Infineon Technologies CY7C1382KV33-167AXC
- Part No.:
- CY7C1382KV33-167AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1382KV33-167AXC.pdf
- Description:
- IC SRAM 18MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:2,348
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1382KV33-167AXC from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM organized as 1M × 18, operating at 167 MHz with 3.3 V core and 2.5/3.3 V I/O supplies. It features registered inputs/outputs, synchronous self-timed write, asynchronous output enable, and ZZ sleep mode. Used in high-speed secondary cache subsystems for RISC processors requiring burst-mode memory access.
For engineers reviewing the CY7C1382KV33-167AXC datasheet, CY7C1382KV33-167AXC pinout, CY7C1382KV33-167AXC application, or CY7C1382KV33-167AXC equivalent, key selection criteria include burst address sequencing (linear/interleaved), byte-write control granularity (BWA–BWD + BWE), three-chip-enable depth expansion, and TQFP-100 package compatibility with JEDEC-standard I/O voltage flexibility.
Technical Context
This SRAM implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC inputs to generate sequential addresses during burst reads/writes. All synchronous signals-including A[1:0], CE1/CE2/CE3, BWX, BWE, GW, and CLK-are registered on the rising edge of CLK.
It supports dual-burst initiation modes: processor-initiated (ADSP) and controller-initiated (ADSC), with priority given to ADSP when both are active. Output data is registered and clocked out with tCO = 3.4 ns (max), enabling deterministic timing in synchronous bus architectures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1,048,576 × 18 organization) |
| Max Clock Frequency | 167 MHz - defines maximum sustained burst throughput and interface timing margin |
| Access Time (tCO) | 3.4 ns - maximum clock-to-output delay for synchronous read data valid timing |
| Core Supply Voltage | 3.3 V ± 0.3 V - powers internal logic and memory array; requires dedicated low-noise regulation |
| I/O Supply Voltage | 2.5 V or 3.3 V - selectable for interfacing with mixed-voltage SoCs or FPGAs |
| Burst Mode Control | MODE pin strapping - selects linear vs. interleaved burst addressing for processor/cache alignment |
| Write Granularity | Byte-selectable via BWA–BWD + BWE - enables 1–4 byte writes without masking logic |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-compliant, with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Synchronous clock input | Rising-edge-triggered master timing reference for all registered inputs/outputs and burst counter |
| ADSP / ADSC | Address strobe inputs | Initiate burst sequence; ADSP has priority over ADSC for address capture and counter load |
| ADV | Address advance control | Active-low signal that increments internal two-bit burst counter on next CLK rise |
| CE1, CE2, CE3 | Chip enable inputs | Three-level synchronous enable hierarchy for depth expansion across multiple SRAM banks |
| BWA–BWD, BWE | Byte write controls | Four independent byte masks qualified by BWE; enable partial-word writes without external gating |
| GW | Global write enable | Overrides all byte write selects to force full 18-bit write on rising CLK edge |
| OE | Asynchronous output enable | Tri-states DQ/DQP pins immediately when HIGH; masked only during first read cycle after deselect |
| ZZ | Asynchronous sleep control | Active-HIGH entry into low-power retention mode; internal pull-down allows floating for normal operation |
| MODE | Burst order configuration | Static strap pin: GND = linear burst, VDD/floating = interleaved burst; must remain stable during operation |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined synchronous interface | Registered address/data/control paths eliminate setup/hold violations on high-speed buses up to 167 MHz |
| Configurable burst addressing | MODE pin selects linear or interleaved sequences to match CPU cache line fetch patterns |
| Flexible I/O voltage support | Separate VDDQ rail (2.5 V or 3.3 V) enables direct connection to FPGA I/O banks or ASIC cores |
| Depth-expansion chip enables | CE1 (active-L), CE2 (active-H), CE3 (active-L) allow stacking multiple devices without external decode logic |
| JTAG boundary scan | IEEE 1149.1-compliant test access port (TAP) for board-level interconnect verification (FBGA only) |
Applications
| Processor Cache Interface | Network Packet Buffer |
|---|---|
Use Scenario: High-performance RISC microprocessor (e.g., PowerPC or ARM Cortex-A series) requiring low-latency L2 cache with burst-line fill capability. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM acting as secondary cache memory with deterministic 3.4 ns tCO and 167 MHz burst bandwidth. Use Value: Enables full-cache-line burst reads matching CPU prefetch width, reducing average memory latency by eliminating per-word address overhead. | Use Scenario: Gigabit Ethernet switch ASIC buffering incoming/outgoing packet headers and metadata in real time. IC Role / Device Role / Timing Role: Burst-accessible buffer memory supporting parallel header parsing and forwarding decision pipelines. Use Value: Synchronous self-timed write and registered outputs ensure reliable data capture at line rate without external timing glue logic. |
