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Infineon Technologies CY7C1381KVE33-133AXM
- Part No.:
- CY7C1381KVE33-133AXM
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1381KVE33-133AXM.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,240
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Product details
Overview
CY7C1381KVE33 from Cypress Semiconductor is a military-grade 18-Mbit (512K × 36) synchronous flow-through SRAM with on-chip ECC, designed for high-speed secondary cache in radiation-tolerant embedded systems. It supports 133 MHz bus operation with 6.5 ns clock-to-output delay, dual VDD/VDDQ supplies (3.3 V core / 2.5–3.3 V I/O), and operates across –55 °C to +125 °C.
For engineers reviewing the CY7C1381KVE33 datasheet, CY7C1381KVE33 pinout, CY7C1381KVE33 application, or CY7C1381KVE33 equivalent, key selection factors include burst mode configurability (linear/interleaved), synchronous self-timed write, asynchronous OE/ZZ control, JEDEC-compliant 100-pin TQFP packaging, and ECC-enabled soft error resilience in harsh environments.
Technical Context
The CY7C1381KVE33 implements a synchronous flow-through architecture with a 2-bit wraparound burst counter fed by A[1:0], enabling four-word bursts initiated via ADSP or ADSC strobes. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK.
Burst order is statically selected by the MODE pin (interleaved when HIGH/floating, linear when LOW), while address advancement is controlled by ADV. ECC encoding/decoding occurs on-chip to detect and correct single-bit errors, reducing SER without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 bits), supporting full-word parallel access for cache line fills. |
| Max Clock Frequency | 133 MHz - enables 1.33 Gbps sustained burst throughput with 2-1-1-1 access pattern. |
| Access Time (tCDV) | 6.5 ns - defines minimum clock-to-valid-output latency for timing-critical cache interfaces. |
| VDD / VDDQ | 3.3 V core / 2.5 V or 3.3 V I/O - allows interoperability with both LVTTL and SSTL-2 logic families. |
| Operating Temperature | –55 °C to +125 °C - qualified for aerospace, defense, and downhole industrial deployments. |
| ECC Function | On-chip SEC-DED - detects and corrects single-bit errors per 36-bit word, preserving data integrity without software overhead. |
| Package | 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard lead-free - compatible with automated SMT assembly and thermal cycling requirements. |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Synchronous Address Inputs | Sampled on CLK rise when ADSP/ADSC active; A[1:0] load 2-bit burst counter for automatic address increment. |
| DQ[0:35], DQP[0:3] | Bidirectional Data I/O (36 data + 4 parity) | Common I/O pins with direction controlled by OE; DQP lines mirror DQ byte groups for ECC parity generation. |
| CE1, CE2, CE3 | Synchronous Chip Enables | Three-level decode (CE1 active LOW, CE2 active HIGH, CE3 active LOW) enables multi-bank memory expansion without glue logic. |
| ADSP / ADSC | Address Strobe Inputs | ADSP prioritized over ADSC; both capture addresses on CLK rise and trigger burst counter initialization. |
| ADV | Synchronous Address Advance | Asserted on CLK rise to increment burst counter - enables programmable burst depth and interleaving control. |
| MODE | Static Burst Order Select | Pull-up internal; LOW = linear burst (00→01→10→11), HIGH/floating = interleaved (00→01→10→11 → 00→11→10→01). |
| ZZ | Asynchronous Sleep Enable | Active HIGH; places device in low-power state with data retention - exit requires tZZREC (2 CLK cycles) before re-enabling CE/ADSP. |
| OE | Asynchronous Output Enable | Active LOW; overrides synchronous timing to tristate outputs immediately - critical for bus sharing and read-modify-write sequences. |
Key Features
| Feature | Design Value |
|---|---|
| Synchronous self-timed write | Eliminates external write pulse generation - internal timing ensures reliable data latching across temperature and voltage extremes. |
| User-selectable burst sequence | Hardware-mode pin (MODE) configures linear or interleaved addressing without firmware intervention - matches CPU/cache controller expectations. |
| Separate processor/controller strobes | Dedicated ADSP and ADSC inputs allow concurrent interface to CPU and memory controller - avoids arbitration logic in dual-bus systems. |
| On-chip ECC (SEC-DED) | Corrects single-bit errors and detects double-bit errors per 36-bit word - reduces uncorrectable error rate (UER) in neutron-rich environments. |
| Three-chip-enable bank decoding | CE1/CE2/CE3 combination supports up to eight independent memory banks in stacked or interleaved configurations - simplifies large-memory system design. |
Applications
| Avionics Flight Control Systems | Military Radar Signal Processors |
|---|---|
|
Use Scenario: Real-time processing of inertial measurement unit (IMU) and GPS data in fly-by-wire flight computers requiring deterministic latency and radiation tolerance. IC Role / Device Role / Timing Role: Secondary cache buffer between FPGA-based signal processor and high-speed ADC/DAC interfaces, operating at 133 MHz with sub-7 ns output timing. Use Value: ECC protection ensures uninterrupted execution during cosmic ray exposure; military temp range guarantees reliability across stratospheric thermal cycles. |
Use Scenario: High-throughput buffering of pulse-Doppler radar returns in airborne early warning (AEW) platforms with strict SWaP-C constraints. IC Role / Device Role / Timing Role: Flow-through SRAM staging raw IQ samples prior to FFT processing - leverages 2-1-1-1 burst access to match pipeline depth. Use Value: Interleaved burst mode aligns with radar processor's memory access pattern; ZZ sleep mode reduces standby power during inter-pulse periods. |
