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Infineon Technologies CY7C1373KV33-133AXI

Part No.:
CY7C1373KV33-133AXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1373KV33-133AXI.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,869

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Product details

Overview

CY7C1373KV33 from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with NoBL™ architecture and on-chip ECC, configured as 512K × 36 or 1M × 18. It supports true back-to-back read/write operations at 133 MHz with zero wait states, 6.5 ns clock-to-output delay, and 3.3 V/2.5 V I/O (VDDQ). Used in high-throughput packet buffering and network switching ASIC interfaces.

For engineers reviewing the CY7C1373KV33 datasheet, CY7C1373KV33 pinout, CY7C1373KV33 application, or CY7C1373KV33 equivalent, key selection criteria include burst order control (linear/interleaved), synchronous byte write capability, ZZ sleep mode, three chip enables for depth expansion, and ECC-enabled soft error mitigation in mission-critical memory paths.

Technical Context

The device implements a synchronous, clocked interface with registered inputs sampled on the rising edge of CLK, qualified by CEN. All writes are self-timed and controlled by WE and four byte-write signals (BWA–BWD), enabling granular 8-bit data updates without bus turnaround overhead.

Burst addressing is managed internally via a two-bit counter driven by A[1:0] and ADV/LD, supporting both linear and interleaved sequences selected by the MODE strap pin. Output drivers are synchronously tristated during write data cycles, eliminating external bus contention management.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 or 1M × 18 configuration)
Max Clock Frequency133 MHz - enables continuous data transfer on every clock cycle with no dead cycles
Access Time6.5 ns - defines minimum clock-to-output delay for timing-critical read paths
VDDQ Supply Range2.5 V / 3.3 V - supports mixed-voltage system interfacing and I/O level translation
ECC SupportOn-chip encoder/decoder - corrects single-bit errors and detects double-bit errors to reduce SER
Burst OrderSelectable via MODE pin - linear or interleaved addressing for cache-line or DMA alignment
Sleep ModeZZ input (asynchronous, active HIGH) - reduces standby power while preserving data integrity

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
CLK, CENMaster clock and enableQualifies all synchronous inputs; CEN masks CLK without deselecting device, enabling cycle extension
CE1, CE2, CE3Chip select logicThree independent enables (CE1/CE3 active LOW, CE2 active HIGH) allow flexible bank decoding and depth expansion
BWA–BWDByte write controlFour active-LOW signals enable independent 8-bit writes to DQ[31:0] and DQP[A:D], critical for partial-word updates
ADV/LDBurst address controlAdvances internal counter when HIGH; loads new address when LOW - essential for burst sequence initiation
MODEBurst order selectorStrap pin (GND = linear, VDD = interleaved) - determines address increment pattern for burst reads/writes
ZZAsynchronous sleepActive-HIGH entry into low-power state with data retention - no timing constraints on assertion/deassertion

Key Features

FeatureDesign Value
No Bus Latency (NoBL™) architectureEliminates dead cycles between consecutive read/write operations, enabling 100% bus utilization at 133 MHz
Synchronous self-timed writesRemoves external write pulse timing constraints - internal logic completes write within one clock cycle
On-chip ECC (Error Correction Code)Corrects single-bit errors and detects double-bit errors in real time, reducing uncorrectable error rate in radiation-prone environments
Registered inputs with clock qualificationAll address, control, and data inputs pass through flip-flops clocked by CLK/CEN, ensuring deterministic setup/hold timing across temperature/voltage
Automatic output tristatingI/O pins are synchronously forced to high-impedance during write data phases, preventing bus contention without external logic

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing variable-length Ethernet frames in ingress/egress queues of multi-gigabit switches.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced directly to MAC and switch fabric controllers.

Use Value: NoBL™ architecture sustains 133 MHz back-to-back read/write throughput, minimizing frame drop under bursty traffic loads.

Use Scenario: Holding voice channel samples and signaling data in carrier-grade DSLAM and OLT line cards.

