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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY7C1381D-100BZIT

Name: CY7C1381D-100BZIT
Brand: Infineon Technologies
SKU: CY7C1381D-100BZIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7C1381D-100BZIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 165-LBGA

Datasheet:: CY7C1381D-100BZIT.pdf

Description:: IC SRAM 18MBIT PAR 165FBGA

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Product details

Overview

CY7C1381D-100BZIT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous flow-through SRAM with 3.3 V core supply, 2.5 V/3.3 V I/O supply, 133 MHz operation, 6.5 ns clock-to-output delay, and JEDEC-standard Pb-free 100-pin TQFP packaging. It interfaces directly with high-speed microprocessors in cache and buffer subsystems requiring burst-mode memory access with minimal glue logic.

For engineers reviewing the CY7C1381D-100BZIT datasheet, CY7C1381D-100BZIT pinout, CY7C1381D-100BZIT application, or CY7C1381D-100BZIT equivalent, key selection criteria include synchronous burst timing (interleaved/linear), dual-voltage I/O support, ZZ sleep mode behavior, and compatibility with Pentium-style address strobe protocols (ADSP/ADSC/ADV).

Technical Context

The CY7C1381D-100BZIT implements a synchronous flow-through architecture with a 2-bit on-chip burst counter that auto-increments addresses on ADV assertion, supporting both Intel Pentium interleaved and linear burst sequences selected via the MODE pin. All address, data, and control inputs (CE1/CE2/CE3, BWx, BWE, GW, ADSP, ADSC) are registered on the rising edge of CLK.

Asynchronous signals OE and ZZ operate independently of CLK: OE enables tristate output control during reads, while ZZ places the device in low-power sleep with data retention. The device supports separate processor (ADSP) and controller (ADSC) address strobes, and provides synchronous self-timed write with byte-write granularity via four active-low BW pins and global write (GW).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	18 Mbit (512K × 36 organization), enabling full-word buffering for 36-bit data buses without external width expansion.
Max Clock Frequency	133 MHz - supports high-bandwidth CPU/cache interface timing with deterministic 2-1-1-1 access rate.
Access Time (t_CO)	6.5 ns - defines minimum clock-to-output delay for read data valid timing in synchronous burst cycles.
Core Supply Voltage	3.3 V ± 0.3 V - powers internal logic and memory array; requires stable low-noise regulation per JEDEC JESD8-5.
I/O Supply Voltage	2.5 V or 3.3 V - selectable VDDQ allows interoperability with mixed-voltage system buses (e.g., 2.5 V ASIC + 3.3 V SRAM).
Burst Mode Control	MODE pin selects interleaved (HIGH) or linear (LOW) addressing - matches legacy Pentium or modern controller burst protocols.
Sleep Mode	ZZ pin (active HIGH) enables non-time-critical sleep with data retention; internal pull-down ensures safe default LOW state.

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, surface-mountable with standard reflow profile.

Pin/Terminal	Circuit Role	Design Meaning
A0, A1, A[1:0]	Synchronous address inputs	Sampled on CLK rise when ADSP/ADSC active; feed 2-bit burst counter to generate sequential addresses during burst.
ADSP / ADSC	Address strobe inputs	ADSP (processor) takes priority over ADSC (controller); both trigger address latching and burst counter load on CLK rise.
ADV	Burst address advance	Asserted LOW on CLK rise to increment internal burst counter - enables fully synchronous burst without external address generation.
BWA–BWD, BWE	Byte write controls	Four independent byte enables (BWA–BWD) qualified by BWE; allow partial-word writes to 36-bit DQ bus without disturbing other bytes.
ZZ	Asynchronous sleep input	Active HIGH; must be externally tied to GND per errata (Page 32) - floating or HIGH causes undefined power state.
DQs / DQPX	Bidirectional data/parity I/O	36 data lines (DQA–DQD) + 4 parity lines (DQPA–DQPD); direction controlled by asynchronous OE; tristated automatically during writes.

Key Features

Feature	Design Value
Flow-through synchronous architecture	Eliminates pipeline stalls in burst reads - data appears on DQs one clock after address capture, enabling continuous 133 MHz throughput.
User-selectable burst sequence	MODE pin configures interleaved (Pentium-compatible) or linear addressing - avoids redesign when migrating between CPU families.
Dual-voltage I/O (VDDQ)	Supports 2.5 V or 3.3 V interface levels - simplifies integration with mixed-voltage SoCs and eliminates level-shifter components.
IEEE 1149.1 JTAG boundary scan	Enables board-level testability and interconnect verification - though JTAG must be used in BYPASS mode per errata (Page 32).
Separate ADSP/ADSC strobes	Allows concurrent use of processor and cache controller address paths - essential for multi-master bus arbitration in high-end embedded systems.

Applications

Level-1 Cache Buffer

Network Packet Buffer

Use Scenario: High-speed L1 cache line fill and write-back in x86-compatible embedded processors.

IC Role / Device Role / Timing Role: Flow-through SRAM acting as 36-bit-wide cache tag/data store with 6.5 ns t_CO, synchronized to CPU clock via ADSP-driven burst reads.