| Downhole Oilfield Telemetry | Spacecraft Onboard Computers |
|
Use Scenario: Logging-while-drilling (LWD) tools transmitting formation evaluation data under extreme temperature gradients (>150 °C ambient, –55 °C to +125 °C operational range required). IC Role / Device Role / Timing Role: Nonvolatile cache for sensor fusion algorithms running on radiation-hardened microcontrollers - retains integrity during power brownouts. Use Value: Dual-supply VDD/VDDQ enables seamless integration with mixed-voltage sensor front-ends; TQFP package withstands mechanical shock and thermal stress. |
Use Scenario: Attitude determination and control system (ADCS) in low-Earth orbit satellites where single-event upsets (SEUs) threaten mission-critical memory. IC Role / Device Role / Timing Role: Error-resilient instruction/data cache for LEON3 SPARC processors - ECC correction prevents silent data corruption in long-duration missions. Use Value: On-chip SEC-DED eliminates need for external error-handling logic; military temp rating supports passive thermal management in vacuum environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L133PF | 16-Mbit (512K × 32), no on-chip ECC; requires external parity logic; 133 MHz, 7 ns tCDV. | Lacks integrated error correction - unsuitable for radiation-intensive environments without added complexity. | Select only if ECC is handled externally and 32-bit bus width suffices. |
| ISSI IS61WV102436BLL-133TQLI | 36-Mbit (1M × 36), commercial temp only (0 °C to +70 °C); no ECC; 133 MHz, 7 ns tCDV. | Not qualified for military temperature range or soft error mitigation - limited to benign terrestrial applications. | Consider only for cost-sensitive, non-radiation-hardened designs with extended memory depth needs. |
Compared with IDT72V2115L133PF and IS61WV102436BLL-133TQLI, the CY7C1381KVE33 uniquely integrates ECC, supports full military temperature operation, and delivers tighter 6.5 ns access time - making it the sole option for high-reliability, radiation-aware cache subsystems.
Availability
CY7C1381KVE33 is available at Aetrix Electronics and suitable for avionics flight control systems, military radar signal processors, downhole oilfield telemetry, and spacecraft onboard computers requiring stable component supply across extended lifecycle programs.
Supply support for CY7C1381KVE33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a leader in high-reliability memory and programmable solutions for aerospace, defense, and industrial markets.
The CY7C1381KVE33 belongs to Cypress's military-grade synchronous SRAM product line, engineered specifically for radiation-tolerant cache and buffer applications in safety-critical real-time systems.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst order: HIGH or floating enables interleaved burst (e.g., 00→01→10→11), while LOW (tied to GND) enables linear burst (00→01→10→11). It is a strap pin with internal pull-up and must remain static during operation - dynamic switching is not supported and may cause undefined burst behavior.
How does the ZZ sleep mode interact with ongoing memory accesses?
Asserting ZZ HIGH places the device in sleep mode after two clock cycles, but pending accesses initiated before ZZ assertion are not completed or guaranteed. The device must be fully deselected (CE1/CE2/CE3 inactive) before entering ZZ mode, and requires tZZREC (≥2 CLK cycles) after ZZ returns LOW before resuming valid operations.
Can the CY7C1381KVE33 operate with mixed VDDQ voltages across different banks?
No - VDDQ is a single I/O supply pin shared across all DQ and DQP lines. While the datasheet permits either 2.5 V or 3.3 V, the voltage must be uniform across the entire device; mixing voltages on the same part violates JEDEC compliance and risks I/O contention or latch-up.
Is the ECC capability user-configurable or always active?
ECC is always active and transparent - no enable/disable control exists. Every 36-bit word written includes 4 parity bits generated on-chip; every read performs SEC-DED checking and correction automatically. There is no bypass mode, and ECC cannot be disabled via pins or commands.
CY7C1381KVE33-133AXM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -55°C ~ 125°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1381KVE33-133AXM FAQ
1.How can I place an order for CY7C1381KVE33-133AXM through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381KVE33-133AXM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381KVE33-133AXM reliable?
The price and inventory of CY7C1381KVE33-133AXM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381KVE33-133AXM is usually 5 days.
3.What payment methods are accepted for CY7C1381KVE33-133AXM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381KVE33-133AXM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1381KVE33-133AXM?
CY7C1381KVE33-133AXM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1381KVE33-133AXM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381KVE33-133AXM?
For technical support, including CY7C1381KVE33-133AXM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381KVE33-133AXM requirements.
6.How does Aetrix verify that CY7C1381KVE33-133AXM is sourced from the original manufacturer or authorized distributors?
All CY7C1381KVE33-133AXM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381KVE33-133AXM meets industry standards.
7.What is the process for return or replacement of CY7C1381KVE33-133AXM?
All CY7C1381KVE33-133AXM units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381KVE33-133AXM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381KVE33-133AXM part is unused and in its original packaging.
Return procedure for CY7C1381KVE33-133AXM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1381KVE33-133AXM Tags
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