Infineon Technologies CY7C1381C-100AC
- Part No.:
- CY7C1381C-100AC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1381C-100AC.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1381C-100AC from Cypress Semiconductor is a 3.3V, 512K × 36-bit synchronous flow-through SRAM with 100-MHz clock support, 8.5 ns clock-to-output delay, JEDEC-standard 100-pin TQFP package, and dual VDD/VDDQ supply architecture. It serves as high-speed cache or buffer memory in Pentium-class microprocessor systems requiring burst-mode addressing, low-latency read/write cycles, and glueless interfacing.
For engineers reviewing the CY7C1381C-100AC datasheet, CY7C1381C-100AC pinout, CY7C1381C-100AC application, or CY7C1381C-100AC equivalent, key selection criteria include burst sequence control (linear/interleaved), synchronous write timing with GW/BWE/BWA–BWD byte enable logic, CE1/CE2/CE3 depth-expansion capability, and compatibility with 2.5V or 3.3V I/O voltage domains.
Technical Context
The CY7C1381C-100AC implements a synchronous, flow-through architecture with a 2-bit on-chip burst counter that auto-increments addresses during burst reads/writes. All address, data, and control inputs (ADSP, ADSC, ADV, CE1–CE3, BWx, BWE, GW) are registered on the rising edge of CLK, ensuring deterministic setup/hold timing.
It supports two asynchronous controls-OE for output tri-state management and ZZ for non-time-critical sleep mode-with internal pull-down on ZZ and internal pull-up on MODE. The device uses separate core (VDD = 3.3V ±5%/+10%) and I/O (VDDQ = 2.5V or 3.3V) supplies, with JESD8-5-compliant input thresholds and output drive strength.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512K × 36 bits (18 Mb total); enables single-chip replacement of multiple smaller SRAMs in wide-data-path systems. |
| Max Clock Frequency | 100 MHz; defines maximum sustained burst throughput of 400 MB/s (36-bit bus × 100 MHz). |
| Access Time (tCO) | 8.5 ns; guaranteed clock-to-output delay under 100-MHz operation, critical for meeting tight processor wait-state budgets. |
| VDD / VDDQ Supply | 3.3V ±5% (core), 2.5V or 3.3V (I/O); allows interoperability with both legacy 3.3V and newer low-voltage 2.5V logic families. |
| Burst Mode Control | MODE pin selects Intel Pentium-compatible interleaved (MODE = HIGH) or linear (MODE = LOW) sequences; determines address mapping for cache line fills. |
| Chip Enable Architecture | Three independent enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW); supports hierarchical memory decoding and multi-bank expansion. |
| Power Consumption | 175 mA max operating current, 70 mA CMOS standby current; enables thermal management in dense memory subsystems. |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 × 14 mm body, 0.5 mm pitch, RoHS-compliant, JEDEC MO-140 standard.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A[18] | Synchronous Address Input | 19-bit address bus sampled on CLK rise when ADSP/ADSC active; A[1:0] load 2-bit burst counter. |
| DQ0–DQ35 | Bidirectional Data I/O | 36-bit synchronous data path; direction controlled by OE; automatically tri-stated during writes and deselection. |
| DQPA–DQPD | Bidirectional Parity I/O | 4-bit parity bus synchronized with DQs; each pair (e.g., DQPA/DQA) shares byte-write control via BWA. |
| CE1, CE2, CE3 | Depth-Expansion Chip Enables | Three-level decode: CE1 (active LOW), CE2 (active HIGH), CE3 (active LOW); enables stacking up to 8 devices without external logic. |
| ADSP / ADSC | Address Strobe Inputs | ADSP (processor strobe) takes priority over ADSC (controller strobe); both qualify address capture and burst initiation. |
| ADV | Address Advance Control | Asserted LOW on CLK rise to increment burst counter; enables continuous sequential access without external address generation. |
| BWA–BWD, BWE | Byte Write Controls | BWA–BWD select 4 × 9-bit bytes; BWE enables byte write function-both required LOW for valid byte write cycle. |
| GW | Global Write Enable | Active LOW on CLK rise forces write to all 36 data bits regardless of BWx states; used for full-word initialization. |
| OE | Asynchronous Output Enable | Active LOW enables DQ/DQP outputs; HIGH places pins in high-impedance state-overrides synchronous timing during transitions. |
| ZZ | Asynchronous Sleep Input | Active HIGH reduces dynamic power by disabling internal clocks while preserving data; internal pull-down allows floating for normal operation. |
