Infineon Technologies CY7C1382DV33-167BZI

Overview

CY7C1382DV33-167BZI from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM with 1 M × 18 organization, operating at 167 MHz (t_CO = 3.4 ns), supporting burst-mode cache interfacing in high-performance embedded and networking systems. It features registered I/O, dual supply (3.3 V core / 2.5 V or 3.3 V I/O), IEEE 1149.1 JTAG boundary scan, and ZZ sleep mode.

For engineers reviewing the CY7C1382DV33-167BZI datasheet, CY7C1382DV33-167BZI pinout, CY7C1382DV33-167BZI application, or CY7C1382DV33-167BZI equivalent, this page delivers verified timing parameters, FBGA-165 package mapping, burst control logic behavior, and validated alternatives for secondary cache and memory controller designs requiring deterministic 3.4 ns clock-to-output latency.

Technical Context

The device implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC inputs to generate internal addresses for linear or interleaved (Pentium®-compatible) burst sequences. All address, data, and control inputs-except OE and ZZ-are registered on the rising edge of CLK.

It supports byte-selectable writes via BWA–BWD and BWE, global write via GW, and asynchronous output enable (OE) with tri-state control. The 165-ball FBGA package includes dedicated VDDQ/VSSQ rails for I/O power integrity and separate VDD/VSS for core logic, enabling mixed-voltage system integration.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, JEDEC-standard Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IS61WV102418BLL-167BLI and MT48LC16M16A2P-6A:G, CY7C1382DV33-167BZI uniquely delivers deterministic 3.4 ns access, dual-supply I/O flexibility, and hardware-selectable burst modes-making it irreplaceable in hard real-time cache and buffer applications where timing predictability is non-negotiable.

Availability

CY7C1382DV33-167BZI is available at Aetrix Electronics and suitable for industrial motion control, network packet processing, automated test equipment, and embedded processor cache applications requiring stable component supply, long-lifecycle support, and guaranteed Pb-free FBGA packaging.

Supply support for CY7C1382DV33-167BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1382DV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency cache and buffer applications in systems demanding sub-4 ns access times and robust burst-mode reliability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence type: tied to GND for linear burst, or to VDD/floating for Intel Pentium®-interleaved burst. It is a static strap pin-must be set before device initialization and held stable during operation. Internal pull-up ensures default interleaved mode if left unconnected. Incorrect or dynamic switching causes undefined burst address generation and data corruption.

Can CY7C1382DV33-167BZI operate with 2.5 V I/O while maintaining 3.3 V core supply?

Yes. VDDQ accepts 2.5 V ± 0.2 V independently of VDD (3.3 V ± 0.3 V). This allows direct interfacing with 2.5 V logic families (e.g., SSTL-2) while preserving core timing margins. I/O pins are JEDEC JESD8-5 compliant, and VDDQ/VSSQ rails must be decoupled separately from VDD/VSS to prevent cross-coupling noise.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep with full data retention and reduced current draw (≤70 mA standby). Wake-up is asynchronous: data becomes valid within t_ZZ = 25 ns after ZZ returns LOW, with no clock cycles required. Internal pull-down ensures safe default operation if ZZ is left unconnected.

Is JTAG boundary scan supported on the 165-ball FBGA package?

Yes. TCK, TMS, TDI, and TDO pins are assigned to balls A1, B1, C1, and D1 respectively in the 165-ball FBGA layout. JTAG functionality is fully IEEE 1149.1 compliant and usable for production testing and debug. Unlike the TQFP variant, the FBGA package exposes all four JTAG signals-no pin omission or functional disablement.