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Infineon Technologies CY7C1372KVE33-167AXI

Part No.:
CY7C1372KVE33-167AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1372KVE33-167AXI.pdf
Description:
IC SRAM 18MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,509

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Product details

Overview

CY7C1372KVE33 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with 3.4 ns access time, supports synchronous self-timed writes, and uses 3.3 V core / 2.5 V I/O supplies in a 100-pin TQFP package.

For engineers reviewing the CY7C1372KVE33 datasheet, CY7C1372KVE33 pinout, CY7C1372KVE33 application, or CY7C1372KVE33 equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select mapping (BWa–BWb), ZZ sleep mode timing, and ECC-enabled soft error resilience in mission-critical data paths.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and outputs are driven through output registers synchronized to the same clock edge. The internal burst logic supports both linear and interleaved address sequences controlled by the MODE strap pin.

It integrates synchronous self-timed write circuitry, eliminating external write pulse timing constraints, and features IEEE 1149.1 JTAG boundary scan for testability. The ECC encoder/decoder corrects single-bit errors and detects double-bit errors across the 18-bit data + 2-bit parity bus, reducing SER in radiation-prone environments.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1,048,576 × 18 bits), enabling full-line buffering for 10G Ethernet frame payloads
Max Clock Frequency 167 MHz - supports sustained back-to-back read/write cycles without wait states in FPGA-attached control planes
Access Time 3.4 ns - defines minimum clock-to-output delay for timing closure in 6 ns cycle designs
VDD / VDDQ 3.3 V core / 2.5 V I/O - allows direct interfacing with 2.5 V FPGA I/O banks while maintaining robust noise margin
ECC Support On-chip SEC-DED - corrects single-bit errors and detects double-bit errors in real time without CPU intervention
Burst Mode Configurable linear or interleaved via MODE pin - matches legacy ZBT or modern DDR-aligned memory controller addressing
Power Dissipation 143 mA typical operating current - enables thermal management in dense multi-SRAM modules without forced air

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit synchronous address bus sampled on rising CLK edge; selects one of 1M locations
BWa, BWb Byte Write Select Active-low synchronous controls write enable for DQa/DQPa and DQb/DQPb groups respectively
CLK Clock Input Rising-edge-triggered master clock; qualified by CEN - no operation occurs when CEN is HIGH
CEN Clock Enable Asynchronous low-active gate for CLK; suspends operation without deselecting device or losing state
ZZ Sleep Control Asynchronous high-active entry into low-power sleep mode; reduces standby current to < 50 µA
MODE Burst Configuration Strap pin setting burst order: HIGH = interleaved, LOW = linear; must be stable before initialization
DQa–DQb, DQPa–DQPb Data I/O 18-bit data + 2-bit parity bus; direction controlled by OE and internal write/read state machine
CE1, CE2, CE3 Chip Enable Three-level synchronous chip select (active LOW/HIGH/LOW) for bank decoding in multi-SRAM systems

Key Features

Feature Design Value
No Bus Latency™ Architecture Enables true back-to-back read/write transitions with zero wait states - eliminates pipeline stalls in burst-intensive traffic shaping
Synchronous Self-Timed Writes Removes external write pulse timing dependency - simplifies FPGA logic design and improves timing margin
On-Chip ECC (SEC-DED) Reduces uncorrectable error rate by >100× in telecom base station control memory exposed to cosmic radiation
Flexible Burst Ordering Hardware-selectable linear or interleaved burst via MODE pin - supports both legacy ZBT and modern controller requirements
Low-Power ZZ Sleep Mode Reduces active current by >95% during idle periods in packet buffer applications with variable traffic load

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced directly to FPGA-based traffic managers.

Use Value: 167 MHz pipelined operation ensures sub-6 ns cycle time for 10 Gbps line-rate processing without external wait-state insertion.

Use Scenario: Holding configuration tables and real-time statistics in OC-192 SONET/SDH line interface cards.

IC Role / Device Role / Timing Role: ECC-protected working memory for embedded RISC processors managing framer and mapper functions.

