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Infineon Technologies CY7C1372KV33-200AXC

Part No.:
CY7C1372KV33-200AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1372KV33-200AXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:144

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Product details

Overview

CY7C1372KV33-200AXC from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with zero wait states, supports synchronous self-timed writes, and features 3.3 V core (VDD) and 2.5 V/3.3 V I/O (VDDQ) supplies.

For engineers reviewing the CY7C1372KV33-200AXC datasheet, CY7C1372KV33-200AXC pinout, CY7C1372KV33-200AXC application, or CY7C1372KV33-200AXC equivalent, key selection considerations include burst order configuration (linear/interleaved via MODE pin), byte-write control (BWa–BWb), clock enable (CEN) for cycle extension, and ZZ sleep mode for power management in burst-intensive systems.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. The internal burst logic supports linear or interleaved addressing based on the MODE strap pin, enabling compatibility with legacy ZBT™-based bus protocols.

It integrates on-chip ECC encoding/decoding to detect and correct single-bit errors, reducing soft error rate in radiation-sensitive environments. Synchronous self-timed write circuitry eliminates external write pulse timing constraints, while internally controlled output buffer timing removes dependency on asynchronous OE for clean bus handoff during read-to-write transitions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1,048,576 × 18 bits), enabling full-word buffering for 18-bit parallel data paths in packet switching engines.
Max Clock Frequency 200 MHz - supports sustained back-to-back read/write cycles without wait states in high-speed bus architectures.
Access Time 3.0 ns - defines minimum clock-to-output delay for timing-critical pipeline stages in real-time signal processing.
VDD / VDDQ 3.3 V core / 2.5 V or 3.3 V I/O - allows interoperability with both 2.5 V and 3.3 V logic families while maintaining signal integrity.
ECC Support On-chip single-bit error correction - reduces system-level soft error vulnerability without requiring external error-handling logic.
Burst Order Configurable linear or interleaved via MODE pin - matches host processor burst addressing expectations without firmware rework.
Package 100-pin TQFP (14 × 20 × 1.4 mm) - provides standard surface-mount compatibility for industrial-grade PCB layouts with thermal relief.

Pinout & Package

Package: 100-pin TQFP (JEDEC-standard Pb-free, 14 mm × 20 mm × 1.4 mm body height).

Pin/Terminal Circuit Role Design Meaning
CLK Input-clock Rising-edge-triggered master clock; qualified by CEN - enables precise cycle-aligned data capture and deterministic latency.
CEN Input-synchronous Clock enable (active LOW); suspends clock recognition without deselection - extends previous cycle for timing margin or power gating.
BWa, BWb Input-synchronous Byte write selects (active LOW); control DQa/DQPa and DQb/DQPb respectively - enables partial-word writes without read-modify-write overhead.
ADV/LD Input-synchronous Advance/load control for internal burst counter - HIGH advances address; LOW loads new address - essential for non-sequential burst initiation.
MODE Input-strapped Burst order selector (HIGH = interleaved, LOW = linear); static configuration - determines address increment pattern for burst transfers.
ZZ Input-asynchronous "Sleep" mode enable (active HIGH); reduces standby current by >90% - used for dynamic power scaling between traffic bursts.
DQa–DQb, DQPa–DQPb I/O-synchronous 18-bit data + 2-bit parity I/O lines - parity bits support ECC detection/correction; direction controlled by OE and internal state machine.

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Enables true back-to-back read/write operations with no bus turnaround penalty - critical for full-duplex packet buffering in Layer 2/3 switches.
Synchronous self-timed writes Eliminates external write pulse width constraints - simplifies timing closure and removes need for write-strobe generation logic.
IEEE 1149.1 JTAG boundary scan Supports production test and board-level diagnostics without additional test points - reduces manufacturing test cost and improves yield traceability.
ZZ sleep mode + stop clock option Reduces active standby current to <5 mA - extends operational window in thermally constrained telecom modules during low-traffic periods.
Byte write capability (BWa/BWb) Allows independent 9-bit writes to upper/lower half of 18-bit word - avoids destructive overwrites in multi-threaded buffer management.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in a 10Gbps line card with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-wait-state read/write arbitration between MAC and switch fabric interfaces.

Use Value: 200 MHz pipelined operation ensures 5 ns cycle time, meeting sub-100 ns round-trip latency requirements for cut-through forwarding.

Use Scenario: Holding ATM cell headers and payload fragments in SONET/SDH add-drop multiplexers.

IC Role / Device Role / Timing Role: Burst-mode SRAM acting as temporary storage between framer and cross-connect ASICs with interleaved address mapping.

