Infineon Technologies CY7C1380KV33-167BZIT

Overview

CY7C1380KV33-167BZIT from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, operating at 167 MHz (t_CO = 3.4 ns), supporting 3.3 V core and 2.5/3.3 V I/O supplies, and featuring registered inputs/outputs for high-speed burst-mode cache interfacing in network processors and telecom line cards.

For engineers reviewing the CY7C1380KV33-167BZIT datasheet, CY7C1380KV33-167BZIT pinout, CY7C1380KV33-167BZIT application, or CY7C1380KV33-167BZIT equivalent, key selection criteria include synchronous burst timing (linear/interleaved), three-chip-enable depth expansion, byte-write control granularity (BWA–BWD + BWE), JTAG boundary-scan support, and TQFP-100 Pb-free packaging compatibility with JEDEC-standard I/O levels.

Technical Context

This SRAM implements a two-bit synchronous burst counter, clocked on CLK's rising edge, with address capture triggered by ADSP (processor strobe) or ADSC (controller strobe). All synchronous inputs-including A[1:0], CE1/CE2/CE3, ADV, GW, BWE, and BWX-are registered on the same clock edge.

It supports asynchronous OE-controlled output tri-state and ZZ sleep mode (active HIGH), with internal self-timed write cycles and selectable linear/interleaved burst order via static MODE pin. The device delivers a 3-1-1-1 access rate and single-cycle chip deselect capability.

Key Specifications

Pinout & Package

Package: 100-pin Pb-free TQFP (14 × 20 × 1.4 mm), JEDEC standard, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pipelined SRAM applications.

Compared with AS7C331025B-167BIN and IS61WV102432BLL-167TQLI, CY7C1380KV33-167BZIT uniquely supports dual I/O voltage, programmable burst order, asynchronous sleep, and depth-expansion chip enables - making it optimal for complex, multi-bank, mixed-voltage cache subsystems requiring testability and power management.

Availability

CY7C1380KV33-167BZIT is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, and baseband modem memory applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant TQFP packaging.

Supply support for CY7C1380KV33-167BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-mode secondary cache and buffer applications in networking and signal-processing ASICs.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address sequence: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin - its state is sampled once at power-up and must remain unchanged during operation. Internal pull-up ensures safe default (interleaved) if left unconnected.

Does CY7C1380KV33-167BZIT support JTAG boundary scan in the TQFP package?

No. JTAG signals (TCK, TMS, TDI, TDO) are only present on the 165-ball FBGA variant. The 100-pin TQFP package (BZIT suffix) omits these pins entirely; boundary scan is unavailable in this package. Designers requiring JTAG must select the FBGA version.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep with full data retention and typical standby current <100 µA. Wake-up is asynchronous: data becomes valid within t_ZZ = 25 ns after ZZ returns LOW, with no clock or initialization sequence required. Internal pull-down ensures automatic wake-up if ZZ floats.

Can CE2 be used independently as a primary chip enable, or is it always paired with CE1 and CE3?

CE2 is always used in conjunction with CE1 and CE3 for three-level decode - CE1 (active LOW), CE2 (active HIGH), and CE3 (active LOW) together determine device selection. CE2 cannot act alone; it is sampled only when CE1 is active and a new address is loaded. Its active-HIGH polarity enables hierarchical bank decoding in multi-SRAM systems.