Infineon Technologies CY7C1382DV33-200BZI

Overview

CY7C1382DV33-200BZI from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM with 1 M × 18 organization, 200 MHz bus operation support, 3.3 V core supply, 2.5/3.3 V I/O supply, and 3 ns clock-to-output delay. It implements registered address/data paths, synchronous self-timed write, and user-selectable Intel Pentium®-compatible interleaved or linear burst sequences for high-speed cache applications in embedded controllers and networking processors.

For engineers reviewing the CY7C1382DV33-200BZI datasheet, CY7C1382DV33-200BZI pinout, CY7C1382DV33-200BZI application, or CY7C1382DV33-200BZI equivalent, key selection criteria include burst mode configuration (MODE pin), dual-address strobe support (ADSP/ADSC), byte-write granularity (BWA–BWD + BWE), JTAG boundary scan compliance (IEEE 1149.1), and FBGA-165 package thermal and routing constraints.

Technical Context

The device uses a two-bit synchronous wraparound burst counter driven by ADV, with address latching triggered on CLK's rising edge when ADSP or ADSC is active. All synchronous inputs-including A[1:0], CE1–CE3, BWE, GW, and BWX-are registered, enabling deterministic 3-1-1-1 access timing at 200 MHz.

Asynchronous controls OE and ZZ operate independently of CLK: OE enables tri-state output control during read cycles, while ZZ places the device in low-power sleep with data retention. The memory array supports byte-wide writes (1–4 bytes) via BWX/BWE and global write via GW, all synchronized to CLK edges.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, JEDEC-standard Pb-free, thermal pad exposed on underside for enhanced heat dissipation in high-throughput cache modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102418BLL-200BLI, the CY7C1382DV33-200BZI uniquely integrates burst sequencing, dual-address strobes, JTAG testability, and ZZ sleep-making it the only option supporting deterministic 200 MHz cache operation in safety-critical or multi-protocol embedded systems.

Availability

CY7C1382DV33-200BZI is available at Aetrix Electronics and suitable for networking packet buffering, industrial PLC cache memory, embedded DSP code caching, and avionics data acquisition requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1382DV33-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C138x DV33 product line was designed specifically for high-bandwidth, low-latency secondary cache applications in microprocessor- and DSP-based systems requiring deterministic burst access and JEDEC-compliant I/O interoperability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin statically selects burst sequence: tied to GND for linear burst, or to VDD/floating for Intel Pentium®-compatible interleaved burst. It is sampled only at power-up or reset and must remain static during operation. Internal pull-up ensures safe default to interleaved mode if left unconnected, matching common x86 processor requirements.

Can CY7C1382DV33-200BZI operate with a 2.5 V I/O supply while maintaining 200 MHz performance?

Yes - the device supports VDDQ = 2.5 V or 3.3 V while sustaining full 200 MHz operation and 3 ns tCO. I/O voltage selection is independent of core VDD (3.3 V), allowing direct interface to 2.5 V FPGAs or ASICs without level shifters, with verified AC timing across both VDDQ conditions per datasheet Table 1.

How does the ZZ sleep mode affect timing and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep with full data retention and reduced current draw (≤70 mA). All synchronous inputs are ignored except CLK, and outputs go high-impedance. Exit to active mode requires ZZ LOW for ≥tZZH (10 ns min) before first valid CLK edge; no refresh or reinitialization is needed.

Is JTAG boundary scan supported on the CY7C1382DV33-200BZI in FBGA-165 package?

Yes - TCK, TMS, TDI, and TDO pins are fully implemented and functional in the 165-ball FBGA package (pin locations confirmed in Figure 2, pages 4–5 of datasheet 001-74445 Rev. *D). JTAG operates at 3.3 V or 2.5 V VDDQ and supports IEEE 1149.1 mandatory instructions for interconnect testing and device identification.