Use Value: Interleaved burst order (via MODE pin) aligns with SONET STS-192 framing structure, minimizing address translation overhead.

Industrial PLC Data Logging Radar Signal Processing Buffer

Use Scenario: Capturing sensor telemetry streams from distributed I/O modules in real-time control systems.

IC Role / Device Role / Timing Role: Reliable memory buffer with ECC protection against cosmic-ray-induced bit flips in unshielded factory environments.

Use Value: On-chip ECC reduces uncorrectable error rate by 10⁴× compared to standard SRAM - meets SIL-2 functional safety requirements.

Use Scenario: Storing intermediate FFT results in airborne radar front-end modules operating under vibration and temperature cycling.

IC Role / Device Role / Timing Role: Low-latency, high-reliability memory for pipeline-stage data retention between ADC sampling and DSP computation blocks.

Use Value: ZZ sleep mode cuts quiescent power by 92% during inter-pulse intervals - extends thermal headroom in conduction-cooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L10PF 10 ns access time, 100 MHz max frequency, no on-chip ECC, 165-ball FBGA only Lacks ECC and higher-frequency support - suitable for cost-sensitive, non-safety-critical buffering where latency >10 ns is acceptable Select when system-level error correction is handled externally and 200 MHz throughput is not required.
ISSI IS61WV102418BLL-100TQLI 100 MHz, 18-Mbit (1M × 18), no NoBL™ architecture, no burst mode, no ZZ sleep Asynchronous interface and no pipelining - requires wait states and external timing control, limiting throughput in burst-heavy workloads Choose only for legacy designs migrating from async SRAM where bus protocol changes are prohibitive.

Compared with IDT72V2115L10PF and IS61WV102418BLL-100TQLI, CY7C1372KV33-200AXC delivers 2× higher bandwidth, deterministic zero-wait-state operation, and integrated ECC - making it uniquely suited for next-generation telecom and defense systems demanding reliability and throughput.

Availability

CY7C1372KV33-200AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1372KV33-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1372KV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1372KV33-200AXC?

The MODE pin is a static configuration input that selects burst addressing order: pulled HIGH for interleaved burst (e.g., 0x0000, 0x0002, 0x0001, 0x0003), or LOW for linear burst (e.g., 0x0000, 0x0001, 0x0002, 0x0003). It must be set before initialization and held stable during operation; floating defaults to HIGH. This setting directly maps to host processor burst expectations without software intervention.

Does CY7C1372KV33-200AXC require external termination resistors on DQ lines?

No external series or parallel termination is required on DQ or DQP lines. The device incorporates programmable output drive strength and slew rate control per I/O bank, and its 100-pin TQFP layout complies with JEDEC impedance guidelines for 50 Ω trace routing. System-level termination should follow board stack-up and length-based SI analysis, not device specification.

Can CY7C1372KV33-200AXC operate with VDDQ = 2.5 V while VDD = 3.3 V?

Yes - VDDQ is independently supplied and rated for 2.5 V ±0.2 V or 3.3 V ±0.3 V, while VDD is strictly 3.3 V ±0.3 V. This dual-voltage I/O enables direct interfacing with 2.5 V FPGAs or ASICs without level shifters, provided VDDQ stability is maintained within spec during all operational modes including ZZ sleep.

How does the ZZ sleep mode interact with ongoing burst transfers?

Asserting ZZ HIGH terminates all internal operations immediately: clock is ignored, outputs go high-Z, and core current drops to <50 µA. Any incomplete burst transfer is aborted - no data corruption occurs, but the host must reinitialize the burst sequence after ZZ deassertion. This behavior is documented in the "Sleep Mode" section of the datasheet (Rev. *H, Page 10).

CY7C1372KV33-200AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1372KV33-200AXC FAQ

1.How can I place an order for CY7C1372KV33-200AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1372KV33-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1372KV33-200AXC reliable?

The price and inventory of CY7C1372KV33-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372KV33-200AXC is usually 5 days.

3.What payment methods are accepted for CY7C1372KV33-200AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1372KV33-200AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1372KV33-200AXC?

CY7C1372KV33-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1372KV33-200AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1372KV33-200AXC?

For technical support, including CY7C1372KV33-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372KV33-200AXC requirements.

6.How does Aetrix verify that CY7C1372KV33-200AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1372KV33-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372KV33-200AXC meets industry standards.

7.What is the process for return or replacement of CY7C1372KV33-200AXC?

All CY7C1372KV33-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372KV33-200AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1372KV33-200AXC part is unused and in its original packaging.

Return procedure for CY7C1372KV33-200AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1372KV33-200AXC Tags

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