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Infineon Technologies CY7C1381KV33-133AXC

Part No.:
CY7C1381KV33-133AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1381KV33-133AXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,665

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Product details

Overview

CY7C1381KV33-133AXC from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 512K × 36 common I/O, supporting 133 MHz bus operations with 6.5 ns clock-to-output delay. It operates from a 3.3 V core supply (VDD) and 2.5 V/3.3 V I/O supply (VDDQ), and features interleaved/linear burst modes, JTAG boundary scan, and ZZ sleep mode - deployed in high-speed cache and memory subsystems for telecom line cards and network processors.

For engineers reviewing the CY7C1381KV33-133AXC datasheet, CY7C1381KV33-133AXC pinout, CY7C1381KV33-133AXC application, or CY7C1381KV33-133AXC equivalent, key selection criteria include burst address sequencing (MODE pin), synchronous write timing with ADSP/ADSC strobes, ECC-enabled soft error resilience, and compatibility with JEDEC-standard 100-pin TQFP packaging.

Technical Context

This SRAM implements a synchronous, flow-through architecture with dual address strobe inputs (ADSP and ADSC), enabling seamless integration with both processor and cache controller interfaces. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, and internal 2-bit burst counter increments addresses automatically during burst sequences.

Burst order is statically selected via MODE pin (interleaved when HIGH, linear when LOW); byte writes are controlled by four active-low BWx signals qualified by BWE, while global write is enabled by GW. On-chip ECC encoder/decoder reduces soft error rate without external logic overhead.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 configuration)
Max Clock Frequency133 MHz - enables 7.5 ns cycle time for high-bandwidth burst transfers
Access Time (tCO)6.5 ns - defines minimum clock-to-output delay for read data valid window
VDD Supply3.3 V ± 0.3 V - core voltage rail powering memory array and logic
VDDQ Supply2.5 V or 3.3 V - selectable I/O voltage supporting mixed-voltage system interfacing
ECC SupportOn-chip single-bit error correction / double-bit error detection - eliminates need for external ECC logic
PackageJEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) - surface-mount compatible with standard reflow profiles

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, lead-free, with exposed thermal pad (not electrically connected).

Pin/TerminalCircuit RoleDesign Meaning
A0, A1, A[2:18]Synchronous Address InputsSampled on CLK rising edge when ADSP/ADSC active; A[1:0] load 2-bit burst counter
CLKSystem Clock InputEdge-triggered master timing reference for all synchronous registers and burst counter
ADSP / ADSCAddress Strobe InputsADSP prioritized over ADSC; both capture address and initiate burst sequence on rising CLK
ADVBurst Address AdvanceAsserted LOW on CLK rising edge to increment internal burst counter for next address
BWA–BWD, BWEByte Write ControlsFour independent byte masks + enable; support partial-word writes without read-modify-write
DQ[0:35], DQP[0:3]Data & Parity I/O36-bit bidirectional data bus with 4-bit parity; direction controlled by OE; tristated automatically during writes
OEAsynchronous Output EnableActive LOW; overrides synchronous timing to force output driver enable/disable immediately
ZZAsynchronous Sleep ControlActive HIGH; places device in low-power state with data retention; internal pull-down allows floating for normal operation
MODEBurst Sequence SelectorStatic strap pin: HIGH = interleaved burst, LOW = linear burst; internal pull-up ensures default interleaved mode

Key Features

FeatureDesign Value
Flow-through synchronous interfaceEliminates pipeline stalls in burst reads/writes - supports 2-1-1-1 access pattern for sustained bandwidth
User-selectable burst modeInterleaved or linear addressing via MODE pin - matches Intel Pentium or Motorola PowerPC cache controller requirements
Integrated ECC engineSingle-bit correction/double-bit detection implemented entirely on-die - reduces SER by >90% without external logic or latency penalty
Three-chip-enable architectureCE1 (active LOW), CE2 (active HIGH), CE3 (active LOW) - enables flexible depth expansion across multiple SRAMs
JTAG boundary scan (IEEE 1149.1)Full scan chain support on FBGA variant; TQFP excludes TDO/TDI/TMS/TCK pins - simplifies board-level testability

Applications

Telecom Line Card BufferingNetwork Processor Cache

Use Scenario: High-throughput packet buffering in 10Gbps+ line cards where deterministic latency and data integrity are critical.

IC Role / Device Role / Timing Role: Primary burst-access SRAM buffer between SerDes PHY and packet classifier ASIC, operating at 133 MHz with zero-wait-state reads.

Use Value: Flow-through architecture delivers 2-1-1-1 access rate; on-chip ECC prevents silent corruption in neutron-rich environments near RF amplifiers.

