Infineon Technologies CY7C1383D-133AXIT

Overview

CY7C1383D-133AXIT from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous flow-through SRAM designed for high-speed secondary cache in Pentium®-compatible systems. It supports 133 MHz bus operations with 6.5 ns clock-to-output delay, dual VDD/VDDQ supplies (3.3V core / 2.5V or 3.3V I/O), and user-selectable linear or interleaved burst sequences via the MODE pin.

For engineers reviewing the CY7C1383D-133AXIT datasheet, CY7C1383D-133AXIT pinout, CY7C1383D-133AXIT application, or CY7C1383D-133AXIT equivalent, key selection criteria include burst timing control (ADSP/ADSC/ADV), synchronous self-timed write capability, JEDEC-standard 100-pin TQFP packaging, and support for 2.5V/3.3V I/O interface voltage flexibility.

Technical Context

This SRAM implements a synchronous, flow-through architecture with a 2-bit on-chip wraparound burst counter that captures A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst reads/writes. All address, data, and control inputs (CE1/CE2/CE3, BWx, BWE, GW, ADSP, ADSC, ADV, MODE) are registered on the rising edge of CLK.

It features asynchronous OE and ZZ pins for output enable and non-time-critical sleep mode, respectively, while maintaining data integrity. The device supports four-byte-wide writes via byte write enables (BWA–BWD) qualified by BWE, plus global write (GW) that overrides all byte controls to write all 18-bit data simultaneously.

Key Specifications

Pinout & Package

Package: JEDEC-standard Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 14 mm, 0.5 mm pitch, with exposed thermal pad (not electrically connected). Pin 1 marked by corner notch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102418BLL-133BLI and MT55LSD256K36P-133:G, CY7C1383D-133AXIT uniquely combines 2.5V/3.3V I/O support, hardware-selectable burst modes, and low-power ZZ sleep - making it optimal for upgrade paths in legacy Pentium®-based systems requiring voltage scalability and power-aware operation.

Availability

CY7C1383D-133AXIT is available at Aetrix Electronics and suitable for industrial control computers, network switching hardware, and real-time DSP subsystems requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.

Supply support for CY7C1383D-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC® programmable systems-on-chip, and USB/USB-C solutions.

CY7C1383D belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-mode cache and buffer applications in x86 and RISC-based computing platforms.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin selects burst sequence type: tied to VDD (or left floating, due to internal pull-up) enables Intel® Pentium®-compatible interleaved burst; tied to GND enables linear burst. It is a static strap pin - must remain stable during operation and cannot be toggled dynamically. Incorrect strapping causes misaligned burst addresses and data corruption.

Can CY7C1383D-133AXIT operate with only 2.5V I/O supply and 3.3V core?

Yes - VDDQ may be independently supplied at 2.5V while VDD remains at 3.3V. This configuration is fully supported per datasheet Section "DC Electrical Characteristics" and enables direct interfacing with 2.5V CPU buses without level shifters. VDDQ tolerance is 2.3V–3.6V; operation outside this range risks I/O damage or functional failure.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is driven HIGH, the device enters non-time-critical sleep: core logic halts, clocks are ignored, and standby current drops to ≤70 mA (typical). Data is retained indefinitely. Exit requires ZZ return to LOW followed by one valid CLK cycle before resuming operation - no reset or initialization sequence needed.

Are CE2 and CE3 required for basic single-bank operation?

No - CE2 (active HIGH) and CE3 (active LOW) are optional for depth expansion; CE1 (active LOW) alone suffices for single-bank use. However, CE2 and CE3 must be held at fixed valid logic levels (e.g., CE2 = HIGH, CE3 = LOW) to prevent metastability. Leaving them unconnected violates datasheet DC specifications and may cause erratic chip select behavior.