Infineon Technologies CY7C1380KV33-200AXC

Overview

CY7C1380KV33-200AXC from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, operating at 200 MHz with 3.0 ns clock-to-output delay, 3.3 V core supply, and 2.5/3.3 V I/O support - deployed in high-speed CPU cache subsystems requiring burst-mode memory access.

For engineers reviewing the CY7C1380KV33-200AXC datasheet, CY7C1380KV33-200AXC pinout, CY7C1380KV33-200AXC application, or CY7C1380KV33-200AXC equivalent, key selection criteria include synchronous burst timing (linear/interleaved), byte-write granularity (4×9-bit), JEDEC-compliant TQFP-100 packaging, and JTAG boundary-scan testability for system-level validation.

Technical Context

This SRAM implements a two-bit synchronous burst counter, registered address/data paths, and pipelined read/write control logic synchronized to CLK's rising edge. All inputs except OE and ZZ are clocked; outputs are registered with tCO = 3.0 ns (200 MHz grade).

It supports dual-address-strobe operation (ADSP/ADSC), asynchronous OE-driven output tri-state, and ZZ sleep mode with data retention. Burst sequencing is selectable via static MODE pin (linear vs. interleaved), and write operations are self-timed with byte-select (BWA–BWD) and global-write (GW) control.

Key Specifications

Pinout & Package

Package: 100-pin JEDEC-standard Pb-free TQFP (14 × 20 × 1.4 mm), RoHS-compliant, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pipelined SRAM applications.

Compared with AS7C33128P-20JCIN and IS61WV102432BLL-10TLI, CY7C1380KV33-200AXC uniquely delivers 200 MHz synchronous burst operation with on-chip address generation, making it irreplaceable in CPU cache and real-time packet buffering where pipelined latency predictability is mandatory.

Availability

CY7C1380KV33-200AXC is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffering, industrial motion controller memory, and ATE pattern memory requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1380KV33-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic-latency, burst-mode applications in CPU caches and real-time networking hardware.

FAQ

What is the difference between CY7C1380KV33 and CY7C1382KV33?

CY7C1380KV33 is configured as 512K × 36 (18 Mbit), while CY7C1382KV33 is 1M × 18 (also 18 Mbit). Both share identical timing, pinout (in same package), and feature set, but differ in memory organization - affecting address bus width and byte-lane mapping. The 36-bit version supports wider data paths for cache line transfers; the 18-bit version suits narrower bus architectures.

Can CY7C1380KV33-200AXC operate with only 2.5 V I/O supply?

Yes - VDDQ accepts 2.5 V ± 0.2 V, enabling direct interfacing with 2.5 V logic families. Core VDD remains fixed at 3.3 V ± 0.3 V. I/O voltage selection is independent of core supply and does not affect timing specifications, which are guaranteed across both VDDQ options per datasheet AC characteristics tables.

Is JTAG boundary scan supported on the TQFP package?

No - TDO, TDI, TMS, and TCK pins are not bonded out in the 100-pin TQFP package (CY7C1380KV33-200AXC). JTAG functionality is exclusive to the 165-ball FBGA variant. For TQFP-based designs, boundary scan must be implemented externally or omitted from test strategy.

How does the MODE pin affect burst behavior during operation?

The MODE pin is sampled only at power-up or reset; it is not dynamic. Once latched, it fixes burst order (linear or interleaved) for the entire power cycle. Changing MODE during operation has no effect and may cause undefined address sequencing - it must remain static, tied to GND or VDD, with no toggling.