Infineon Technologies CY7C1380KV33-167BZI
- Part No.:
- CY7C1380KV33-167BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1380KV33-167BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1380KV33-167BZI from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, operating at 167 MHz (tCO = 3.4 ns), supporting 3.3 V core and 2.5/3.3 V I/O supplies, and featuring registered inputs/outputs for high-speed burst-mode cache interfacing in networking line cards and telecom switching fabric.
For engineers reviewing the CY7C1380KV33-167BZI datasheet, CY7C1380KV33-167BZI pinout, CY7C1380KV33-167BZI application, or CY7C1380KV33-167BZI equivalent, key selection factors include its 100-pin TQFP package, synchronous self-timed write, interleaved/linear burst control via MODE pin, and JTAG boundary-scan support for system-level testability.
Technical Context
This SRAM implements a two-bit wraparound burst counter synchronized to CLK's rising edge, with address latching controlled by ADSP (processor strobe) or ADSC (controller strobe), and burst advancement triggered by ADV. All synchronous inputs-including A[1:0], CE1/CE2/CE3, BWA–BWD, BWE, GW, and OE-are registered on the clock edge.
It supports byte-write operations via four independent byte-write drivers (DQA/DQP A through DQD/DQP D), each controlled by corresponding BWX and BWE, plus global write (GW) that overrides all byte selects. Output enable (OE) is asynchronous, enabling fast tri-state control independent of clock timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst throughput in cache subsystems |
| Access Time (tCO) | 3.4 ns - clock-to-output delay limiting read latency in pipelined data paths |
| Core Supply Voltage | 3.3 V ± 0.3 V - powers internal logic and memory array; requires dedicated LDO regulation |
| I/O Supply Voltage | 2.5 V or 3.3 V - selectable interface voltage matching host processor I/O domain |
| Burst Mode Control | MODE pin strapping - linear or interleaved addressing selected at power-up, not runtime |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing without physical probe access |
Pinout & Package
Package: 100-pin JEDEC-standard Pb-free TQFP (14 × 20 × 1.4 mm), RoHS-compliant, with exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronizes all registered inputs/outputs; rising edge captures addresses, controls burst counter increment |
| ADSP / ADSC | Address strobe inputs | ADSP initiates processor-originated accesses; ADSC used for controller-initiated bursts; mutually exclusive priority |
| ADV | Burst advance signal | Triggers internal address increment during burst sequences; sampled synchronously on CLK rise |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous chip select: CE1 (active LOW), CE2 (active HIGH), CE3 (active LOW) for bank decoding |
| BWA–BWD, BWE, GW | Byte write controls | Four independent byte masks + enable + global override - enables flexible partial-word writes without external logic |
| DQA–DQD, DQP A–DQP D | Data I/O terminals | 36-bit bidirectional data bus with parity bits (DQP); direction controlled by asynchronous OE |
| OE | Output enable | Asynchronous, active-LOW - enables fast output disable between cycles, critical for bus sharing |
| ZZ | Sleep mode control | Asynchronous, active-HIGH - reduces standby current while preserving data; internal pull-down allows floating for normal operation |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined synchronous interface | Eliminates external latch logic by registering all inputs/outputs on CLK edge, reducing PCB routing complexity and skew sensitivity |
| Configurable burst order | MODE pin selects linear or interleaved addressing - matches native burst behavior of Intel Pentium or PowerPC processors |
| Synchronous self-timed write | On-chip write timing control removes need for external write pulse generation or wait-state insertion |
| Asynchronous OE and ZZ | Enables immediate output disable and low-power sleep entry without waiting for clock edge - essential for real-time bus arbitration |
| JTAG boundary scan | IEEE 1149.1 compliance supports automated PCB test coverage for high-density interconnects in telecom modules |
Applications
| Network Line Card Cache | Telecom Switch Fabric Buffer |
|---|---|
Use Scenario: High-throughput packet buffering in OC-192/STM-64 line interface modules requiring deterministic latency. IC Role / Device Role / Timing Role: Secondary cache SRAM interfaced to network processor's 36-bit burst bus, providing sub-4 ns read access for header lookup pipelines. Use Value: Pipelined register interface eliminates setup/hold violations at 167 MHz, enabling direct connection to NP's synchronous bus without glue logic. | Use Scenario: Shared memory buffer in multi-port ATM or Ethernet switch fabric ASICs handling >10 Gbps aggregate traffic. IC Role / Device Role / Timing Role: Burst-mode data staging memory with interleaved addressing to match crossbar scheduler's access pattern. Use Value: Dual chip-enable scheme (CE1/CE2/CE3) allows seamless integration into 4-bank memory subsystems without external decode logic. |
