN is a synchronous active-LOW clock gate that pauses internal timing without entering sleep. When both are asserted, ZZ dominates - the device enters sleep regardless of CEN state. Exiting ZZ sleep requires deassertion followed by at least one valid CLK cycle before normal operation resumes.

Can CY7C1372KV33-167AXIT operate with VDDQ = 3.3 V instead of 2.5 V?

No - the CY7C1372KV33-167AXIT is specified only for VDDQ = 2.5 V ±0.2 V per datasheet Absolute Maximum Ratings and DC Characteristics. Operating VDDQ at 3.3 V exceeds the absolute maximum I/O voltage rating and risks permanent damage to output drivers and input receivers. The device requires a dedicated 2.5 V I/O rail.

Is JTAG boundary scan supported on CY7C1372KV33-167AXIT, and how is it enabled?

Yes - CY7C1372KV33-167AXIT implements IEEE 1149.1 JTAG boundary scan using TCK, TMS, TDI, and TDO pins. JTAG is always enabled at power-on; no configuration register or fuse setting is required. The TAP controller responds to standard JTAG instructions (SAMPLE/PRELOAD, EXTEST, INTEST, BYPASS) and supports full scan chain visibility of all I/O pins and internal registers.

CY7C1372KV33-167AXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1372KV33-167AXIT FAQ

1.How can I place an order for CY7C1372KV33-167AXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1372KV33-167AXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1372KV33-167AXIT reliable?

The price and inventory of CY7C1372KV33-167AXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372KV33-167AXIT is usually 5 days.

3.What payment methods are accepted for CY7C1372KV33-167AXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1372KV33-167AXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1372KV33-167AXIT?

CY7C1372KV33-167AXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1372KV33-167AXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1372KV33-167AXIT?

For technical support, including CY7C1372KV33-167AXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372KV33-167AXIT requirements.

6.How does Aetrix verify that CY7C1372KV33-167AXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1372KV33-167AXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372KV33-167AXIT meets industry standards.

7.What is the process for return or replacement of CY7C1372KV33-167AXIT?

All CY7C1372KV33-167AXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372KV33-167AXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1372KV33-167AXIT part is unused and in its original packaging.

Return procedure for CY7C1372KV33-167AXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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