Infineon Technologies CY7C1383KV33-133AXI

Overview

CY7C1383KV33-133AXI from Cypress Semiconductor is a 18-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 1M × 18 common I/O, operating at 133 MHz with 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), and 2.5 V/3.3 V I/O supply (VDDQ), used in high-speed cache and buffer subsystems of network processors and telecom line cards.

For engineers reviewing the CY7C1383KV33-133AXI datasheet, CY7C1383KV33-133AXI pinout, CY7C1383KV33-133AXI application, or CY7C1383KV33-133AXI equivalent, key selection criteria include burst mode support (interleaved/linear), synchronous self-timed write timing, JTAG boundary scan capability, and ECC-enabled soft error resilience in mission-critical embedded memory systems.

Technical Context

This SRAM implements a synchronous flow-through architecture with dual address strobes (ADSP/ADSC), a 2-bit internal burst counter, and separate processor/controller address capture logic. All synchronous inputs-including address, CE1/CE2/CE3, BWx, BWE, GW, ADV, MODE-are registered on the rising edge of CLK.

Asynchronous controls include OE (output enable) and ZZ (sleep mode), with ZZ featuring an internal pull-down. The device supports both interleaved and linear burst sequences via the static MODE pin, and integrates ECC encoding/decoding to reduce soft error rate without external logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C31026B-133JCIN and IS61WV102418BLL-133TQLI, CY7C1383KV33-133AXI uniquely delivers integrated ECC, dual-voltage I/O, programmable burst order, and JTAG testability-all within the same 100-pin TQFP footprint-making it the only option meeting full functional and reliability requirements for safety-critical embedded memory.

Availability

CY7C1383KV33-133AXI is available at Aetrix Electronics and suitable for telecom line card buffering, network processor caching, and industrial control backplane memory requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1383KV33-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY7C1383KV33 belongs to Cypress's synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency, ECC-protected memory subsystems in networking and real-time control applications.

FAQ

What is the function of the MODE pin, and how must it be connected?

The MODE pin statically configures burst address sequencing: tied to VDD (or left floating) for interleaved bursts, or grounded for linear bursts. It features an internal pull-up, so floating defaults to interleaved mode. This pin must remain static during operation-changing its state mid-burst causes undefined behavior and potential data corruption.

Does CY7C1383KV33-133AXI support JTAG boundary scan in the TQFP package?

No. JTAG pins (TCK, TMS, TDI, TDO) are not implemented in the 100-pin TQFP package; they are only available on the 165-ball FBGA variant. The TQFP version omits these pins entirely-no internal JTAG circuitry is accessible, and boundary scan testing is not supported in this package.

How does the ZZ sleep mode affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with core clocks gated and I/O drivers disabled, reducing ICC to ≤5 µA while maintaining full data retention in the SRAM array. Data remains valid indefinitely as long as VDD and VDDQ remain within specification-no refresh or wake-up latency is incurred.

Can CY7C1383KV33-133AXI operate with VDDQ = 2.5 V while VDD = 3.3 V, and what are the I/O voltage tolerances?

Yes. VDDQ may be independently set to 2.5 V while VDD is at 3.3 V. Inputs are JESD8-5-compatible: VIH(min) = 2.0 V at VDDQ = 2.5 V, and 2.4 V at VDDQ = 3.3 V; VIL(max) = 0.8 V across both VDDQ levels. Outputs swing rail-to-rail relative to VDDQ, ensuring clean signal integrity with 2.5 V logic receivers.