Use Value: On-chip SEC-DED correction prevents silent data corruption in multi-year deployments under neutron flux exposure.

FPGA-Based Protocol Acceleration Military/Aerospace Data Logging

Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection tasks using tightly coupled FPGA+SRAM subsystems.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory co-located with programmable logic for deterministic processing pipelines.

Use Value: Fully registered I/O and clock-enable suspension allow precise synchronization with FPGA fabric clock domains.

Use Scenario: Capturing high-fidelity sensor telemetry in airborne avionics systems where radiation-induced bit flips are unacceptable.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design memory buffer with guaranteed SER reduction per MIL-STD-883 TM1019.

Use Value: ZZ sleep mode and 2.5 V I/O reduce power and EMI in constrained SWaP-C platforms without sacrificing reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L16PF 16-Mbit (512K × 32), 167 MHz, no on-chip ECC, 3.3 V only (no VDDQ separation) Lacks ECC and dual-voltage I/O - suitable for cost-sensitive non-safety-critical buffers Select when ECC is not required and system uses uniform 3.3 V I/O voltage
ISSI IS61WV102418BLL-167TQLI 18-Mbit (1M × 18), 167 MHz, no ECC, 3.3 V core/I/O, supports linear burst only Missing MODE pin and interleaved burst - limits compatibility with ZBT-style controllers Select for simplified layout where burst order is fixed and ECC is handled externally

Compared with IDT72V2115L16PF and IS61WV102418BLL-167TQLI, CY7C1372KVE33 uniquely delivers integrated ECC, dual-voltage I/O, and hardware-configurable burst ordering - critical for telecom and aerospace applications requiring concurrent reliability, flexibility, and timing precision.

Availability

CY7C1372KVE33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA-based protocol acceleration, and military/aerospace data logging requiring stable component supply across extended product lifecycles.

Supply support for CY7C1372KVE33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1372KVE33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput memory subsystems in networking infrastructure and real-time embedded systems.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin is a static strap input that selects burst address sequence: HIGH enables interleaved burst order, LOW enables linear burst order. It must be held stable before device initialization and cannot change during operation. Floating defaults to HIGH (interleaved). This pin directly configures the internal burst counter logic and affects compatibility with memory controllers expecting specific address progression patterns.

How does the ZZ sleep mode interact with the CEN signal?

ZZ is asynchronous and high-active, forcing immediate entry into ultra-low-power sleep regardless of clock state; CEN is synchronous and low-active, merely masking CLK while preserving internal register state. When ZZ is asserted, the device enters sleep even if CEN is LOW - CEN has no effect during ZZ activation. Exiting ZZ requires deassertion followed by valid CLK/CEN sequence to resume operation.

Can BWa and BWb be used independently to write to different byte lanes in a single cycle?

Yes - BWa and BWb are independent, synchronous, active-low signals controlling write enables for DQa/DQPa and DQb/DQPb groups respectively. When WE is asserted, each BWx pin gates its associated 9-bit data lane, allowing partial 9-bit writes within the 18-bit word. This enables efficient updates of header fields or metadata without overwriting entire payload words.

Is the ECC functionality optional or always active?

ECC is hardwired and always active - there is no disable control. The 18-bit data bus plus 2-bit parity (DQPa/DQPb) are internally encoded/decoded on every read and write. Parity bits are stored alongside data and protected by the same ECC logic; no software or configuration is needed to enable correction - it operates transparently in hardware.

CY7C1372KVE33-167AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1372KVE33-167AXI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1372KVE33-167AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1372KVE33-167AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1372KVE33-167AXI is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1372KVE33-167AXI?

For technical support, including CY7C1372KVE33-167AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1372KVE33-167AXI requirements.

6.How does Aetrix verify that CY7C1372KVE33-167AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1372KVE33-167AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1372KVE33-167AXI meets industry standards.

7.What is the process for return or replacement of CY7C1372KVE33-167AXI?

All CY7C1372KVE33-167AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1372KVE33-167AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1372KVE33-167AXI part is unused and in its original packaging.

Return procedure for CY7C1372KVE33-167AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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