| Industrial Motion Controller | Test Equipment Pattern Memory |
Use Scenario: Real-time servo drive controller executing multi-axis trajectory interpolation with tight jitter constraints. IC Role / Device Role / Timing Role: Deterministic-access memory storing motion profile segments and interpolated position tables. Use Value: ZZ sleep mode reduces idle power while preserving data integrity between motion cycles, extending thermal headroom. | Use Scenario: Automated test equipment (ATE) generating high-speed digital stimulus patterns synchronized to system clock. IC Role / Device Role / Timing Role: Programmable pattern store delivering deterministic 18-bit parallel vectors at 167 MHz with zero-cycle deselection. Use Value: Single-cycle chip deselect and asynchronous OE allow rapid pattern switching between test phases without bus contention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102418BLL-167BLI | 18-Mbit (1M × 18), 167 MHz, 3.3 V core/I/O, no ZZ sleep or JTAG, different pinout | Lacks sleep mode and burst-mode flexibility; simpler interface but less power-aware | Preferred where lowest cost and minimal feature set suffice; requires redesign for CE/ADV/BW pin mapping |
| MT55LCS018A-167B1 | 18-Mbit (1M × 18), 167 MHz, 3.3 V core/I/O, supports linear burst only, no MODE pin | No interleaved burst option; lacks ADSC/ADSP dual-strobe architecture | Appropriate for fixed-architecture systems using linear burst only; not suitable for mixed-processor environments |
Compared with IS61WV102418BLL-167BLI and MT55LCS018A-167B1, CY7C1382KV33-167AXC provides unique configurability in burst ordering, dual-address-strobe initiation, and low-power ZZ mode-critical for adaptive cache and real-time control designs.
Availability
CY7C1382KV33-167AXC is available at Aetrix Electronics and suitable for processor cache interfaces, network packet buffers, industrial motion controllers, and ATE pattern memory applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1382KV33-167AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.
The CY7C138xKV33 product line was designed specifically for high-bandwidth, low-latency synchronous cache and buffer applications in networking, computing, and industrial control systems requiring deterministic burst access and flexible voltage operation.
FAQ
What is the function of the MODE pin, and how must it be configured?
The MODE pin selects burst address sequence: tied to GND for linear burst, or to VDD/floating for interleaved burst. It is a static strap pin-must remain stable during operation and cannot be toggled dynamically. Internal pull-up ensures safe default behavior if left unconnected.
Does CY7C1382KV33-167AXC support both 2.5 V and 3.3 V I/O simultaneously?
No. VDDQ must be set to either 2.5 V or 3.3 V-not both-and must match the voltage level of the connected controller or FPGA I/O bank. The device does not support mixed-voltage I/O on a single interface; VDDQ is a single-supply rail for all DQ/DQP pins.
How does the ZZ sleep mode affect data retention and wake-up timing?
In ZZ mode (pin HIGH), the device enters a non-time-critical sleep state with full data retention and reduced current draw (~20 µA typical). Wake-up occurs synchronously on the next rising CLK edge after ZZ returns LOW; no additional stabilization delay is required before issuing commands.
Can ADSP and ADSC be used concurrently, and what happens if both are asserted?
ADSP and ADSC are mutually exclusive: when both are asserted LOW, only ADSP is recognized and processed. ADSC is ignored in that condition. This prioritization ensures deterministic address capture in systems where both processor and controller may attempt burst initiation.
CY7C1382KV33-167AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1382KV33-167AXC FAQ
1.How can I place an order for CY7C1382KV33-167AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1382KV33-167AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1382KV33-167AXC reliable?
The price and inventory of CY7C1382KV33-167AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1382KV33-167AXC is usually 5 days.
3.What payment methods are accepted for CY7C1382KV33-167AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1382KV33-167AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1382KV33-167AXC?
CY7C1382KV33-167AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1382KV33-167AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1382KV33-167AXC?
For technical support, including CY7C1382KV33-167AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1382KV33-167AXC requirements.
6.How does Aetrix verify that CY7C1382KV33-167AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1382KV33-167AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1382KV33-167AXC meets industry standards.
7.What is the process for return or replacement of CY7C1382KV33-167AXC?
All CY7C1382KV33-167AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1382KV33-167AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1382KV33-167AXC part is unused and in its original packaging.
Return procedure for CY7C1382KV33-167AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1382KV33-167AXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

