Infineon Technologies CY7C1381KV33-133AXI
- Part No.:
- CY7C1381KV33-133AXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1381KV33-133AXI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:700
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Product details
Overview
CY7C1381KV33-133AXI from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 512K × 36, operating at 133 MHz with 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), and dual-voltage I/O (2.5 V/3.3 V VDDQ), used in high-speed cache and buffer subsystems of network processors and telecom line cards.
For engineers reviewing the CY7C1381KV33-133AXI datasheet, CY7C1381KV33-133AXI pinout, CY7C1381KV33-133AXI application, or CY7C1381KV33-133AXI equivalent, key selection criteria include burst mode control (interleaved/linear via MODE pin), synchronous self-timed write timing, JTAG boundary scan support, and ZZ sleep mode for low-power standby in memory-intensive embedded systems.
Technical Context
This SRAM implements a synchronous, flow-through architecture with a 2-bit internal burst counter that captures A[1:0] on ADSP/ADSC assertion and auto-increments addresses during burst sequences. All address, data, and control inputs (CE1/CE2/CE3, BWx, BWE, GW, ADV) are registered on the rising edge of CLK.
Asynchronous signals OE and ZZ operate independently of CLK: OE enables tristate output control, while ZZ places the device in non-time-critical sleep with data retention. ECC encoding/decoding occurs on-the-fly for all read/write operations to reduce soft error rate (SER).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 organization) |
| Max Clock Frequency | 133 MHz - supports high-bandwidth burst transfers in processor-cache interfaces |
| Access Time (tCO) | 6.5 ns - defines minimum clock-to-output delay for timing-critical read paths |
| VDD Supply | 3.3 V ± 0.3 V - core logic voltage; requires stable low-noise regulation |
| VDDQ Supply | 2.5 V or 3.3 V - selectable I/O voltage enabling compatibility with multiple logic families |
| ECC Support | On-chip single-bit error correction / double-bit error detection - reduces SER without external logic |
| Burst Mode | User-selectable interleaved or linear via MODE pin - matches CPU/cache controller addressing schemes |
Pinout & Package
Package: JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, with exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Synchronous Address Input | Sampled on CLK rise when ADSP/ADSC active; A[1:0] load 2-bit burst counter |
| CLK | System Clock Input | Edge-triggered master clock for all synchronous registers and burst increment timing |
| ADSP / ADSC | Address Strobe (Processor / Controller) | Active-low strobes that latch address and initiate burst; ADSP takes priority if both asserted |
| ADV | Address Advance Control | Asserted on CLK rise to increment internal burst counter for next sequential access |
| DQ[A–D], DQP[A–D] | Bidirectional Data / Parity I/O | 36-bit data + 4-bit parity bus; direction controlled by OE; byte-write enabled via BWx/BWE |
| CE1, CE2, CE3 | Chip Enable Inputs | 3-pin decode scheme (CE1=LOW, CE2=HIGH, CE3=LOW) for depth expansion and bank selection |
| ZZ | Asynchronous Sleep Input | Active-HIGH entry to low-power state with full data retention; internal pull-down allows floating for normal operation |
| MODE | Burst Sequence Selector | Static strap pin: LOW = linear burst, HIGH/floating = interleaved burst; internal pull-up |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through synchronous architecture | Eliminates pipeline stalls in burst reads; enables 2-1-1-1 access pattern for sustained bandwidth |
| On-chip ECC (encode/decode) | Corrects single-bit errors and detects double-bit errors in real time-no external syndrome logic required |
| Configurable burst order | Interleaved or linear via MODE pin-matches x86 or PowerPC cache controller addressing behavior |
| Separate ADSP/ADSC strobes | Enables concurrent processor and memory controller arbitration without glue logic |
| IEEE 1149.1 JTAG boundary scan | Supports production test and board-level diagnostics; TAP signals available only on FBGA variant |
Applications
| Network Packet Buffering | Telecom Line Card Caching |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G/40G Ethernet switch ASICs where deterministic latency and burst coherency are critical. IC Role / Device Role / Timing Role: Primary flow-through SRAM acting as first-level packet descriptor cache, synchronized to ASIC's 133 MHz reference clock. Use Value: 6.5 ns tCO and 2-1-1-1 burst access enable sub-10 ns per-packet descriptor fetch, reducing switch fabric contention. |
Use Scenario: Real-time buffering of voice-over-IP (VoIP) frame data in carrier-grade media gateways with strict jitter constraints. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE partitioning) serving as jitter buffer and echo cancellation coefficient store. Use Value: On-chip ECC ensures bit-error resilience over 10+ year deployments in temperature-variable central office environments. |
