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Infineon Technologies CY7C1381KV33-100BZXI
- Part No.:
- CY7C1381KV33-100BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1381KV33-100BZXI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:272
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Product details
Overview
CY7C1381KV33-100BZXI from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 512K × 36 common I/O, operating at 133 MHz with 6.5 ns clock-to-output delay and supporting interleaved/linear burst sequences. It uses 3.3 V core (VDD) and 2.5 V or 3.3 V I/O (VDDQ) supplies, and features JTAG boundary scan and ZZ sleep mode for embedded memory subsystems in high-speed networking line cards.
For engineers reviewing the CY7C1381KV33-100BZXI datasheet, CY7C1381KV33-100BZXI pinout, CY7C1381KV33-100BZXI application, or CY7C1381KV33-100BZXI equivalent, key selection criteria include burst address sequencing (MODE pin), dual supply voltage flexibility (VDDQ = 2.5 V or 3.3 V), synchronous self-timed write timing, asynchronous OE control, and JEDEC-standard 100-pin TQFP packaging with validated ECC error correction.
Technical Context
This SRAM implements a synchronous, clock-driven interface with all address/data/control inputs registered on the rising edge of CLK, including ADSP/ADSC strobes, CE1–CE3 enables, and BWx/BWE byte-write controls. The 2-bit internal burst counter (A[1:0]) auto-increments addresses during burst cycles controlled by ADV, supporting both interleaved and linear sequences selected statically via MODE.
It integrates asynchronous OE and ZZ pins for output enable and non-time-critical sleep, respectively, while maintaining data integrity. ECC encoding/decoding operates transparently on all read/write paths, reducing soft error rate without external logic. All I/Os are JEDEC JESD8-5-compliant, with separate VDDQ/VSSQ for I/O domain isolation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 133 MHz - enables 2-1-1-1 burst access rate for high-throughput cache coherency |
| Access Time | 6.5 ns clock-to-output - meets tight timing budgets in FPGA-attached memory buffers |
| Core Supply | 3.3 V (VDD) - compatible with legacy 3.3 V system rails and low-power microprocessor interfaces |
| I/O Supply | 2.5 V or 3.3 V (VDDQ) - supports mixed-voltage interconnect to 2.5 V FPGAs or 3.3 V ASICs |
| ECC Support | On-chip encode/decode - corrects single-bit errors and detects double-bit errors per 36-bit word |
| Burst Mode | User-selectable interleaved or linear via MODE pin - matches processor/cache controller addressing patterns |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint. Pin count and layout match industry-standard 100-pin SRAM sockets for drop-in compatibility in legacy designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Synchronous Address Inputs | Sampled on CLK rising edge when ADSP/ADSC active; A[1:0] preload 2-bit burst counter |
| CLK | System Clock Input | Edge-triggered master timing reference for all synchronous registers and burst advancement |
| ADSP / ADSC | Address Strobe Inputs | Processor- or controller-initiated address capture; ADSP takes priority if both asserted |
| ADV | Burst Address Advance | Asserted LOW on CLK edge to increment internal burst counter for next word in sequence |
| BWA–BWD, BWE | Byte Write Controls | Active-LOW synchronous byte masking; BWE enables byte writes, BWx selects DQ group |
| GW | Global Write Enable | Active-LOW synchronous override that writes all 36 bits regardless of BWx states |
| OE | Asynchronous Output Enable | Active-LOW tristate control; overrides synchronous timing for flexible bus sharing |
| ZZ | Asynchronous Sleep Input | Active-HIGH entry into low-power retention mode; internal pull-down allows floating for normal operation |
| DQ[0:35], DQP[0:3] | Bidirectional Data I/O | 36 data + 4 parity lines; direction controlled by OE; DQP lines map 1:1 to DQ nibbles for ECC |
| VDD / VDDQ / VSS / VSSQ | Power & Ground | Separate core (3.3 V) and I/O (2.5 V/3.3 V) domains with dedicated ground returns |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through architecture | Eliminates pipeline stalls between consecutive burst reads/writes, enabling deterministic 2-1-1-1 access pattern |
| Configurable burst order | MODE pin selects interleaved (VDD/floating) or linear (GND) addressing to match CPU or cache controller behavior |
| On-chip ECC | Transparent single-bit correction/double-bit detection per 36-bit word reduces SER without external logic or software overhead |
| Multiple chip-enable scheme | Three independent enables (CE1 active-LOW, CE2 active-HIGH, CE3 active-LOW) support depth expansion across multiple devices |
| JTAG boundary scan | IEEE 1149.1-compliant test access port (TAP) with TCK/TMS/TDI/TDO for board-level interconnect validation |
Applications
| Telecom Line Card Buffering | Industrial PLC Data Logging |
|---|---|
Use Scenario: High-speed packet buffering in 10G Ethernet line cards where deterministic latency and data integrity are critical. IC Role / Device Role / Timing Role: Primary flow-through SRAM buffer interfacing directly with FPGA fabric, absorbing bursty traffic with zero-wait-state throughput. Use Value: 6.5 ns clock-to-output and 2-1-1-1 burst rate ensure sub-10 ns average access time; on-chip ECC prevents silent corruption in radiation-prone telecom environments. | Use Scenario: Non-volatile data staging in programmable logic controllers during power-fail events or firmware updates. IC Role / Device Role / Timing Role: Synchronous memory bank holding real-time I/O snapshots and control state before backup to flash or battery-backed RAM. Use Value: ZZ sleep mode maintains data with <100 µA current draw; dual VDDQ support allows direct interface to 2.5 V sensor ADCs and 3.3 V MCU buses. |
