Infineon Technologies CY7C1380KV33-167AXIT
- Part No.:
- CY7C1380KV33-167AXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1380KV33-167AXIT.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1380KV33-167AXIT from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, operating at 167 MHz (tCO = 3.4 ns), supporting 3.3 V core and 2.5/3.3 V I/O supplies, and featuring registered address/data paths, synchronous self-timed write, and JTAG boundary scan - deployed in high-speed CPU cache subsystems requiring deterministic burst access.
For engineers reviewing the CY7C1380KV33-167AXIT datasheet, CY7C1380KV33-167AXIT pinout, CY7C1380KV33-167AXIT application, or CY7C1380KV33-167AXIT equivalent, key selection criteria include pipelined clock-to-output timing, dual-burst mode (linear/interleaved), byte-write granularity (BWA–BWD + BWE), three-chip-enable architecture for memory banking, and TQFP-100 package compatibility with JEDEC-compliant signal integrity.
Technical Context
This SRAM implements a two-bit synchronous burst counter controlled by ADV, ADSP, and ADSC inputs to generate sequential addresses during linear or interleaved bursts. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, enabling precise timing alignment in high-frequency bus interfaces.
The device supports four-byte-wide synchronous writes qualified by BWE and individual byte-select lines (BWA–BWD), plus global write (GW) that overrides byte enables. Output enable (OE) operates asynchronously to tri-state DQ/DQP pins, while ZZ provides asynchronous sleep mode with data retention and internal pull-down.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst throughput in synchronous systems |
| Access Time (tCO) | 3.4 ns - guaranteed clock-to-output delay for timing-critical read cycles |
| Core Supply Voltage | 3.3 V ± 0.3 V - powers internal logic and memory array; requires dedicated regulation |
| I/O Supply Voltage | 2.5 V or 3.3 V - selectable interface voltage matching host processor I/O domain |
| Burst Mode Control | MODE pin strapping - selects linear vs. interleaved address sequencing for cache line alignment |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testability on PCBs with TAP signals (TCK/TMS/TDI/TDO) |
Pinout & Package
Package: 100-pin JEDEC-standard Pb-free TQFP (14 × 20 × 1.4 mm), RoHS-compliant, with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Positive-edge-triggered master timing reference for all registered inputs/outputs |
| ADSP / ADSC | Address strobe inputs | Asynchronous initiation of address capture; ADSP takes priority when both asserted |
| ADV | Burst advance control | Triggers internal two-bit counter to increment address during burst sequences |
| BWA–BWD, BWE, GW | Byte write controls | Enable selective 1–4 byte writes; GW forces full-word write regardless of BWX states |
| CE1, CE2, CE3 | Chip enable hierarchy | Three-level synchronous enable: CE1 (active LOW), CE2 (active HIGH), CE3 (active LOW) |
| OE | Asynchronous output enable | Tri-states DQ/DQP pins immediately; masked only during first read cycle after deselect |
| ZZ | Asynchronous sleep control | Active HIGH entry into low-power mode with data retention; internal pull-down |
| MODE | Burst sequence selector | Static strap pin: GND = linear, VDD/floating = interleaved; must remain stable during operation |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined synchronous interface | Registers all address/data/control inputs on CLK rising edge - eliminates setup/hold violations in >133 MHz buses |
| 3-1-1-1 burst access rate | Delivers three consecutive words in first four clocks - optimized for Pentium-class CPU secondary cache latency |
| Configurable burst order | Linear or interleaved via MODE pin - matches processor-specific cache line fetch patterns without firmware overhead |
| Synchronous self-timed write | On-chip write timing generator - removes external write pulse generation and simplifies controller logic |
| JEDEC-compliant I/O | VDDQ-selectable 2.5 V/3.3 V interface - interoperable with legacy and modern microprocessor I/O standards |
Applications
| High-Performance CPU Cache | Network Packet Buffer |
|---|---|
Use Scenario: Secondary cache for x86-compatible processors running at ≥133 MHz bus speeds. IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic 3.4 ns tCO reads and burst-aligned writes to reduce CPU wait states. Use Value: Enables 167 MHz burst transfers matching Pentium II/III front-side bus timing without glue logic. | Use Scenario: Temporary storage for variable-length Ethernet frames in Layer 2 switches. IC Role / Device Role / Timing Role: High-bandwidth buffer interfacing with MAC controllers using ADSP/ADV burst protocol. Use Value: Supports concurrent read/write via separate CE1/CE2 banks and asynchronous OE for flow-controlled data handoff. |
| Industrial Motion Controller Memory | Avionics Data Acquisition Buffer |
