Infineon Technologies CY7C1393BV18-278BZC

Overview

CY7C1393BV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined SRAM with DDR-II Separate I/O architecture, supporting 300 MHz clock operation and 600 Mbps data transfer via double-data-rate interface. It features dual input clocks (K/K), echo clocks (CQ/CQ), and HSTL I/O for high-speed memory buffering in network packet processors and FPGA co-processor interfaces.

For engineers reviewing the CY7C1393BV18 datasheet, CY7C1393BV18 pinout, CY7C1393BV18 application, or CY7C1393BV18 equivalent, key selection criteria include burst depth (2-word), DDR timing alignment via DLL, 1.8V core supply with variable-drive HSTL outputs, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous, pipelined read/write architecture with physically separate read and write data paths-eliminating bus turnaround delay. Address latching occurs on alternating rising edges of K/K, while write data is registered on both K and K edges, enabling deterministic 2-word burst access.

Output timing is synchronized to C/C clocks (or K/K in single-clock mode), with echo clocks CQ/CQ referenced to C/C to simplify system-level data capture. The integrated Delay Lock Loop (DLL) aligns internal data launch to output clocks with sub-cycle precision, and ZQ pin enables dynamic output impedance calibration to match 50 Ω transmission lines.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256B-20TIN and IS61WV102418BLL-10BLI, CY7C1393BV18 uniquely delivers DDR-II SIO, DLL-aligned echo clocks, and ZQ calibration - enabling robust 300 MHz operation in complex multi-device memory subsystems without custom timing compensation.

Availability

CY7C1393BV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1393BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

CY7C1393BV18 belongs to the DDR-II SIO SRAM product line, engineered specifically for low-latency, high-throughput memory interfacing in FPGA- and ASIC-based infrastructure equipment where deterministic timing and signal integrity are critical.

FAQ

What is the minimum supported clock frequency for CY7C1393BV18?

The device operates down to DC for static functionality, but guaranteed timing performance begins at 167 MHz per the Selection Guide. At lower frequencies, setup/hold margins increase, allowing relaxed PCB layout and simpler clock distribution - however, DLL lock range remains fixed at 200–300 MHz, so DLL must be disabled (via DOFF) below 200 MHz.

Can CY7C1393BV18 operate in single-clock mode without C and C inputs?

Yes - when C and C are tied to K and K respectively, the device enters single-clock mode. In this configuration, Q[17:0] outputs are driven on K/K edges, and CQ/CQ echo clocks track K/K instead of C/C. All timing parameters shift to K/K-referenced values, and maximum frequency drops to 278 MHz per datasheet specifications.

How does ZQ calibration affect signal integrity in multi-drop memory buses?

ZQ calibration adjusts the output driver impedance of Q[17:0] and CQ/CQ pins to match the system's characteristic impedance (typically 50 Ω). When all devices on a shared bus use identical ZQ resistor values (e.g., 240 Ω), their combined output impedance minimizes reflections and improves eye height by up to 15% at 300 MHz - verified in Cypress application note AN58082.

Is JTAG boundary scan supported during normal SRAM operation?

Yes - the IEEE 1149.1 TAP controller operates independently of memory function. TDI/TDO/TCK/TMS pins remain active and controllable even while the SRAM executes read/write bursts. This allows live interconnect testing without halting system operation, provided TMS is held HIGH during functional mode and cycled for test entry.