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Infineon Technologies CY7C1386KV33-200AXCT

Part No.:
CY7C1386KV33-200AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1386KV33-200AXCT.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,185

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Product details

Overview

CY7C1386KV33-200AXCT from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM with 512K × 36 organization, supporting 200 MHz bus operation, 3.3 V core (VDD), and dual I/O supply (2.5 V or 3.3 V VDDQ). It features registered inputs/outputs, synchronous self-timed writes, and interleaved/linear burst modes - deployed in high-speed CPU cache subsystems requiring deterministic timing and depth-expansion capability without wait states.

For engineers reviewing the CY7C1386KV33-200AXCT datasheet, CY7C1386KV33-200AXCT pinout, CY7C1386KV33-200AXCT application, or CY7C1386KV33-200AXCT equivalent, key selection criteria include clock-to-output time (3 ns), pipelined enable register behavior for deselect timing, byte-write control granularity (BWA–BWD + BWE + GW), ZZ sleep mode support, and JEDEC-standard 100-pin TQFP packaging compatibility.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter, clocked by CLK's rising edge, with address capture triggered by either ADSP (processor strobe) or ADSC (controller strobe). Burst sequencing is user-selectable via MODE pin, enabling linear or interleaved addressing patterns required by x86 or RISC-based cache controllers.

All synchronous inputs-including A[1:0], CE1/CE2/CE3, ADV, BWA–BWD, BWE, GW, and OE-are registered on the CLK rising edge; only OE and ZZ operate asynchronously. Output buffers incorporate a pipelined enable register that delays tristate assertion by one clock cycle during deselect, preserving system-level timing integrity in multi-chip depth-expanded configurations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 configuration)
Max Clock Frequency 200 MHz - enables 200 MT/s sustained throughput with pipelined access
CLK-to-Output Delay (tCO) 3 ns - guarantees deterministic data valid window for synchronous latch alignment
Core Supply Voltage 3.3 V ±0.3 V (VDD) - matches standard LVTTL/SSTL-3 I/O domain logic levels
I/O Supply Voltage 2.5 V or 3.3 V (VDDQ) - supports mixed-voltage system interfacing with DDR/SDRAM controllers
Burst Access Rate 3-1-1-1 - delivers first word in 3 clocks, subsequent words every 1 clock for burst-4 sequences
Sleep Mode ZZ active-HIGH - reduces standby current while retaining data integrity without external refresh

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
CLK Clock input Rising-edge-triggered master timing reference for all synchronous registers and burst counter
ADSP / ADSC Address strobe inputs Asynchronous initiation signals for address capture; ADSP takes priority when both asserted
ADV Burst advance control Active-LOW signal that increments internal two-bit counter to generate next burst address
BWA–BWD, BWE, GW Byte write controls Enable selective 1–4 byte writes per cycle; GW overrides BWX/BWE to force full-word write
OE Asynchronous output enable Active-LOW tristate control; masked during first read cycle after deselect to prevent bus contention
ZZ Asynchronous sleep input Active-HIGH entry into low-power retention mode; internal pull-down ensures safe default LOW state

Key Features

Feature Design Value
Pipelined enable register Delays output buffer tristate by one clock cycle during chip deselect - eliminates wait states in depth-expanded memory banks
User-selectable burst mode MODE pin configures linear or interleaved burst addressing - matches Intel Pentium or PowerPC cache controller protocols
Synchronous self-timed writes On-chip write timing logic removes external write pulse generation - simplifies controller design and improves setup/hold margin
Dual I/O voltage support VDDQ accepts 2.5 V or 3.3 V - enables direct interface to legacy 3.3 V peripherals or modern 2.5 V memory controllers
Depth expansion capability Three independent chip enables (CE1 active-LOW, CE2 active-HIGH, CE3 active-LOW) - supports up to 8-way bank decoding without glue logic

Applications

High-Performance CPU Cache Network Packet Buffer

Use Scenario: Secondary cache in embedded x86 or ARM-based SoCs handling real-time instruction fetch and data streaming.

IC Role / Device Role / Timing Role: Pipelined synchronous SRAM providing deterministic 3 ns tCO and burst-4 3-1-1-1 access for L2 cache line fills.

Use Value: Eliminates wait states during depth expansion across multiple CY7C1386KV33 devices, maintaining 200 MHz bus efficiency under burst load.

Use Scenario: Line-rate packet buffering in enterprise switches supporting 10 GbE MAC-layer traffic shaping.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for temporary storage of fragmented Ethernet frames before reassembly.

