Infineon Technologies CY7C1386S-167AXC

Overview

CY7C1386S-167AXC from Cypress Semiconductor is a 18-Mbit (512 K × 36) pipelined DCD synchronous SRAM with registered inputs/outputs, 167 MHz bus operation support, 3.4 ns clock-to-output time, and dual-voltage I/O (2.5 V/3.3 V). It serves as high-performance secondary cache in Pentium®-compatible systems requiring burst-mode memory access with depth expansion capability.

For engineers reviewing the CY7C1386S-167AXC datasheet, CY7C1386S-167AXC pinout, CY7C1386S-167AXC application, or CY7C1386S-167AXC equivalent, key selection criteria include synchronous burst timing, byte-write control granularity, ZZ sleep mode behavior, and JEDEC-standard 100-pin TQFP compatibility for legacy x86 cache subsystems.

Technical Context

The device implements a two-bit wraparound burst counter synchronized to CLK's rising edge, supporting both Intel Pentium®-interleaved and linear burst sequences selected via the static MODE pin. All address, data, and control inputs (CE1/CE2/CE3, ADSP/ADSC, ADV, BWE/BWX, GW) are registered on the same clock edge.

It features pipelined enable logic that delays output buffer disable by one cycle during deselect, enabling zero-wait-state depth expansion. Write cycles are self-timed and synchronous; reads deliver data on the second clock edge after address capture, with OE providing asynchronous tri-state control independent of clock timing.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), JEDEC-standard Pb-free, compatible with automated SMT assembly and thermal management in dense cache modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102436BLL-167BLI and MT55LSD25636DZ-167:J, the CY7C1386S-167AXC uniquely supports mixed 2.5 V/3.3 V I/O and Pentium®-interleaved burst mode out-of-box, making it optimal for legacy x86 cache upgrades where voltage flexibility and burst compatibility are non-negotiable.

Availability

CY7C1386S-167AXC is available at Aetrix Electronics and suitable for secondary cache implementations, network processor buffers, depth-expanded memory subsystems, and legacy x86 industrial control modules requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1386S-167AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and computing applications.

The CY7C1386S belongs to Cypress's DCD Sync SRAM product line, engineered specifically for low-latency, burst-capable cache and buffer applications in x86-compatible and ASIC-based systems demanding deterministic timing and depth scalability.

FAQ

What is the function of the MODE pin on CY7C1386S-167AXC?

The MODE pin is a static configuration input that selects burst address sequence: tied to GND for linear burst, tied to VDD or left floating for Intel Pentium®-interleaved burst. It must remain stable during operation and is sampled only at power-up or reset; no dynamic switching is supported.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with full data retention. Wake-up occurs synchronously on the first valid CLK edge after ZZ returns LOW, with no additional stabilization delay required before initiating read/write operations.

Can CY7C1386S-167AXC operate with only 2.5 V on VDDQ while VDD remains at 3.3 V?

Yes - VDD must be 3.3 V ± 0.3 V for core operation, while VDDQ may be independently set to either 2.5 V ± 0.2 V or 3.3 V ± 0.3 V. This allows direct interfacing with 2.5 V processors without level shifters, provided VSSQ is referenced to the same ground as VDDQ.

What is the timing relationship between ADSP assertion and data output validity?

Data appears at DQ/DQP outputs on the rising edge of the second CLK cycle after ADSP is asserted LOW (assuming CE1–CE3 active and OE LOW). The first cycle captures the address; the second cycle clocks out the data with tCO ≤ 3.4 ns, regardless of whether the device was previously deselected.