IC Role / Device Role / Timing Role: Synchronous dual-port buffer between DSP subsystems and serial framer ICs operating at OC-3/OC-12 rates.

Use Value: 6.5 ns access time and burst capability align precisely with TDM slot timing, eliminating pipeline stalls.

Radar Signal Processing BufferIndustrial PLC Data Logging

Use Scenario: Capturing high-speed ADC samples from phased-array radar receivers before FFT processing.

IC Role / Device Role / Timing Role: Real-time circular buffer with ECC protection for raw IQ data streams at >100 MB/s sustained rate.

Use Value: On-chip ECC mitigates neutron-induced bit flips in airborne systems, meeting DO-254 DAL-B requirements.

Use Scenario: Temporarily storing sensor fusion outputs and motion control commands in safety-rated programmable logic controllers.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic executive tasks with guaranteed worst-case latency.

Use Value: ZZ sleep mode reduces idle power by >90% during scan intervals, extending thermal margin in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C33128P-133JCINNo on-chip ECC; 133 MHz max, 16-Mbit (512K × 32); 3.3 V only VDDQLacks soft-error resilience; requires external ECC logic for mission-critical useSelect when cost sensitivity outweighs SER requirements and bus width matches 32-bit systems
IS61WV102432BLL-133TQLI1024K × 32 configuration; no MODE pin for burst order; supports 2.5 V VDDQ onlyFixed interleaved burst; no linear option - limits compatibility with legacy cache controllersChoose for designs requiring identical pinout to older ISSI devices and accepting fixed burst behavior

Compared with AS7C33128P-133JCIN and IS61WV102432BLL-133TQLI, CY7C1373KV33 uniquely combines ECC, selectable burst order, and dual-voltage VDDQ in a 100-pin TQFP - making it optimal for new designs where data integrity and interface flexibility are non-negotiable.

Availability

CY7C1373KV33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1373KV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, back-to-back memory access in bandwidth-constrained ASIC/FPGA interconnects and real-time signal processing subsystems.

FAQ

What is the function of the MODE pin on CY7C1373KV33?

The MODE pin is a static strap input that selects burst addressing order: tied to GND for linear burst (sequential address increment), or to VDD/floating for interleaved burst (bit-reversed increment). It is sampled only at power-up or reset, not dynamically during operation, and requires no external driver circuitry beyond pull-up/down resistors.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is asserted HIGH, the device enters a non-time-critical sleep state with data retention; core clocks halt and I/O drivers enter high-impedance. Power drops to ≤5 mA typical. No timing specifications apply during sleep, and recovery to active operation requires only one valid CLK cycle after ZZ returns LOW - no reset or initialization sequence needed.

Can CY7C1373KV33 operate with mixed VDD (3.3 V) and VDDQ (2.5 V) supplies?

Yes - VDD must be 3.3 V ±10% for core logic, while VDDQ may be independently set to either 2.5 V ±10% or 3.3 V ±10% to match interfacing ASIC/FPGA I/O voltage. This allows seamless integration into mixed-voltage systems without level shifters, provided VDDQ does not exceed VDD.

Is the ECC functionality configurable or always enabled?

ECC is hardwired and always active - there is no disable control. The SRAM automatically encodes parity bits on every write and decodes/corrects on every read. Single-bit errors are transparently corrected in hardware; double-bit errors trigger a detectable flag condition on DQP lines, allowing host software to initiate recovery actions.

CY7C1373KV33-133AXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1373KV33-133AXI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1373KV33-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1373KV33-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1373KV33-133AXI is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1373KV33-133AXI?

For technical support, including CY7C1373KV33-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1373KV33-133AXI requirements.

6.How does Aetrix verify that CY7C1373KV33-133AXI is sourced from the original manufacturer or authorized distributors?

All CY7C1373KV33-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1373KV33-133AXI meets industry standards.

7.What is the process for return or replacement of CY7C1373KV33-133AXI?

All CY7C1373KV33-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1373KV33-133AXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1373KV33-133AXI part is unused and in its original packaging.

Return procedure for CY7C1373KV33-133AXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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