Use Scenario: L2 cache for multi-core network processors handling deep packet inspection and QoS scheduling.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency instruction/data cache, interfaced via ADSP-strobed address bus with burst counter auto-increment.

Use Value: 6.5 ns tCO and dual ADSP/ADSC strobes allow tight coupling with processor's burst fetch protocol; MODE pin configures interleaved bursts matching cache line layout.

Industrial Motion Controller MemoryRadar Signal Processing Buffer

Use Scenario: Real-time trajectory computation in CNC controllers requiring deterministic memory access under EMI-heavy factory conditions.

IC Role / Device Role / Timing Role: Dedicated SRAM for motion profile lookup tables and interpolation buffers, powered by isolated 3.3 V core and 2.5 V I/O rails.

Use Value: ZZ sleep mode reduces idle power by >85%; ECC mitigates bit flips induced by motor drive switching noise.

Use Scenario: Intermediate storage for ADC samples in pulsed-Doppler radar front-ends before FFT processing.

IC Role / Device Role / Timing Role: High-speed circular buffer capturing 12-bit I/Q data streams at 100+ MSPS using synchronous burst writes triggered by ADSC.

Use Value: 512K × 36 organization maps directly to 32K-sample × 36-bit word depth; ADV-controlled burst increment aligns with sample clock domain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102432BLL-133BLI1024K × 32 (32 Mbit), no on-chip ECC, 3.3 V only VDDQ, no ZZ sleepLacks ECC and low-power sleep - requires external error handling and higher standby currentSelect when raw density and cost outweigh reliability and power constraints
MT28EW128AABA1HCS-0SIT128 Mbit Quad SPI NAND-based pseudo-SRAM, asynchronous interface, built-in ECCNon-synchronous command-set interface; higher latency; not pin-compatibleSelect only for space-constrained designs accepting software-managed burst emulation and longer read cycles

Compared with IS61WV102432BLL-133BLI and MT28EW128AABA1HCS-0SIT, CY7C1381KV33-133AXC uniquely combines true synchronous flow-through timing, hardware ECC, and dual-voltage I/O in a drop-in 100-pin TQFP package - essential for deterministic real-time systems where latency predictability and radiation tolerance are non-negotiable.

Availability

CY7C1381KV33-133AXC is available at Aetrix Electronics and suitable for telecom infrastructure, network processor design, industrial motion control, and radar signal processing requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1381KV33-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

The CY7C1381K series targets high-speed, ECC-protected memory subsystems in mission-critical networking and industrial equipment - emphasizing deterministic timing, radiation-hardened reliability, and seamless microprocessor coherency.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address sequence: HIGH (or floating, due to internal pull-up) enables interleaved burst; LOW (tied to GND) enables linear burst. It is a static strap pin - must be fixed before operation and cannot be changed dynamically. Incorrect configuration causes misaligned burst reads/writes and data corruption.

Does CY7C1381KV33-133AXC support both 2.5 V and 3.3 V I/O simultaneously?

No - VDDQ is a single supply pin that must be set to either 2.5 V or 3.3 V, not both. The device supports interface to either voltage domain, but all DQ/DQP pins share the same VDDQ rail. Mixing voltages on VDDQ violates absolute maximum ratings and risks latch-up.

How does the ZZ sleep mode affect timing and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention and reduced ICC. All outputs go high-impedance, clocks are ignored, and internal logic halts - but memory cell contents remain intact. Exit time from ZZ is asynchronous and requires no setup; data is valid within tZZD (max 20 ns) after ZZ returns LOW.

Can ADSP and ADSC be used concurrently, and what happens if both are asserted?

No - ADSP and ADSC are mutually exclusive. When both are asserted LOW, the device recognizes only ADSP and ignores ADSC. This priority ensures deterministic behavior in systems where both processor and controller may attempt address capture; designers must ensure only one strobe is active per cycle to avoid ambiguous address latching.

CY7C1381KV33-133AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1381KV33-133AXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1381KV33-133AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1381KV33-133AXC reliable?

The price and inventory of CY7C1381KV33-133AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381KV33-133AXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381KV33-133AXC transactions.

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CY7C1381KV33-133AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1381KV33-133AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1381KV33-133AXC?

For technical support, including CY7C1381KV33-133AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381KV33-133AXC requirements.

6.How does Aetrix verify that CY7C1381KV33-133AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1381KV33-133AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381KV33-133AXC meets industry standards.

7.What is the process for return or replacement of CY7C1381KV33-133AXC?

All CY7C1381KV33-133AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381KV33-133AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1381KV33-133AXC part is unused and in its original packaging.

Return procedure for CY7C1381KV33-133AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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