| MODE | Burst Sequence Selector | Static strap pin: HIGH = interleaved (0,2,4,6,… then 1,3,5,7,…); LOW = linear (0,1,2,3,…); must remain stable during operation. |
| VDD / VDDQ / VSS / VSSQ | Power & Ground Terminals | VDD (core, 3.3V), VDDQ (I/O, 2.5V/3.3V), VSS (core GND), VSSQ (I/O GND); decoupling required per JEDEC layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through synchronous interface | Eliminates pipeline stalls by delivering data on same clock cycle as address capture-no added latency between consecutive burst words. |
| User-selectable burst order | Hardware-configurable MODE pin supports both Intel Pentium interleaved and linear burst patterns without firmware or register programming. |
| Separate processor/controller address strobes | ADSP and ADSC allow concurrent CPU and cache controller access arbitration, enabling split-transaction memory subsystems. |
| Synchronous self-timed write | Internal write timing is fully clock-synchronized-no external wait-state generation needed for reliable burst writes. |
| JTAG boundary scan (BGA/fBGA only) | Not applicable to CY7C1381C-100AC (TQFP package lacks TDI/TDO/TMS/TCK pins), but confirms pin-compatibility path for BGA variants. |
Applications
| High-Performance CPU Cache | Network Packet Buffer |
|---|---|
|
Use Scenario: L2 cache memory interfaced directly to Intel Pentium-class processors operating at 100 MHz front-side bus. IC Role / Device Role / Timing Role: Synchronous flow-through SRAM providing zero-wait-state burst reads with 8.5 ns tCO, using ADSP-driven address capture and MODE-configured interleaved bursts. Use Value: Eliminates glue logic and reduces PCB layer count by supporting direct CPU bus connection with native burst alignment and automatic address incrementing. |
Use Scenario: Temporary storage for 10/100/1000 Mbps Ethernet switch ASICs buffering variable-length frames before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with 36-bit data width and synchronous write enable (GW/BWE) for rapid frame ingestion and egress. Use Value: Enables full-line-rate packet buffering with deterministic 100-MHz throughput and simultaneous read/write capability via separate CE1/CE2 control. |
| Industrial Motion Controller Memory | Medical Imaging Frame Store |
|
Use Scenario: Real-time position interpolation engine requiring deterministic access to trajectory lookup tables stored in fast static RAM. IC Role / Device Role / Timing Role: Deterministic-access memory subsystem using ZZ sleep mode between motion segments to reduce average power without data loss. Use Value: Guarantees sub-10 ns read response time across temperature range while maintaining data integrity during intermittent operation cycles. |
Use Scenario: Digital radiography system capturing 12-bit grayscale X-ray frames at 30 fps into on-board memory prior to DICOM compression. IC Role / Device Role / Timing Role: Wide-data-path frame buffer with 512K × 36 organization supporting parallel pixel loading and burst-aligned DMA transfers. Use Value: Delivers 400 MB/s sustained bandwidth to match sensor output rate, minimizing dead time between exposures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1381D-100AC | Same pinout and timing, but revised die revision with improved AC/DC parametric consistency and extended industrial temperature range (–40°C to +85°C vs. original 0°C to +70°C). | Required for extended-temperature deployments; identical functional behavior in standard environments. | Select CY7C1381D-100AC for new designs targeting industrial or automotive-adjacent use cases where temperature margin is critical. |
| IS61WV102436BLL-100BLI | 1M × 36-bit density, 100 MHz, 3.3V core, but uses single VDDQ (3.3V only) and lacks CE2/CE3-only CE and OE controls. | Supports larger memory maps but requires redesign of chip-enable decoding and may need level-shifting for 2.5V I/O interfaces. | Choose only if capacity >512K × 36 is mandatory and existing CE2/CE3 logic can be removed or reconfigured. |
Compared with CY7C1381C-100AC, the CY7C1381D-100AC offers enhanced reliability across temperature extremes without design change, while the IS61WV102436BLL-100BLI trades pin compatibility and flexible I/O voltage support for higher density-making it suitable only when capacity outweighs integration simplicity.
