Infineon Technologies CY7C1373KV33-133AXI
- Part No.:
- CY7C1373KV33-133AXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1373KV33-133AXI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1373KV33 from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with NoBL™ architecture and on-chip ECC, configured as 512K × 36 or 1M × 18. It supports true back-to-back read/write operations at 133 MHz with zero wait states, 6.5 ns clock-to-output delay, and 3.3 V/2.5 V I/O (VDDQ). Used in high-throughput packet buffering and network switching ASIC interfaces.
For engineers reviewing the CY7C1373KV33 datasheet, CY7C1373KV33 pinout, CY7C1373KV33 application, or CY7C1373KV33 equivalent, key selection criteria include burst order control (linear/interleaved), synchronous byte write capability, ZZ sleep mode, three chip enables for depth expansion, and ECC-enabled soft error mitigation in mission-critical memory paths.
Technical Context
The device implements a synchronous, clocked interface with registered inputs sampled on the rising edge of CLK, qualified by CEN. All writes are self-timed and controlled by WE and four byte-write signals (BWA–BWD), enabling granular 8-bit data updates without bus turnaround overhead.
Burst addressing is managed internally via a two-bit counter driven by A[1:0] and ADV/LD, supporting both linear and interleaved sequences selected by the MODE strap pin. Output drivers are synchronously tristated during write data cycles, eliminating external bus contention management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 or 1M × 18 configuration) |
| Max Clock Frequency | 133 MHz - enables continuous data transfer on every clock cycle with no dead cycles |
| Access Time | 6.5 ns - defines minimum clock-to-output delay for timing-critical read paths |
| VDDQ Supply Range | 2.5 V / 3.3 V - supports mixed-voltage system interfacing and I/O level translation |
| ECC Support | On-chip encoder/decoder - corrects single-bit errors and detects double-bit errors to reduce SER |
| Burst Order | Selectable via MODE pin - linear or interleaved addressing for cache-line or DMA alignment |
| Sleep Mode | ZZ input (asynchronous, active HIGH) - reduces standby power while preserving data integrity |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, JEDEC-standard Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK, CEN | Master clock and enable | Qualifies all synchronous inputs; CEN masks CLK without deselecting device, enabling cycle extension |
| CE1, CE2, CE3 | Chip select logic | Three independent enables (CE1/CE3 active LOW, CE2 active HIGH) allow flexible bank decoding and depth expansion |
| BWA–BWD | Byte write control | Four active-LOW signals enable independent 8-bit writes to DQ[31:0] and DQP[A:D], critical for partial-word updates |
| ADV/LD | Burst address control | Advances internal counter when HIGH; loads new address when LOW - essential for burst sequence initiation |
| MODE | Burst order selector | Strap pin (GND = linear, VDD = interleaved) - determines address increment pattern for burst reads/writes |
| ZZ | Asynchronous sleep | Active-HIGH entry into low-power state with data retention - no timing constraints on assertion/deassertion |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency (NoBL™) architecture | Eliminates dead cycles between consecutive read/write operations, enabling 100% bus utilization at 133 MHz |
| Synchronous self-timed writes | Removes external write pulse timing constraints - internal logic completes write within one clock cycle |
| On-chip ECC (Error Correction Code) | Corrects single-bit errors and detects double-bit errors in real time, reducing uncorrectable error rate in radiation-prone environments |
| Registered inputs with clock qualification | All address, control, and data inputs pass through flip-flops clocked by CLK/CEN, ensuring deterministic setup/hold timing across temperature/voltage |
| Automatic output tristating | I/O pins are synchronously forced to high-impedance during write data phases, preventing bus contention without external logic |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing variable-length Ethernet frames in ingress/egress queues of multi-gigabit switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced directly to MAC and switch fabric controllers. Use Value: NoBL™ architecture sustains 133 MHz back-to-back read/write throughput, minimizing frame drop under bursty traffic loads. | Use Scenario: Holding voice channel samples and signaling data in carrier-grade DSLAM and OLT line cards. IC Role / Device Role / Timing Role: Synchronous dual-port buffer between DSP subsystems and serial framer ICs operating at OC-3/OC-12 rates. Use Value: 6.5 ns access time and burst capability align precisely with TDM slot timing, eliminating pipeline stalls. |
