Infineon Technologies CY7C1380KV33-167AXC
- Part No.:
- CY7C1380KV33-167AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1380KV33-167AXC.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:194
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Product details
Overview
CY7C1380KV33-167AXC from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, operating at 167 MHz (tCO = 3.4 ns), supporting 3.3 V core and 2.5/3.3 V I/O supplies, and featuring registered inputs/outputs for high-speed burst-mode cache interfacing in network processors and telecom line cards.
For engineers reviewing the CY7C1380KV33-167AXC datasheet, CY7C1380KV33-167AXC pinout, CY7C1380KV33-167AXC application, or CY7C1380KV33-167AXC equivalent, key selection considerations include synchronous burst timing (linear/interleaved), byte-write granularity (BWA–BWD + BWE), three-chip-enable depth expansion, JTAG boundary scan support, and TQFP-100 package compatibility with JEDEC-standard I/O levels.
Technical Context
This SRAM implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC strobes to generate internal sequential addresses during pipelined read/write cycles. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, enabling deterministic 3-1-1-1 access timing.
The device supports dual-burst modes selected via the static MODE pin (interleaved or linear), asynchronous OE for output tri-state control, and ZZ sleep mode with data retention. Write operations are self-timed and qualified by BWE + BWX signals or overridden by active-low GW for full-word writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst throughput in synchronous systems |
| Access Time (tCO) | 3.4 ns - clock-to-output delay for first valid data in pipelined read cycle |
| Core Supply Voltage | 3.3 V ± 0.3 V - powers memory array and internal logic; not tolerant of 2.5 V core |
| I/O Supply Voltage | 2.5 V or 3.3 V - selectable VDDQ enables interface compatibility with mixed-voltage SoCs |
| Burst Access Pattern | Linear or interleaved - selected statically via MODE pin; determines address increment sequence |
| Write Control Scheme | Synchronous self-timed with BWE + BWX (byte-select) or GW (global write) - eliminates external write pulse timing constraints |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC standard, with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master clock for all synchronous registers and burst counter |
| ADSP / ADSC | Address strobe inputs | Asynchronous-selectable strobes (processor vs. controller) that latch A[1:0] and load burst counter |
| ADV | Burst advance | Active-low signal that increments internal burst counter on next CLK edge |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous enable hierarchy (CE1 active-low, CE2 active-high, CE3 active-low) for bank expansion |
| BWA–BWD, BWE, GW | Byte write controls | Four independent byte masks + enable + global override for flexible word/byte write granularity |
| OE | Output enable | Asynchronous, active-low control of I/O direction - enables tri-state during deselected or write cycles |
| ZZ | Sleep mode | Asynchronous, active-high entry into low-power retention mode with no timing constraints |
| MODE | Burst order select | Static strap pin (pull-up internal) setting linear vs. interleaved burst addressing sequence |
| DQs / DQPA–D | Data I/O | 36-bit bidirectional data bus with parity bits (DQPA–D); direction controlled by OE |
| VDD, VSS, VDDQ, VSSQ | Power/Ground | Separate core (3.3 V) and I/O (2.5/3.3 V) supply domains with dedicated grounds |
Key Features
| Feature | Design Value |
|---|---|
| 3-1-1-1 burst access rate | Enables continuous 167 MHz data streaming after initial 3-cycle latency - optimized for L2 cache fill bursts |
| Synchronous self-timed write | Eliminates need for external write-pulse generation; write duration determined internally per access |
| IEEE 1149.1 JTAG boundary scan | Supports board-level interconnect test without requiring functional access to memory array |
| Separate processor/controller address strobes | Allows coexistence of CPU and DMA controller on same bus without arbitration logic |
| Configurable burst order (linear/interleaved) | Matches native burst behavior of Intel x86 (linear) or PowerPC/MIPS (interleaved) processors |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to packet parser and scheduler logic. Use Value: 3.4 ns tCO and 3-1-1-1 burst rate ensure sub-10 ns average frame header access time across 4-byte aligned reads. | Use Scenario: Serving as instruction/data cache for DSP-based TDM framer modules in carrier-grade optical transport equipment. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic access to firmware and real-time packet metadata. Use Value: Dual VDDQ support allows direct interfacing with both 2.5 V DSP cores and 3.3 V PHY interfaces without level shifters. |
| High-Speed Test Equipment Memory | Industrial PLC Motion Control Buffer |
