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Infineon Technologies CY7C1381KVE33-133AXIT
- Part No.:
- CY7C1381KVE33-133AXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1381KVE33-133AXIT.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,652
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Product details
Overview
CY7C1381KVE33-133AXIT from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 512K × 36, supporting 133 MHz bus operations, 6.5 ns clock-to-output delay, and dual-voltage I/O (2.5 V/3.3 V). It serves as high-speed cache or buffer memory in network packet processors requiring error-resilient, burst-capable data storage.
For engineers reviewing the CY7C1381KVE33-133AXIT datasheet, CY7C1381KVE33-133AXIT pinout, CY7C1381KVE33-133AXIT application, or CY7C1381KVE33-133AXIT equivalent, key selection criteria include burst mode control (interleaved/linear), ZZ sleep mode support, JTAG boundary scan capability, and ECC-enabled soft error mitigation for mission-critical embedded systems.
Technical Context
This SRAM implements synchronous address capture via ADSP/ADSC strobes, with a 2-bit internal burst counter that auto-increments addresses on ADV assertion. All synchronous inputs-including CE1/CE2/CE3, BWx, BWE, GW, and MODE-are registered on the rising edge of CLK.
The device supports both interleaved and linear burst sequences selected by the static MODE pin, and features asynchronous OE and ZZ controls. ECC encoding/decoding operates transparently during read/write cycles, reducing soft error rate without software overhead or external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 133 MHz - enables 7.5 ns cycle time for high-throughput burst transfers |
| Access Time (tCO) | 6.5 ns - defines minimum latency from CLK rise to valid DQ output |
| VDD / VDDQ | 3.3 V core / 2.5 V or 3.3 V I/O - allows interface compatibility with mixed-voltage SoCs |
| ECC Support | On-chip single-bit error correction and double-bit error detection - preserves data integrity without host CPU intervention |
| Burst Mode | User-selectable interleaved or linear via MODE pin - matches processor/cache controller addressing patterns |
| Sleep Mode | Asynchronous ZZ input (active HIGH) - reduces standby current while retaining memory contents |
Pinout & Package
Package: JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, with exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Edge-triggered master timing reference for all registered inputs and burst counter advancement |
| ADSP / ADSC | Address strobe inputs | ADSP prioritized over ADSC; initiates address latching and burst counter load on rising CLK edge |
| ADV | Burst address advance | Asserted LOW on CLK edge to increment internal burst counter for next sequential/interleaved address |
| CE1, CE2, CE3 | Chip enable group | 3-pin decode for depth expansion; CE1 active LOW, CE2 active HIGH, CE3 active LOW - enables multi-SRAM bank selection |
| BWA–BWD, BWE | Byte write control | Four independent byte masks + global enable - permits partial-word writes without read-modify-write cycles |
| DQs / DQP A–D | Data I/O and parity I/O | 36-bit data + 4-bit parity bus; DQP lines mirror DQ functionality with dedicated byte-write pairing (e.g., BWA ↔ DQA/DQPA) |
| MODE | Burst sequence selector | Static strap pin (internal pull-up); LOW = linear, HIGH = interleaved - must be stable during operation |
| ZZ | Asynchronous sleep control | Active HIGH; places core in low-power retention state with full data hold - no clock required |
| OE | Asynchronous output enable | Active LOW; overrides synchronous timing to tristate DQ/DQP outputs immediately - useful for bus arbitration |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through architecture | Eliminates pipeline stalls between consecutive burst reads/writes - sustains 2-1-1-1 access rate at 133 MHz |
| Integrated ECC engine | Hardware-accelerated SEC-DED correction - reduces uncorrectable error probability by >100× vs. non-ECC SRAM in radiation-prone environments |
| Dual-voltage I/O (VDDQ) | Configurable 2.5 V or 3.3 V interface - supports legacy 3.3 V ASICs and modern 2.5 V FPGAs without level shifters |
| JTAG boundary scan (IEEE 1149.1) | Fully compliant TAP controller with TDI/TDO/TMS/TCK - enables in-system testability and interconnect verification on dense PCBs |
| Separate processor/controller strobes | Dedicated ADSP and ADSC inputs - allows coexistence of CPU and DMA/cache controller on shared memory bus without arbitration logic |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs with real-time traffic shaping. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to SerDes MAC controllers via synchronous burst protocol. Use Value: 6.5 ns tCO and 2-1-1-1 access rate ensure zero-cycle wait states during line-rate packet buffering; ECC prevents silent corruption in multi-day uptime deployments. | Use Scenario: Serving as L2 cache for DSP-based voice processing engines in carrier-grade VoIP gateways. IC Role / Device Role / Timing Role: Synchronous flow-through memory mapped to DSP EMIF with ADSP-driven burst reads aligned to instruction fetch windows. Use Value: Interleaved burst mode matches DSP's natural address stride; ZZ sleep mode cuts idle power by 70% during call silence periods. |
| Radar Signal Processing Buffer | Industrial PLC Data Logger |
