Infineon Technologies CY7C1381KV33-133AXIT

Overview

CY7C1381KV33-133AXIT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous flow-through SRAM with on-chip ECC, designed for high-speed microprocessor cache and buffer interfaces. It supports 133 MHz bus operation with 6.5 ns clock-to-output delay, dual VDD/VDDQ supplies (3.3 V core / 2.5 V or 3.3 V I/O), and JEDEC-standard Pb-free 100-pin TQFP packaging. Used in telecom line cards requiring soft-error resilience and burst-mode memory access.

For engineers reviewing the CY7C1381KV33-133AXIT datasheet, CY7C1381KV33-133AXIT pinout, CY7C1381KV33-133AXIT application, or CY7C1381KV33-133AXIT equivalent, key selection criteria include burst sequence mode (interleaved/linear), synchronous write timing with ADSP/ADSC strobes, ECC correction capability, and compatibility with 2.5 V or 3.3 V I/O voltage domains.

Technical Context

This SRAM implements a synchronous, flow-through architecture with a 2-bit internal burst counter that auto-increments addresses on ADV assertion. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, enabling precise timing alignment with high-speed processors.

The device supports two independent burst initiation paths-ADSP for processor-initiated bursts and ADSC for controller-initiated bursts-with priority given to ADSP when both are active. MODE pin statically selects interleaved (HIGH) or linear (LOW) burst addressing, and on-chip ECC encoder/decoder reduces soft error rate without external logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C33128P-133BIN and IS61WV102436BLL-133TQLI, CY7C1381KV33-133AXIT uniquely integrates ECC, eliminating external logic and reducing FIT rate by orders of magnitude - essential for avionics, medical, and telecom infrastructure where data integrity is non-negotiable.

Availability

CY7C1381KV33-133AXIT is available at Aetrix Electronics and suitable for telecom line card buffering, industrial PLC data logging, avionics sensor fusion cache, and medical imaging frame buffer applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1381KV33-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC, and USB solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, ECC-protected memory subsystems in mission-critical embedded systems where timing predictability and data integrity are enforced by regulatory standards.

FAQ

What is the function of the MODE pin on CY7C1381KV33-133AXIT?

The MODE pin is a static configuration input that selects burst address sequencing: HIGH (or floating, due to internal pull-up) enables interleaved burst order, while LOW (tied to GND) selects linear burst order. It must remain stable during operation and is sampled only at power-up or reset; changing it mid-operation causes undefined burst behavior.

Does CY7C1381KV33-133AXIT support 2.5 V I/O operation with a 3.3 V core supply?

Yes - VDD is fixed at 3.3 V for core logic, while VDDQ accepts either 2.5 V or 3.3 V to match the host interface voltage. This dual-supply design allows direct connection to 2.5 V ASICs or FPGAs without level translators, and is explicitly validated in the datasheet's AC switching characteristics tables under both 2.5 V and 3.3 V VDDQ conditions.

How does the ZZ sleep mode affect data retention and power consumption?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention. Core current drops to ≤50 µA (typical), while all registers and memory cells remain powered. The part resumes normal operation within one CLK cycle after ZZ returns LOW, with no initialization delay or data loss - confirmed in the "ZZ Mode Electrical Characteristics" section of the datasheet.

Is JTAG boundary scan supported on the CY7C1381KV33-133AXIT TQFP package?

No - JTAG pins (TCK, TMS, TDI, TDO) are not bonded out on the 100-pin TQFP package. They are available only on the 165-ball FBGA variant (e.g., CY7C1381KV33-133BAXI). The TQFP version omits these pins entirely, as confirmed in the "Pin Definitions" table where TDO/TDI/TMS/TCK are marked "Not available on TQFP packages".