| Medical Imaging Frame Store | Avionics Display Controller Memory |
Use Scenario: Temporary frame storage in digital X-ray or ultrasound systems requiring rapid pixel data ingestion and display refresh. IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as ping-pong frame buffer, synchronized to imaging sensor clock and display controller timing. Use Value: Interleaved burst mode aligns with raster-scan memory access; 36-bit width supports 12-bit pixel + metadata packing without bit-shifting overhead. | Use Scenario: Real-time graphics buffer in certified flight display units where functional safety mandates error detection and mitigation. IC Role / Device Role / Timing Role: Safety-critical memory subsystem storing rendered GUI layers and HUD overlays with guaranteed data correctness. Use Value: On-chip ECC satisfies DO-254/ED-80 fault coverage requirements; JTAG boundary scan enables in-system testability without physical probe access. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102436BLL-10BLI | 10 ns access time, no on-chip ECC, 3.3 V only VDDQ, 165-ball FBGA only | Lacks hardware error correction; requires external ECC logic or software mitigation | Select when cost sensitivity outweighs SER risk and board space permits FBGA routing |
| MT28EW128ABA1HPC-0SIT | 128 Mbit density, QSPI interface, no synchronous burst or ADSP/ADSC controls | Serial interface limits bandwidth; not pin- or functionally compatible for parallel SRAM replacement | Consider only for new designs prioritizing density over latency; not a drop-in alternative |
Compared with IS61WV102436BLL-10BLI and MT28EW128ABA1HPC-0SIT, CY7C1381KV33-100BZXI uniquely delivers 133 MHz synchronous burst performance with integrated ECC in a standard 100-pin TQFP-enabling legacy-compatible upgrades in timing-critical, safety-aware systems without redesigning PCB layout or adding error-handling firmware.
Availability
CY7C1381KV33-100BZXI is available at Aetrix Electronics and suitable for telecom line card buffering, industrial PLC data logging, medical imaging frame stores, and avionics display controller memory requiring stable component supply across extended production lifecycles.
Supply support for CY7C1381KV33-100BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial, automotive, and communications markets.
The CY7C1381KV33 belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, high-reliability memory interfacing in FPGA- and ASIC-based systems where glueless connectivity and deterministic timing are mandatory.
FAQ
What is the function of the MODE pin on CY7C1381KV33-100BZXI?
The MODE pin is a static configuration input that determines burst address sequencing: tied to VDD or left floating selects interleaved burst order, while tied to GND selects linear burst order. It must remain stable during device operation and has an internal pull-up resistor, so no external bias is required for interleaved mode.
Does CY7C1381KV33-100BZXI support 2.5 V I/O operation with 3.3 V core?
Yes - it supports independent 3.3 V core supply (VDD) and 2.5 V I/O supply (VDDQ), allowing seamless interfacing with 2.5 V FPGAs or ASICs while maintaining full 133 MHz performance and 6.5 ns access time. VSSQ must be connected to the same ground plane as VSS for signal integrity.
How does the ZZ sleep mode affect data retention and power consumption?
When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with data fully retained and typical standby current reduced to under 100 µA. The internal pull-down ensures safe default operation when ZZ is left unconnected; no clock or other signals need to be gated externally.
Is JTAG boundary scan available on the 100-pin TQFP package of CY7C1381KV33-100BZXI?
No - JTAG signals (TCK, TMS, TDI, TDO) are not bonded out on the 100-pin TQFP package; they are only available on the 165-ball FBGA variant. The TQFP version omits these pins entirely, and JTAG functionality is therefore unavailable for this specific package option.
CY7C1381KV33-100BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1381KV33-100BZXI FAQ
1.How can I place an order for CY7C1381KV33-100BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381KV33-100BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381KV33-100BZXI reliable?
The price and inventory of CY7C1381KV33-100BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381KV33-100BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1381KV33-100BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381KV33-100BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1381KV33-100BZXI?
CY7C1381KV33-100BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1381KV33-100BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381KV33-100BZXI?
For technical support, including CY7C1381KV33-100BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381KV33-100BZXI requirements.
6.How does Aetrix verify that CY7C1381KV33-100BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1381KV33-100BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381KV33-100BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1381KV33-100BZXI?
All CY7C1381KV33-100BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381KV33-100BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381KV33-100BZXI part is unused and in its original packaging.
Return procedure for CY7C1381KV33-100BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1381KV33-100BZXI Tags
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