Infineon Technologies CY7C1381KVE33-133AXI

Overview

CY7C1381KVE33-133AXI from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 512K × 36 common I/O, operating at 133 MHz with 6.5 ns clock-to-output delay, 3.3 V core (VDD), and 2.5 V/3.3 V I/O (VDDQ), used in high-speed cache and buffer subsystems of network processors and telecom line cards.

For engineers reviewing the CY7C1381KVE33-133AXI datasheet, CY7C1381KVE33-133AXI pinout, CY7C1381KVE33-133AXI application, or CY7C1381KVE33-133AXI equivalent, key selection factors include burst mode control (interleaved/linear), dual supply voltage support, JTAG boundary scan compliance, and synchronous self-timed write capability for deterministic timing in pipelined memory interfaces.

Technical Context

This SRAM implements a synchronous, edge-triggered interface with all address/data/control inputs registered on the rising edge of CLK. It supports two burst initiation methods-ADSP (processor strobe) and ADSC (controller strobe)-with ADV-driven internal address incrementing during burst sequences.

The device integrates a 2-bit on-chip burst counter, ECC encoder/decoder for single-bit error correction and double-bit error detection, and separate CE1 (active-low), CE2 (active-high), CE3 (active-low) for depth expansion. MODE pin statically selects interleaved or linear burst order, and ZZ enables asynchronous sleep with data retention.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C33128P-133JCIN and IS61WV102432BLL-133TQLI, CY7C1381KVE33-133AXI uniquely integrates ECC encoding/decoding, dual-supply I/O, and configurable burst order in a single JEDEC-standard TQFP - reducing system-level complexity for safety-critical and high-reliability applications.

Availability

CY7C1381KVE33-133AXI is available at Aetrix Electronics and suitable for network infrastructure, industrial control, avionics display, and telecom baseband applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1381KVE33-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's high-performance synchronous SRAM product line, designed specifically for low-latency, ECC-protected memory subsystems in systems demanding deterministic timing and radiation tolerance - such as carrier-grade routers and mission-critical control units.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst address order: HIGH (or floating, due to internal pull-up) enables interleaved burst; LOW (tied to GND) selects linear burst. It is a static strap pin - must be fixed before operation and cannot change dynamically. Incorrect strapping causes misaligned burst reads/writes and data corruption.

Does CY7C1381KVE33-133AXI support JTAG boundary scan?

No - this specific TQFP variant lacks TDO, TDI, TMS, and TCK pins. JTAG is only implemented on the 165-ball FBGA package (e.g., CY7C1381KV33-BZXI). The TQFP pinout omits all JTAG signals, as confirmed in Figures 1 and 2 of the official datasheet (001-97888 Rev. *F).

Can VDDQ be operated at 2.5 V while VDD remains at 3.3 V?

Yes - the device explicitly supports mixed-supply operation: 3.3 V core (VDD) with 2.5 V I/O (VDDQ). This allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining full 133 MHz performance and ECC functionality, as specified in the "Operating Range" and "AC Test Conditions" sections of the datasheet.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with data retention. Core current drops to ≤5 µA (typical), and all outputs go high-impedance. No clock is required, and wake-up is instantaneous upon ZZ return to LOW - no reset or initialization sequence needed, preserving full timing predictability on resume.