Use Value: Enables zero-wait-state cache operation at 133 MHz - eliminates CPU stall cycles during burst line fills.

Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2 switch fabric controllers.

IC Role / Device Role / Timing Role: Synchronous buffer interfacing with DMA engine using ADSC strobe and ADV-controlled burst writes.

Use Value: Supports 2-1-1-1 burst access pattern matching typical frame header/payload transfer sequences - reduces memory controller overhead.

Industrial PLC Data Log

Avionics Sensor FIFO

Use Scenario: Real-time logging of analog sensor samples at 100 kS/s in ruggedized programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile-buffered FIFO using ZZ sleep mode between sample bursts to reduce average power below 100 mW.

Use Value: Maintains data integrity during intermittent operation while meeting EN 61000-6-2 EMC immunity requirements via clean 3.3 V core switching.

Use Scenario: Time-critical inertial measurement unit (IMU) data streaming in DO-160G-certified avionics modules.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM (neutron soft error immunity specified) serving as deterministic latency FIFO for SPI-sampled gyro/accelerometer data.

Use Value: Guarantees ≤6.5 ns read latency and <8.5 ns write setup - satisfies ARINC 653 partition timing budgets for safety-critical partitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102436BLL-10BLI	10 ns t_CO, 100 MHz max, 3.3 V only VDDQ, no ZZ sleep, 165-ball FBGA only	Lacks ZZ sleep mode and dual-VDDQ flexibility; requires board redesign for package and voltage interface	Select if cost sensitivity outweighs power management needs and FBGA footprint is acceptable.
MT48LC32M32B2-7E:J	SDRAM architecture, 7 ns CL, asynchronous command interface, 3.3 V only, no burst counter or ADSP/ADSC	Requires external memory controller for burst sequencing; incompatible with Pentium-style strobe protocols	Choose only for legacy SDRAM-based platforms where controller firmware cannot be modified.

Compared with IS61WV102436BLL-10BLI and MT48LC32M32B2-7E:J, the CY7C1381D-100BZIT uniquely delivers 133 MHz burst performance with hardware-managed address sequencing, dual-voltage I/O, and configurable sleep - making it irreplaceable in CPU-attached cache and real-time deterministic buffer designs.

Availability

CY7C1381D-100BZIT is available at Aetrix Electronics and suitable for high-reliability industrial control, aerospace data acquisition, and network infrastructure applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1381D-100BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1381D belongs to Cypress's synchronous SRAM product line, engineered specifically for CPU-attached cache and buffer applications demanding deterministic low-latency burst access without external sequencers or glue logic.

FAQ

What is the correct handling of the ZZ pin per official errata?

The ZZ pin (Pin 64 in TQFP) must be externally connected to ground, as stated in the errata on page 32 of Document Number 38-05544 Rev. *V. Leaving it floating or pulling it HIGH violates the device's guaranteed operating conditions and may cause unpredictable current draw or data retention failure during sleep transitions.

Can CY7C1381D-100BZIT operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - the device is explicitly rated for 3.3 V core (VDD) and independent 2.5 V or 3.3 V I/O supply (VDDQ), per Section "Electrical Characteristics" and "AC Test Conditions". This dual-supply capability enables direct interfacing with 2.5 V ASICs or FPGAs without level shifters, provided VDDQ decoupling meets JEDEC JESD8-5 requirements.

How does the burst counter behave during interleaved versus linear addressing?

In interleaved mode (MODE = HIGH), the 2-bit burst counter generates addresses in order 0→2→1→3; in linear mode (MODE = LOW), it increments sequentially 0→1→2→3. Both sequences are fully synchronous to CLK and ADV, and the first address is always loaded from A[1:0] on ADSP/ADSC assertion - no external address generation logic is required.

Is JTAG boundary scan functional for production testing of CY7C1381D-100BZIT?

No - per errata on page 32, JTAG functionality is not guaranteed, and testing must be performed in BYPASS mode. The TAP controller lacks full compliance certification; boundary scan is provided for debug assist only, not for production ICT or solder joint validation.

CY7C1381D-100BZIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 165-LBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 18Mbit

Memory Organization:: 512K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-FBGA (13x15)

CY7C1381D-100BZIT FAQ

1.How can I place an order for CY7C1381D-100BZIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1381D-100BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1381D-100BZIT reliable?

The price and inventory of CY7C1381D-100BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381D-100BZIT is usually 5 days.

3.What payment methods are accepted for CY7C1381D-100BZIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381D-100BZIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1381D-100BZIT?

CY7C1381D-100BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1381D-100BZIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1381D-100BZIT?

For technical support, including CY7C1381D-100BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381D-100BZIT requirements.

6.How does Aetrix verify that CY7C1381D-100BZIT is sourced from the original manufacturer or authorized distributors?

All CY7C1381D-100BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381D-100BZIT meets industry standards.

7.What is the process for return or replacement of CY7C1381D-100BZIT?

All CY7C1381D-100BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381D-100BZIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1381D-100BZIT part is unused and in its original packaging.

Return procedure for CY7C1381D-100BZIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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