Use Value: Synchronous self-timed writes and byte-select capability allow partial frame updates without full-line overwrites, reducing latency jitter.

Industrial Motion Controller Avionics Data Recorder

Use Scenario: Real-time trajectory interpolation buffer in CNC motion controllers requiring sub-microsecond memory access repeatability.

IC Role / Device Role / Timing Role: Deterministic SRAM with ZZ sleep mode for power-gated idle periods between motion segments.

Use Value: 3.3 V core + 2.5 V I/O allows clean separation from FPGA I/O banks, minimizing noise coupling into analog servo feedback paths.

Use Scenario: Non-volatile flight data recorder buffer capturing sensor telemetry at 100 kHz sample rate with guaranteed write persistence.

IC Role / Device Role / Timing Role: High-reliability synchronous SRAM with neutron soft error immunity (documented in datasheet p.11).

Use Value: Registered inputs/outputs and synchronous write protocol ensure bit-accurate capture even during EMI-intensive takeoff/landing phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3316P-20TIN 16-Mbit (1M × 16), 20 ns async access, no burst counter or pipelined enable register Lacks synchronous burst and depth-expansion optimization - suitable only for non-pipelined legacy controllers Select only if system uses asynchronous interface and does not require 200 MHz timing or burst addressing
IS61WV102432BLL-10BLI 32-Mbit (1M × 32), 10 ns tCO, supports 133 MHz sync clock but no ZZ sleep or ADV-controlled burst No dedicated sleep mode or programmable burst sequence - higher static power, less flexible cache integration Prefer when density >18 Mbit is required and ZZ retention or burst-mode flexibility are secondary

Compared with AS7C3316P-20TIN and IS61WV102432BLL-10BLI, CY7C1386KV33-200AXCT uniquely combines 200 MHz pipelined operation, ZZ sleep, and hardware burst sequencing - making it irreplaceable in high-performance cache subsystems where timing determinism and power-aware depth expansion are mandatory.

Availability

CY7C1386KV33-200AXCT is available at Aetrix Electronics and suitable for high-speed CPU cache, network packet buffering, industrial motion control, and avionics data recording requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1386KV33-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing timing precision, reliability, and interoperability with leading processor architectures.

CY7C1386KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic cache and buffer applications in computing, networking, and real-time control systems where pipelined access and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1386KV33-200AXCT?

The MODE pin selects burst addressing sequence: logic HIGH configures interleaved burst (e.g., for Pentium-compatible systems), while logic LOW selects linear burst (e.g., for PowerPC or custom controllers). It is sampled synchronously on the rising edge of CLK during the first cycle of a burst access and remains latched for the duration of that burst.

How does the pipelined enable register improve system performance in depth-expanded configurations?

The pipelined enable register delays output buffer tristate assertion by one clock cycle after chip deselect. This prevents bus contention and eliminates the need for wait states when switching between adjacent memory banks - enabling seamless 200 MHz operation across multi-device depth-expanded arrays without external timing compensation.

Can CY7C1386KV33-200AXCT operate with mixed VDDQ voltages across different devices in the same system?

Yes - each device independently accepts either 2.5 V or 3.3 V on VDDQ. This allows heterogeneous interfacing: e.g., one bank connected to a 2.5 V FPGA I/O bank and another to a 3.3 V microcontroller bus, provided VDDQ ground (VSSQ) is properly partitioned and decoupled per supply domain.

Is ZZ sleep mode compatible with continuous clock operation?

Yes - ZZ active-HIGH places the core in low-power retention while allowing CLK to remain running. All registers retain state, and the device resumes full operation within one clock cycle after ZZ returns LOW. This enables dynamic power gating during idle intervals without clock gating complexity or resynchronization overhead.

CY7C1386KV33-200AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1386KV33-200AXCT FAQ

1.How can I place an order for CY7C1386KV33-200AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1386KV33-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1386KV33-200AXCT reliable?

The price and inventory of CY7C1386KV33-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1386KV33-200AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1386KV33-200AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1386KV33-200AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1386KV33-200AXCT?

CY7C1386KV33-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1386KV33-200AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1386KV33-200AXCT?

For technical support, including CY7C1386KV33-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1386KV33-200AXCT requirements.

6.How does Aetrix verify that CY7C1386KV33-200AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1386KV33-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1386KV33-200AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1386KV33-200AXCT?

All CY7C1386KV33-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1386KV33-200AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1386KV33-200AXCT part is unused and in its original packaging.

Return procedure for CY7C1386KV33-200AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1386KV33-200AXCT Tags

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