Infineon Technologies CY7C1393BV18-167BZC

Overview

CY7C1393BV18-167BZC from Cypress Semiconductor is a 1M × 18 (18-Mbit), 1.8V synchronous pipelined SRAM with DDR-II Separate I/O architecture, supporting 167 MHz maximum operating frequency, 2-word burst read/write, and dual-clock DDR timing using K/K and C/C pairs. It delivers 600 MT/s effective data rate in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1393BV18-167BZC datasheet, CY7C1393BV18-167BZC pinout, CY7C1393BV18-167BZC application, or CY7C1393BV18-167BZC equivalent, key selection criteria include DDR-II SIO timing margin, HSTL-18 I/O compatibility, DLL-enabled data placement accuracy, and 165-ball FBGA mechanical fit for dense PCB layouts.

Technical Context

This SRAM implements a synchronous, pipelined burst architecture with physically separate read and write data paths-eliminating bus turnaround overhead. Internal organization is two 512K × 18 arrays, accessed via multiplexed address inputs (A[18:0]) latched on alternating rising edges of K and K clocks.

Read data is registered and driven synchronously on both C and C rising edges, while echo clocks CQ/CQ are phase-aligned to C/C for precise system-level capture. The integrated Delay Lock Loop (DLL) aligns internal timing to minimize skew between Q[17:0] and CQ/CQ, enabling reliable operation at 167 MHz with 3.0 ns clock-to-output delay.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and edge-aligned signal ball layout optimized for controlled-impedance DDR routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1393BV18-200BZC, this -167BZC variant trades 33 MHz peak bandwidth for reduced power and relaxed timing closure; versus AS7C31026B-167JCIN, it delivers 2× effective throughput and eliminates bus turnaround latency at the cost of tighter layout constraints.

Availability

CY7C1393BV18-167BZC is available at Aetrix Electronics and suitable for packet buffering, network switch ASIC interfacing, telecom line card design, and high-speed test equipment requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1393BV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, emphasizing signal integrity and timing precision.

CY7C1393BV18 belongs to the DDR-II SIO SRAM product line, engineered specifically for deterministic, low-latency burst memory applications in high-speed digital infrastructure where DDR timing control and echo-clock synchronization are critical.

FAQ

What is the function of the DOFF pin on CY7C1393BV18-167BZC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the DLL is bypassed and output timing reverts to basic clock-to-output delay without phase alignment to CQ/CQ. This mode increases clock-to-output variation to ±1.2 ns and is intended only for debug, characterization, or compatibility with legacy timing models-not for production operation.

Can CY7C1393BV18-167BZC operate with only a single clock source?

Yes-it supports single-clock mode using only K and K for both input capture and output driving. In this mode, C and C are not required, and read data is driven on the rising edges of K and K instead of C/C. However, echo clocks CQ/CQ remain functional and aligned to K/K, preserving deskew capability. Setup/hold timing margins tighten by ~15% compared to dual-clock mode.

How does ZQ calibration affect HSTL output drive strength?

ZQ connects to an external 240 Ω resistor to ground, enabling on-die calibration of output driver impedance to match 50 Ω transmission lines. This sets Q[17:0], CQ, and CQ output impedance to 0.2 × R_Q = 48 Ω, minimizing signal reflections and improving eye diagram integrity. Leaving ZQ floating or tying it to GND causes undefined drive strength and violates HSTL Class I specifications.

What is the purpose of BWS[1:0] in the 1M × 18 configuration?

BWS[1:0] are active-low byte write select signals that enable independent 9-bit writes within each 18-bit word. BWS0 controls D[8:0], BWS1 controls D[17:9]. When one BWS is deasserted, its corresponding 9-bit segment retains prior data during the write cycle. This allows partial updates without read-modify-write sequences-critical for efficient packet header modification in networking applications.