| High-Speed Test Equipment Memory | Radar Signal Processing Buffer |
|
Use Scenario: Pattern memory in automated test equipment (ATE) requiring rapid vector loading and deterministic read-back timing. IC Role / Device Role / Timing Role: Burst-accessed instruction/data memory interfaced directly to FPGA-based sequencer with no wait states. Use Value: Synchronous self-timed write eliminates external write-strobe generation logic, simplifying PCB layout and timing closure. |
Use Scenario: Intermediate storage for FFT coefficients and range-Doppler map data in airborne synthetic aperture radar (SAR) processors. IC Role / Device Role / Timing Role: ECC-protected SRAM buffer between ADC interface and DSP core, operating in extended temperature range (-40°C to +85°C). Use Value: ZZ sleep mode reduces standby power by >90% during inter-frame idle periods without compromising data integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102436BLL-133TQLI | No on-chip ECC; 100-pin TQFP; identical 512K × 36, 133 MHz, 3.3 V core | Lacks SER mitigation-requires external error handling in radiation-prone or long-life systems | Select when cost sensitivity outweighs reliability requirements and ECC is implemented at system level |
| MT48LC32M32B2-75:G | SDR SDRAM (not SRAM); 32M × 32; 7.5 ns CL3; 3.3 V; no burst counter or MODE pin | Higher density but asynchronous refresh, variable latency, and no flow-through behavior | Select only when system can tolerate refresh overhead and non-deterministic access timing |
Compared with IS61WV102436BLL-133TQLI and MT48LC32M32B2-75:G, CY7C1381KV33-133AXI uniquely delivers deterministic 2-1-1-1 burst timing, integrated ECC, and dual-strobe (ADSP/ADSC) arbitration-critical for cache-coherent, low-jitter, mission-critical memory subsystems.
Availability
CY7C1381KV33-133AXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY7C1381KV33-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.
This device belongs to Cypress's legacy synchronous SRAM product line, engineered specifically for zero-wait-state, high-bandwidth interfacing with microprocessors, network ASICs, and DSPs in latency-sensitive systems.
FAQ
What is the function of the MODE pin, and how must it be biased?
The MODE pin selects burst sequence type: HIGH (or floating, due to internal pull-up) enables interleaved burst; LOW (tied to GND) enables linear burst. It is a static strap pin-must remain stable during operation and cannot be toggled dynamically. Incorrect biasing causes invalid burst address generation and data corruption.
Does CY7C1381KV33-133AXI support true dual-port operation?
No-it is a single-port synchronous SRAM with common I/O pins. While CE1/CE2/CE3 allow depth expansion across multiple devices, and ADSP/ADSC provide separate address strobe inputs, the device lacks independent read/write ports or simultaneous access capability. True dual-port operation requires discrete dual-port SRAMs like CY7C1356.
Can VDDQ be operated at 2.5 V while VDD remains at 3.3 V?
Yes-VDDQ is independently supplied and rated for 2.5 V ± 0.2 V or 3.3 V ± 0.3 V. This allows direct interfacing with 2.5 V logic (e.g., older FPGAs) while maintaining 3.3 V core performance. VDDQ must be powered before or simultaneously with VDD; sequencing violations may cause initialization failure.
Is JTAG boundary scan functional on the 100-pin TQFP package?
No-TDO, TDI, TMS, and TCK pins are not bonded out in the 100-pin TQFP package (CY7C1381KV33-133AXI). JTAG is only available on the 165-ball FBGA variant (CY7C1381KV33-133BZI). The TQFP version omits these pins entirely; no trace routing or pull-up/down is required.
CY7C1381KV33-133AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1381KV33-133AXI FAQ
1.How can I place an order for CY7C1381KV33-133AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381KV33-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381KV33-133AXI reliable?
The price and inventory of CY7C1381KV33-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381KV33-133AXI is usually 5 days.
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Once your CY7C1381KV33-133AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381KV33-133AXI?
For technical support, including CY7C1381KV33-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381KV33-133AXI requirements.
6.How does Aetrix verify that CY7C1381KV33-133AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1381KV33-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381KV33-133AXI meets industry standards.
7.What is the process for return or replacement of CY7C1381KV33-133AXI?
All CY7C1381KV33-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381KV33-133AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381KV33-133AXI part is unused and in its original packaging.
Return procedure for CY7C1381KV33-133AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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