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Infineon Technologies CY7C1392CV18-200BZC

Part No.:
CY7C1392CV18-200BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1392CV18-200BZC.pdf
Description:
IC SRAM 16MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,444

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Product details

Overview

CY7C1392CV18 from Cypress Semiconductor is a 18-Mbit (2M × 8) synchronous pipelined SRAM with DDR-II Separate I/O architecture, operating at 200 MHz with 1.5-cycle read latency (DLL enabled), 1.8V core supply, and HSTL I/O compatible with 600 Mbps data transfer. It serves as high-bandwidth buffer memory in network packet processors requiring burst-aligned dual-port access without bus turnaround.

For engineers reviewing the CY7C1392CV18 datasheet, CY7C1392CV18 pinout, CY7C1392CV18 application, or CY7C1392CV18 equivalent, key selection criteria include DDR-II SIO timing compliance, 165-ball FBGA mechanical fit, DLL-enabled latency mode, HSTL output drive matching, and 2-word burst address multiplexing behavior.

Technical Context

This SRAM implements a synchronous pipelined architecture with independent read and write ports sharing a common address bus, latching addresses on alternating rising edges of complementary K/K clocks. Write data is registered on both K and K edges, while read data is clocked out synchronously via C/C or K/K in single-clock mode.

The device integrates a Delay Lock Loop (DLL) for precise data placement relative to echo clocks CQ/CQ, supports JTAG 1149.1 boundary scan, and uses ZQ calibration to match output impedance to system trace resistance. Nibble write select (NWS0/NWS1) enables partial-byte writes without disturbing adjacent nibbles.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (2M × 8 configuration)
Max Clock Frequency 200 MHz - defines maximum sustained burst throughput of 400 MB/s (2 words × 8 bits × 200 MHz)
Read Latency 1.5 cycles with DLL enabled - ensures deterministic setup/hold margins for CQ-synchronized capture at 200 MHz
Core Supply Voltage 1.8 V ± 0.1 V - powers internal logic and array; requires tight regulation to maintain timing margin
I/O Interface Standard HSTL Class I - provides 1.4–1.8 V output swing and matched termination for 600 Mbps DDR signaling
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - supports high-density routing with controlled impedance ball pitch
Burst Length 2-word fixed - reduces external address bus toggling frequency by 50% versus single-word access

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant lead-free option available.

Pin/Terminal Circuit Role Design Meaning
D[7:0] Synchronous data input Latched on rising edges of K and K; supports partial-write via NWS0/NWS1
Q[7:0] Synchronous data output Driven on rising edges of C/C (or K/K); synchronized to echo clocks CQ/CQ
K / K Input clock pair Capture all synchronous inputs (address, R/W, LD, NWS); defines burst initiation timing
C / C Output clock pair Control Q[7:0] edge alignment; used with CQ/CQ to deskew flight time across multiple devices
CQ / CQ Echo clock outputs Free-running, phase-locked to C/C; enable source-synchronous data capture at controller
R/W Read/write direction control Sampled with LD low to define transaction type; must meet setup/hold relative to K edge
LD Load strobe Active-low signal defining start of bus cycle; initiates address latching and port selection
NWS0 / NWS1 Nibble write select Active-low controls D[3:0] and D[7:4]; allows 4-bit granularity writes without full-byte overwrite
ZQ Impedance calibration reference Connects to external resistor to ground (RQ) to calibrate output driver strength to 0.2×RQ
DOFF DLL disable Pulled low to disable DLL and operate in DDR-I mode (1-cycle latency, max 167 MHz)
VDD / VDDQ / VSS Power and ground VDD = 1.8 V core; VDDQ = 1.8 V I/O; separate planes required for noise isolation
TCK/TMS/TDI/TDO JTAG test interface IEEE 1149.1 compliant; supports boundary scan and device-level diagnostics

Key Features

Feature Design Value
DDR-II Separate I/O Architecture Eliminates data bus turnaround delay by dedicating D[7:0] for writes and Q[7:0] for reads
2-Word Burst Address Multiplexing Reduces external address bus toggle rate by half, lowering EMI and PCB routing complexity
Programmable DLL with DOFF Pin Enables runtime switching between 1.5-cycle (DLL on) and 1-cycle (DLL off) read latency modes
HSTL Class I Outputs with ZQ Calibration Ensures consistent 1.4–1.8 V swing and 25–35 Ω driver impedance across voltage/temperature
Nibble-Level Write Control (NWS0/NWS1) Permits partial updates to 4-bit segments within an 8-bit word without disturbing adjacent data

Applications

Network Packet Buffer High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port burst SRAM providing simultaneous read (lookup engine) and write (ingress FIFO) access with sub-5 ns cycle time at 200 MHz.