| Radar Signal Processing Buffer | Industrial PLC Data Logging |
Use Scenario: Capturing high-speed ADC samples from phased-array radar receivers before FFT processing. IC Role / Device Role / Timing Role: Real-time circular buffer with ECC protection for raw IQ data streams at >100 MB/s sustained rate. Use Value: On-chip ECC mitigates neutron-induced bit flips in airborne systems, meeting DO-254 DAL-B requirements. | Use Scenario: Temporarily storing sensor fusion outputs and motion control commands in safety-rated programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic executive tasks with guaranteed worst-case latency. Use Value: ZZ sleep mode reduces idle power by >90% during scan intervals, extending thermal margin in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C33128P-133JCIN | No on-chip ECC; 133 MHz max, 16-Mbit (512K × 32); 3.3 V only VDDQ | Lacks soft-error resilience; requires external ECC logic for mission-critical use | Select when cost sensitivity outweighs SER requirements and bus width matches 32-bit systems |
| IS61WV102432BLL-133TQLI | 1024K × 32 configuration; no MODE pin for burst order; supports 2.5 V VDDQ only | Fixed interleaved burst; no linear option - limits compatibility with legacy cache controllers | Choose for designs requiring identical pinout to older ISSI devices and accepting fixed burst behavior |
Compared with AS7C33128P-133JCIN and IS61WV102432BLL-133TQLI, CY7C1373KV33 uniquely combines ECC, selectable burst order, and dual-voltage VDDQ in a 100-pin TQFP - making it optimal for new designs where data integrity and interface flexibility are non-negotiable.
Availability
CY7C1373KV33 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C1373KV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.
This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, back-to-back memory access in bandwidth-constrained ASIC/FPGA interconnects and real-time signal processing subsystems.
FAQ
What is the function of the MODE pin on CY7C1373KV33?
The MODE pin is a static strap input that selects burst addressing order: tied to GND for linear burst (sequential address increment), or to VDD/floating for interleaved burst (bit-reversed increment). It is sampled only at power-up or reset, not dynamically during operation, and requires no external driver circuitry beyond pull-up/down resistors.
How does the ZZ sleep mode affect timing and power consumption?
When ZZ is asserted HIGH, the device enters a non-time-critical sleep state with data retention; core clocks halt and I/O drivers enter high-impedance. Power drops to ≤5 mA typical. No timing specifications apply during sleep, and recovery to active operation requires only one valid CLK cycle after ZZ returns LOW - no reset or initialization sequence needed.
Can CY7C1373KV33 operate with mixed VDD (3.3 V) and VDDQ (2.5 V) supplies?
Yes - VDD must be 3.3 V ±10% for core logic, while VDDQ may be independently set to either 2.5 V ±10% or 3.3 V ±10% to match interfacing ASIC/FPGA I/O voltage. This allows seamless integration into mixed-voltage systems without level shifters, provided VDDQ does not exceed VDD.
Is the ECC functionality configurable or always enabled?
ECC is hardwired and always active - there is no disable control. The SRAM automatically encodes parity bits on every write and decodes/corrects on every read. Single-bit errors are transparently corrected in hardware; double-bit errors trigger a detectable flag condition on DQP lines, allowing host software to initiate recovery actions.
CY7C1373KV33-133AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1373KV33-133AXI FAQ
1.How can I place an order for CY7C1373KV33-133AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1373KV33-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1373KV33-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1373KV33-133AXI is usually 5 days.
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6.How does Aetrix verify that CY7C1373KV33-133AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1373KV33-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1373KV33-133AXI meets industry standards.
7.What is the process for return or replacement of CY7C1373KV33-133AXI?
All CY7C1373KV33-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1373KV33-133AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1373KV33-133AXI part is unused and in its original packaging.
Return procedure for CY7C1373KV33-133AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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