Use Scenario: Capturing high-resolution analog waveform samples at >100 MS/s in automated test systems with FPGA-based acquisition engines. IC Role / Device Role / Timing Role: Burst-capable SRAM acting as deep sample FIFO between ADC interface and PCIe host transfer logic. Use Value: Registered inputs/outputs eliminate setup/hold violations at 167 MHz, enabling reliable capture without custom timing closure. | Use Scenario: Holding real-time position/velocity profiles and servo loop coefficients in multi-axis CNC controllers with deterministic jitter requirements. IC Role / Device Role / Timing Role: Deterministic-access memory backing motion trajectory generator and PID coefficient tables. Use Value: ZZ sleep mode reduces idle power to <5 mW while preserving profile data - critical for fanless industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L16PF | 16-Mbit (512K × 32), 167 MHz, 3.3 V only I/O, no ZZ sleep, no JTAG | Lacks sleep mode and boundary scan; narrower data bus (32-bit vs. 36-bit + parity) | Select when parity is unnecessary and testability is handled externally |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), 133 MHz, 3.3 V core/I/O, no burst counter, asynchronous OE only | Lower speed, no internal burst addressing; requires external address sequencing logic | Select when system clock <133 MHz and burst control is implemented in FPGA/ASIC |
Compared with IDT72V2115L16PF and IS61WV102436B, CY7C1380KV33-167AXC uniquely delivers 36-bit width with parity, integrated burst counter, JTAG testability, and low-power ZZ mode - making it optimal for high-reliability, high-throughput embedded cache designs where deterministic timing and debug visibility are mandatory.
Availability
CY7C1380KV33-167AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, high-speed test equipment memory, and industrial PLC motion control buffer applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1380KV33-167AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
The CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented cache and buffer applications in networking and telecom infrastructure where deterministic timing and JEDEC-compliant I/O interoperability are critical.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst address sequence: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin with internal pull-up; configuration must be fixed at power-on and cannot change during operation. Incorrect MODE state causes invalid burst address generation and data corruption.
Can CY7C1380KV33-167AXC operate with 2.5 V core voltage?
No. The device requires a 3.3 V ± 0.3 V core supply (VDD) for proper memory array and logic operation. Only the I/O domain (VDDQ) supports 2.5 V or 3.3 V. Applying 2.5 V to VDD will result in functional failure and potential data loss.
How does the ZZ sleep mode affect timing and power consumption?
When ZZ is driven HIGH, the device enters non-time-critical sleep with data retention; core current drops to ≤5 mA (typical), and all outputs go high-impedance. No clock or timing constraints apply during sleep. Exit to active mode requires ZZ LOW followed by one valid CLK cycle before new accesses.
Is JTAG boundary scan available in the TQFP package?
No. JTAG pins (TCK, TMS, TDI, TDO) are only present in the 165-ball FBGA package. The 100-pin TQFP variant (like CY7C1380KV33-167AXC) omits these pins entirely; boundary scan functionality is unavailable in this package option.
CY7C1380KV33-167AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1380KV33-167AXC FAQ
1.How can I place an order for CY7C1380KV33-167AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1380KV33-167AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1380KV33-167AXC reliable?
The price and inventory of CY7C1380KV33-167AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1380KV33-167AXC is usually 5 days.
3.What payment methods are accepted for CY7C1380KV33-167AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1380KV33-167AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1380KV33-167AXC?
CY7C1380KV33-167AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1380KV33-167AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1380KV33-167AXC?
For technical support, including CY7C1380KV33-167AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1380KV33-167AXC requirements.
6.How does Aetrix verify that CY7C1380KV33-167AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1380KV33-167AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1380KV33-167AXC meets industry standards.
7.What is the process for return or replacement of CY7C1380KV33-167AXC?
All CY7C1380KV33-167AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1380KV33-167AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1380KV33-167AXC part is unused and in its original packaging.
Return procedure for CY7C1380KV33-167AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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