Use Scenario: Capturing high-resolution ADC samples from phased-array radar receivers before FFT computation. IC Role / Device Role / Timing Role: Burst-write target for DMA engines feeding time-domain sample streams; ECC protects against neutron-induced bit flips in airborne systems. Use Value: On-chip SEC-DED eliminates need for external error-checking logic; 133 MHz bandwidth sustains 500+ MB/s sustained write throughput. | Use Scenario: Logging sensor fusion data (IMU, temperature, pressure) in explosion-proof factory controllers with 15-year field life requirements. IC Role / Device Role / Timing Role: Nonvolatile shadow buffer holding last-known-good state during brownouts; powered by backup capacitor during main supply loss. Use Value: ZZ sleep mode maintains full memory retention at <50 µA; ECC ensures logged safety-critical parameters remain intact across decades of operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C331025B-133BIN | No on-chip ECC; 512K × 36, 133 MHz, 3.3 V only (no VDDQ flexibility) | Suitable for cost-sensitive, non-safety-critical buffering where SER is mitigated at system level | Select when ECC is handled externally or unnecessary; lower BOM cost but requires additional error-handling firmware |
| IS61WV102432BLL-133TQLI | 1M × 32 organization; no MODE-controlled burst sequencing; no ZZ sleep mode | Better suited for general-purpose FPGA co-processor memory where burst pattern is fixed and power gating is managed externally | Choose when wider data bus (32-bit) is preferred over ECC and flexible burst control; lacks integrated low-power retention |
Compared with AS7C331025B-133BIN and IS61WV102432BLL-133TQLI, CY7C1381KVE33-133AXIT uniquely combines ECC, dual-voltage I/O, programmable burst order, and hardware sleep-making it optimal for safety-aware, power-constrained, and mixed-voltage embedded systems where data integrity and timing predictability are non-negotiable.
Availability
CY7C1381KVE33-133AXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, radar signal processing, and industrial PLC data logging requiring stable component supply and long-term manufacturability.
Supply support for CY7C1381KVE33-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications infrastructure.
This device belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for glueless interfacing with microprocessors, network ASICs, and DSPs demanding deterministic timing, ECC resilience, and low-latency burst access.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst address sequence: HIGH (or floating, due to internal pull-up) enables interleaved bursts; LOW (tied to GND) enables linear bursts. It is a static strap pin-configuration must be fixed before device operation begins and cannot be changed dynamically during runtime. Incorrect or floating MODE states may cause unpredictable burst addressing behavior.
Does CY7C1381KVE33-133AXIT support both 2.5 V and 3.3 V I/O simultaneously?
No-it supports either 2.5 V or 3.3 V I/O voltage, selected by the VDDQ supply rail. VDDQ must be set to one value across all operations; mixing voltages on the same device is not permitted. The I/O pins are JESD8-5-compatible and tolerate 3.3 V signaling even when VDDQ = 2.5 V, but output drive strength and timing specs are specified per VDDQ setting.
How does the ZZ sleep mode affect data retention and wake-up timing?
In ZZ mode (pin driven HIGH), the SRAM enters a non-time-critical retention state with core clocks gated and I/O drivers disabled. Data is retained indefinitely as long as VDD ≥ 2.7 V and ambient temperature remains within operating range (–40°C to +85°C). Wake-up is asynchronous: asserting ZZ LOW restores full operation within one CLK cycle-no reset sequence or initialization delay is required.
Is JTAG boundary scan available on the 100-pin TQFP package?
No. JTAG signals (TCK, TMS, TDI, TDO) are only present on the 165-ball FBGA package variant. The 100-pin TQFP version (including CY7C1381KVE33-133AXIT) omits these pins entirely-boundary scan testing is not supported in this package. Designers requiring JTAG must select the FBGA variant or implement alternative test strategies.
CY7C1381KVE33-133AXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1381KVE33-133AXIT FAQ
1.How can I place an order for CY7C1381KVE33-133AXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381KVE33-133AXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381KVE33-133AXIT reliable?
The price and inventory of CY7C1381KVE33-133AXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381KVE33-133AXIT is usually 5 days.
3.What payment methods are accepted for CY7C1381KVE33-133AXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381KVE33-133AXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1381KVE33-133AXIT?
CY7C1381KVE33-133AXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1381KVE33-133AXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381KVE33-133AXIT?
For technical support, including CY7C1381KVE33-133AXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381KVE33-133AXIT requirements.
6.How does Aetrix verify that CY7C1381KVE33-133AXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1381KVE33-133AXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381KVE33-133AXIT meets industry standards.
7.What is the process for return or replacement of CY7C1381KVE33-133AXIT?
All CY7C1381KVE33-133AXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381KVE33-133AXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381KVE33-133AXIT part is unused and in its original packaging.
Return procedure for CY7C1381KVE33-133AXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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