Infineon Technologies CY7C1383D-133AXC

Overview

CY7C1383D-133AXC from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous flow-through SRAM with 3.3 V core supply, 2.5 V/3.3 V I/O supply, 133 MHz bus operation, 6.5 ns clock-to-output delay, and JEDEC-standard 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in embedded controllers interfacing with Pentium-class processors.

For engineers reviewing the CY7C1383D-133AXC datasheet, CY7C1383D-133AXC pinout, CY7C1383D-133AXC application, or CY7C1383D-133AXC equivalent, key selection criteria include burst mode support (interleaved/linear), synchronous self-timed write timing, ZZ sleep mode behavior, and dual-voltage I/O compatibility for mixed-signal system integration.

Technical Context

The device implements a 2-bit on-chip burst counter that captures A[1:0] at the first clock edge of a burst and auto-increments address for subsequent cycles. All synchronous inputs-including ADSP, ADSC, ADV, CE1–CE3, BWx, BWE, GW, and MODE-are registered on the rising edge of CLK.

Asynchronous OE and ZZ control output enable and low-power sleep independently of clock timing. The memory array supports both processor-initiated (ADSP) and controller-initiated (ADSC) burst sequences, with address advancement governed by ADV assertion and MODE pin selection (HIGH = interleaved, LOW = linear).

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102418BLL-133TQLI and AS7C31026B-133BIN, CY7C1383D-133AXC uniquely combines dual-voltage I/O, programmable burst sequencing, and asynchronous sleep-critical for legacy x86-compatible embedded systems requiring both performance and power control.

Availability

CY7C1383D-133AXC is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data caching, and medical imaging frame storage requiring stable component supply across long-lifecycle embedded programs.

Supply support for CY7C1383D-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.

CY7C1383D belongs to the Flow-Through SRAM product line, engineered specifically to replace asynchronous SRAM in Pentium-era CPU subsystems while preserving timing compatibility and minimizing glue logic.

FAQ

What is the correct biasing requirement for the ZZ pin on CY7C1383D-133AXC?

The ZZ pin (Pin 64) must be externally connected to ground for normal operation, as specified in the device errata. Although the pin has an internal pull-down, the datasheet mandates a hard GND tie to ensure reliable exit from sleep mode and prevent metastability during power-up sequencing. Leaving it floating or pulling it HIGH will force the device into sleep regardless of other control signals.

Can CY7C1383D-133AXC operate with 2.5 V VDDQ while using 3.3 V VDD?

Yes - the device is explicitly designed for 3.3 V core (VDD) and independent 2.5 V or 3.3 V I/O (VDDQ). This allows direct interfacing with 2.5 V FPGAs or ASICs while maintaining internal 3.3 V logic robustness. VDDQ must be stable before VDD during power-up, and both supplies must remain within ±5% tolerance during operation per AC switching specifications.

How does burst addressing work when MODE = HIGH versus MODE = LOW?

When MODE = HIGH, the device executes Intel Pentium-style interleaved bursts: for a starting address A, it accesses A, A+2, A+4, A+6, then A+1, A+3, A+5, A+7. When MODE = LOW, it performs linear bursts: A, A+1, A+2, A+3, etc. The 2-bit burst counter increments based on ADV assertion and uses A[1:0] as the seed; this mapping is fixed per MODE state and cannot be altered mid-burst.

Is JTAG boundary scan functional on CY7C1383D-133AXC for production testing?

No - per documented errata, JTAG functionality is not guaranteed on this device. Production testing must be performed in BYPASS mode only. The TAP controller may behave unpredictably during active scan operations, and boundary scan register integrity cannot be assured. Functional verification should rely on standard read/write cycling and AC parametric tests instead of JTAG-based structural test.