Infineon Technologies CY7C1380KV33-250AXC

Overview

CY7C1380KV33-250AXC from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM configured as 512K × 36, operating at 250 MHz with 2.5 ns clock-to-output delay, 3.3 V core supply, and dual-voltage I/O (2.5 V or 3.3 V). It supports registered address/data inputs, synchronous self-timed writes, and burst addressing for high-speed cache applications in networking and telecom line cards.

For engineers reviewing the CY7C1380KV33-250AXC datasheet, CY7C1380KV33-250AXC pinout, CY7C1380KV33-250AXC application, or CY7C1380KV33-250AXC equivalent, key selection criteria include pipelined bus timing compliance, 100-pin TQFP mechanical fit, byte-write granularity control via BWA–BWD/BWE/GW, and ZZ sleep mode support for power-managed systems.

Technical Context

This SRAM implements a two-bit synchronous burst counter, linear/interleaved burst sequencing selected by the MODE strap pin, and separate ADSP/ADSC address strobes for processor/controller interface flexibility. All synchronous inputs-including A[1:0], CE1–CE3, ADV, ADSP, ADSC, BWA–BWD, BWE, GW, and CLK-are registered on the rising edge of CLK.

Asynchronous controls OE and ZZ operate independently of CLK: OE enables tri-state output control during read cycles, while ZZ places the device in low-power sleep with data retention. The memory array delivers 3-1-1-1 access rate performance and supports single-cycle chip deselect and asynchronous output enable for fast bus turnaround.

Key Specifications

Pinout & Package

The CY7C1380KV33-250AXC is packaged in a JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), with 36 bidirectional data I/Os (DQA–DQD, DQPA–DQPD), four byte-write selects (BWA–BWD), global write (GW), three chip enables (CE1–CE3), dual address strobes (ADSP, ADSC), advance (ADV), output enable (OE), sleep (ZZ), and dedicated VDD/VSS/VDDQ/VSSQ rails.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Compared with AS7C331025B-25JCIN and IS61WV102436BLL-250BLI, the CY7C1380KV33-250AXC provides tighter timing (2.5 ns tCO), dual-strobe interface adaptability, and hardware-configurable burst sequencing-critical for legacy processor coexistence and deterministic cache subsystem design.

Availability

CY7C1380KV33-250AXC is available at Aetrix Electronics and suitable for networking line cards, telecom baseband processors, industrial PLC backplanes, and avionics data concentrators requiring stable component supply across extended production lifecycles.

Supply support for CY7C1380KV33-250AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

The CY7C1380KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented cache and buffer applications in protocol-aware systems requiring ADSP/ADSC flexibility and mixed-voltage I/O interoperability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects linear or interleaved burst addressing: tied to GND for linear, VDD or floating for interleaved. It is a static strap pin-must remain unchanged during operation. Internal pull-up ensures safe default behavior if left unconnected. This setting directly determines how the internal two-bit burst counter increments addresses during ADV-driven sequences.

Can CY7C1380KV33-250AXC operate with 2.5 V I/O while using 3.3 V core supply?

Yes. The device separates core (VDD/VSS) and I/O (VDDQ/VSSQ) power domains. VDDQ may be set to 2.5 V or 3.3 V independently, enabling direct interface to 2.5 V buses while maintaining 3.3 V core logic integrity. All I/O pins meet JESD8-5 specifications at either voltage, ensuring signal compatibility and noise margin.

How does the ZZ sleep mode affect timing and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention. Core clocks and I/O drivers are gated, reducing current draw to microamp levels. No timing parameters apply during sleep; exit requires ZZ return to LOW followed by one valid CLK cycle before normal operation resumes. Internal pull-down eliminates need for external biasing.

What distinguishes ADSP and ADSC, and when is each used?

ADSP (processor address strobe) and ADSC (controller address strobe) provide independent address capture paths. ADSP has priority-if both are active, only ADSP is recognized. ADSP is typically used for CPU-initiated accesses; ADSC for DMA or peripheral controller access. Both sample addresses and load A[1:0] into the burst counter on CLK rise, enabling seamless coexistence of heterogeneous bus masters.