| Baseband Processor L2 Cache | Radar Signal Processing FIFO |
Use Scenario: Low-latency instruction/data cache for dual-core DSPs in 4G/LTE baseband units operating under strict thermal constraints. IC Role / Device Role / Timing Role: Synchronous SRAM acting as L2 cache with 3.3 V core / 2.5 V I/O separation to minimize noise coupling into analog RF sections. Use Value: ZZ sleep mode reduces idle current to <5 mA while retaining data - extends thermal margin during burst-processing gaps. | Use Scenario: Real-time radar echo sample buffering in airborne phased-array systems requiring radiation-tolerant, deterministic access. IC Role / Device Role / Timing Role: High-reliability burst FIFO storing ADC samples prior to FFT processing; JTAG scan verifies interconnect integrity pre-flight. Use Value: 100-pin TQFP package offers superior thermal dissipation vs. FBGA in conduction-cooled avionics enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C331663A-167BIN | 3.3 V only I/O supply; no 2.5 V option; lacks JTAG; 165-ball FBGA only | Targeted at cost-sensitive industrial controllers where boundary-scan is unnecessary | Select when JTAG is unused and board layout favors FBGA over TQFP |
| IS61WV102436B-167TQLI | Lower max current (143 mA vs. 163 mA); no ZZ sleep mode; identical 100-pin TQFP footprint | Suitable for non-power-constrained embedded systems lacking sleep-state requirements | Choose if thermal budget permits higher static current and sleep mode is not required |
Compared with AS7C331663A-167BIN and IS61WV102436B-167TQLI, CY7C1380KV33-167BZI uniquely supports dual-voltage I/O, integrated JTAG, and asynchronous ZZ sleep - making it optimal for telecom and aerospace designs demanding testability, flexibility, and power-aware operation.
Availability
CY7C1380KV33-167BZI is available at Aetrix Electronics and suitable for network line card cache, telecom switch fabric buffer, and baseband processor L2 cache applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C1380KV33-167BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-mode secondary cache and packet buffer applications in carrier-grade networking and real-time signal processing systems.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst addressing order: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin-must be set at power-up and remain unchanged during operation. Internal pull-up ensures safe default (interleaved) if left unconnected, but explicit grounding is required for linear mode.
Can CY7C1380KV33-167BZI operate with mixed 2.5 V and 3.3 V I/O interfaces on the same device?
No. VDDQ must be set to a single voltage-either 2.5 V or 3.3 V-for all I/O pins (DQx, DQP x, OE, etc.). The device does not support split I/O voltage domains. System design must ensure all connected logic shares the chosen VDDQ level to avoid contention or damage.
Is the ZZ pin compatible with automatic power-down control from an FPGA GPIO?
Yes. ZZ is asynchronous and active-HIGH, with internal pull-down. An FPGA GPIO can drive it directly-asserting HIGH enters low-power sleep (<5 mA ICC), and driving LOW returns to full operation. No external pull-up is needed, and no timing relationship to CLK is required.
Does the 100-pin TQFP package include JTAG pins?
No. TQFP packaging omits TDI, TDO, TMS, and TCK pins-JTAG boundary-scan is unavailable in this variant. Only the 165-ball FBGA package supports IEEE 1149.1. Designers requiring scan testing must select the FBGA variant or implement alternative test strategies for TQFP-based boards.
CY7C1380KV33-167BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1380KV33-167BZI FAQ
1.How can I place an order for CY7C1380KV33-167BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1380KV33-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1380KV33-167BZI reliable?
The price and inventory of CY7C1380KV33-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1380KV33-167BZI is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1380KV33-167BZI?
For technical support, including CY7C1380KV33-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1380KV33-167BZI requirements.
6.How does Aetrix verify that CY7C1380KV33-167BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1380KV33-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1380KV33-167BZI meets industry standards.
7.What is the process for return or replacement of CY7C1380KV33-167BZI?
All CY7C1380KV33-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1380KV33-167BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1380KV33-167BZI part is unused and in its original packaging.
Return procedure for CY7C1380KV33-167BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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