Availability
CY7C1381C-100AC is available at Aetrix Electronics and suitable for high-speed CPU cache subsystems, network packet buffering, industrial motion control, and medical imaging frame storage requiring stable component supply, long-lifecycle support, and consistent parametric performance.
Supply support for CY7C1381C-100AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.
The CY7C1381C belongs to Cypress's synchronous SRAM product line, engineered specifically for glueless interfacing with x86 and RISC microprocessors requiring burst-mode, low-latency, flow-through memory access in compute- and communications-intensive systems.
FAQ
What is the function of the MODE pin on CY7C1381C-100AC?
The MODE pin selects burst sequence type: tied HIGH (or left floating, due to internal pull-up) enables Intel Pentium-style interleaved bursts (0,2,4,6,… then 1,3,5,7,…), while tied LOW selects linear bursts (0,1,2,3,…). It is a static configuration pin-must not toggle during operation-and directly controls the on-chip 2-bit burst counter's increment logic.
Can CY7C1381C-100AC operate with 2.5V I/O while maintaining 3.3V core supply?
Yes. The device supports independent VDD (3.3V ±5%/+10%) and VDDQ (2.5V or 3.3V) supplies. When VDDQ = 2.5V, all DQ/DQP outputs swing between 0V and 2.5V, and inputs meet JESD8-5 thresholds for 2.5V logic families-enabling direct interface with FPGA or ASIC I/O banks running at 2.5V without level shifters.
How does the ZZ sleep mode affect data retention and wake-up timing?
In ZZ mode (pin driven HIGH), the device enters a low-power state where internal clocks halt but SRAM cell data is retained indefinitely as long as VDD remains within specification. Wake-up is asynchronous: asserting ZZ LOW restores full operation within one CLK cycle-no additional stabilization delay is required before issuing the next command.
Is the CY7C1381C-100AC pin-compatible with CY7C1383C-100AC?
No. Although both share the 100-pin TQFP package and many signal names, CY7C1383C is a 1M × 18-bit device with different address pin count (A0–A19), reduced DQ count (18 vs. 36), and no DQPA–DQPD parity lines. Pinouts differ significantly-especially in data, address, and byte-write signal allocation-making them electrically and logically incompatible.
CY7C1381C-100AC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1381C-100AC FAQ
1.How can I place an order for CY7C1381C-100AC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381C-100AC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381C-100AC reliable?
The price and inventory of CY7C1381C-100AC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381C-100AC is usually 5 days.
3.What payment methods are accepted for CY7C1381C-100AC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381C-100AC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1381C-100AC?
CY7C1381C-100AC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1381C-100AC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381C-100AC?
For technical support, including CY7C1381C-100AC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381C-100AC requirements.
6.How does Aetrix verify that CY7C1381C-100AC is sourced from the original manufacturer or authorized distributors?
All CY7C1381C-100AC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381C-100AC meets industry standards.
7.What is the process for return or replacement of CY7C1381C-100AC?
All CY7C1381C-100AC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381C-100AC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381C-100AC part is unused and in its original packaging.
Return procedure for CY7C1381C-100AC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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