Use Value: Eliminates bus turnaround overhead, enabling sustained 400 MB/s throughput for 64-byte packet buffering without pipeline stalls.

Use Scenario: Capturing real-time waveform samples in automated test equipment (ATE) during high-speed digital pattern generation.

IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer interfacing directly to FPGA-based pattern generators with HSTL-compatible I/O banks.

Use Value: 2-word burst + echo clocks (CQ/CQ) allow FPGA to latch valid data with ±50 ps skew tolerance across 16+ parallel channels.

Baseband Signal Processing Buffer Industrial Motion Controller FIFO

Use Scenario: Temporary storage of OFDM symbol data between FFT processing stages in LTE femtocell baseband units.

IC Role / Device Role / Timing Role: Low-latency SRAM acting as ping-pong buffer between two DSP cores, synchronized via shared K/K and C/C clocks.

Use Value: DLL-enabled 1.5-cycle latency guarantees deterministic timing for symbol-aligned DMA transfers at 200 MHz clock domain.

Use Scenario: Holding interpolated position commands and feedback samples in closed-loop servo drives with microsecond jitter requirements.

IC Role / Device Role / Timing Role: Deterministic-access FIFO between motion controller ASIC and fieldbus interface, using NWS0/NWS1 for partial command updates.

Use Value: Nibble-select writes allow updating only velocity or acceleration fields within a 32-bit command word without corrupting position data.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1392CV18-250BZC Higher max frequency (250 MHz), identical pinout and DDR-II SIO architecture Requires tighter PCB layout control for signal integrity above 200 MHz; same thermal profile Select when system clock budget permits >200 MHz operation and board layout supports 250 MHz timing closure
IS61WV102416BLL-10TLI Asynchronous 16-bit wide SRAM, no DDR-II, no echo clocks, 10 ns access time Lacks burst, DLL, or HSTL support; limited to ≤100 MHz sustained throughput Choose only for legacy designs where DDR timing complexity must be avoided and bandwidth <200 MB/s suffices

Compared with CY7C1392CV18-250BZC, this -200BZC variant trades 50 MHz headroom for relaxed timing margin and lower power at 200 MHz; versus IS61WV102416BLL-10TLI, it delivers 2× bandwidth and deterministic DDR-II timing but demands precise clock routing and impedance control.

Availability

CY7C1392CV18 is available at Aetrix Electronics and suitable for network infrastructure, automated test equipment, baseband signal processing, and industrial motion control applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1392CV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications systems, with emphasis on signal integrity and timing precision.

This device belongs to the DDR-II SIO SRAM product line, engineered specifically for high-throughput, low-latency buffering in systems where deterministic DDR timing and burst efficiency outweigh asynchronous simplicity.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW, forcing the device into DDR-I mode with 1-cycle read latency and reduced maximum frequency (167 MHz). In normal operation (DOFF HIGH), DLL alignment enables 1.5-cycle latency at 200 MHz, ensuring precise CQ-synchronized data capture. The timing parameters differ significantly between modes, requiring separate setup/hold validation.

How are the NWS0 and NWS1 signals used during write operations?

NWS0 and NWS1 are active-LOW nibble write selects sampled on the same K/K edges as write data. NWS0 enables writing to D[3:0], and NWS1 enables D[7:4]; if either is HIGH, the corresponding 4-bit segment retains its prior value. This allows partial updates to an 8-bit word without full-word overwrite or additional read-modify-write cycles.

Can C and C clocks be omitted in system design?

Yes - when C and C are unconnected, the device defaults to single-clock mode using K and K to clock both input and output registers. However, echo clocks CQ/CQ remain functional and aligned to K/K, preserving source-synchronous capture capability. Omitting C/C sacrifices deskew flexibility but simplifies clock distribution for less demanding layouts.

What is the role of the ZQ pin, and how should it be terminated?

ZQ calibrates output driver impedance to match the system data bus. It must be connected to a precision resistor (RQ) tied to ground; typical RQ = 120 Ω yields ~24 Ω driver impedance (0.2 × RQ). Direct connection to VDDQ enables minimum impedance mode (~15 Ω), while floating or grounding ZQ violates specification and causes undefined output strength.

CY7C1392CV18-200BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1392CV18-200BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1392CV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1392CV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1392CV18-200BZC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1392CV18-200BZC?

For technical support, including CY7C1392CV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1392CV18-200BZC requirements.

6.How does Aetrix verify that CY7C1392CV18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1392CV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1392CV18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1392CV18-200BZC?

All CY7C1392CV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1392CV18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1392CV18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1392CV18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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