Use Scenario: Real-time position lookup table storage in servo drive FPGA-based motion engines. IC Role / Device Role / Timing Role: Deterministic-access memory mapped to FPGA Avalon-MM or AXI interface with pipelined handshake. Use Value: Registered inputs eliminate timing closure issues across 100+ mm PCB traces between FPGA and SRAM. | Use Scenario: Buffered sensor sampling in DO-254-certified flight data recorders with radiation-hardened requirements. IC Role / Device Role / Timing Role: Radiation-tolerant burst memory with ZZ sleep mode for power-gated standby intervals. Use Value: Maintains data integrity during 100 ms power interruptions via ZZ-mode retention and VDD/VDDQ decoupling margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102432BLL-167BLI | 1024K × 32 organization, 3.3 V only I/O, no JTAG, tCO = 3.5 ns | Lacks burst mode selection (fixed linear), no ZZ sleep, fewer chip enables (CE1/CE2 only) | Choose for cost-sensitive designs where interleaved burst and sleep mode are unnecessary |
| MT55LSD256H36P-167:G | 256M × 36 QDR-II+ architecture, differential CLK, 1.8 V core, tCO = 0.45 ns | Requires differential clocking, higher bandwidth but incompatible control protocol (no ADSP/ADV) | Choose only when migrating to QDR-II+ infrastructure with FPGA or ASIC controller redesign |
Compared with IS61WV102432BLL-167BLI and MT55LSD256H36P-167:G, the CY7C1380KV33-167AXIT uniquely balances legacy-compatible control (ADSP/ADSC/ADV), flexible I/O voltage, and JTAG testability - making it optimal for incremental upgrades of existing synchronous bus systems without controller rearchitecture.
Availability
CY7C1380KV33-167AXIT is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffering, industrial motion control memory, and avionics data acquisition requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1380KV33-167AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.
The CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented applications in computing, networking, and real-time control systems where deterministic timing and JEDEC-compliant interoperability are critical.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst address sequence: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin - its state is sampled only at power-up and must remain unchanged during operation. Internal pull-up ensures safe default to interleaved mode if left unconnected, matching common x86 processor cache behavior.
Can CE2 be used independently to enable the device without CE1 or CE3?
No. CE2 is active HIGH but functions only in conjunction with CE1 (active LOW) and CE3 (active LOW) - all three must be simultaneously asserted per the truth table. CE1 is the primary enable; if CE1 is HIGH, ADSP is ignored regardless of CE2/CE3 state. This hierarchical enable scheme supports multi-bank memory decoding in large systems.
Does the ZZ sleep mode affect data retention time or require special power sequencing?
ZZ mode preserves data indefinitely as long as VDD and VDDQ remain within specification (≥2.7 V for VDD, ≥2.3 V for VDDQ). No special power sequencing is required - ZZ may be asserted anytime during operation. The internal pull-down eliminates need for external resistor, and exit latency is one clock cycle after ZZ returns LOW.
How does the device handle simultaneous ADSP and ADSC assertion?
When both ADSP and ADSC are asserted LOW, the device recognizes only ADSP - ADSC is ignored. This priority design ensures compatibility with systems where both processor and controller strobes may coincide, guaranteeing consistent address capture behavior aligned with CPU-initiated accesses rather than peripheral-initiated ones.
CY7C1380KV33-167AXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1380KV33-167AXIT FAQ
1.How can I place an order for CY7C1380KV33-167AXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1380KV33-167AXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1380KV33-167AXIT reliable?
The price and inventory of CY7C1380KV33-167AXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1380KV33-167AXIT is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1380KV33-167AXIT transactions.
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CY7C1380KV33-167AXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1380KV33-167AXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1380KV33-167AXIT?
For technical support, including CY7C1380KV33-167AXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1380KV33-167AXIT requirements.
6.How does Aetrix verify that CY7C1380KV33-167AXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1380KV33-167AXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1380KV33-167AXIT meets industry standards.
7.What is the process for return or replacement of CY7C1380KV33-167AXIT?
All CY7C1380KV33-167AXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1380KV33-167AXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1380KV33-167AXIT part is unused and in its original packaging.
Return procedure for CY7C1380KV33-167AXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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