Infineon Technologies CY7C1393CV18-250BZXC

Overview

CY7C1393CV18-250BZXC from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II SIO SRAM with 2-word burst architecture, 250 MHz maximum operating frequency, 1.8V core supply, and HSTL I/O. It delivers 600 Mbps data transfer via double-data-rate interface and supports DLL-enabled 1.5-cycle read latency for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1393CV18-250BZXC datasheet, CY7C1393CV18-250BZXC pinout, CY7C1393CV18-250BZXC application, or CY7C1393CV18-250BZXC equivalent, key selection criteria include DDR II SIO timing compliance, 165-ball FBGA mechanical fit, HSTL-18 I/O voltage tolerance, and DLL-on/off mode behavior under system clock skew constraints.

Technical Context

This SRAM implements a true separate I/O DDR II architecture with independent read and write ports sharing one address bus. It uses dual-phase input clocks (K/K) for address/data capture and dual-phase output clocks (C/C) plus echo clocks (CQ/CQ) to deskew data flight time across multi-device memory subsystems.

The device supports synchronous self-timed writes, programmable DLL (via DOFF pin), and variable-drive HSTL outputs with ZQ impedance calibration. In DLL-off mode, it reverts to DDR I timing with 1-cycle latency and reduced max frequency (≤167 MHz), enabling backward compatibility in legacy systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1393CV18-300BZXC, this -250BZXC variant trades 50 MHz speed for lower power (725 mA vs. 865 mA) and relaxed timing margins; versus IS42S16160F-6BLI, it delivers deterministic sub-5 ns read latency and true zero-turnaround I/O - essential for real-time packet and video processing.

Availability

CY7C1393CV18-250BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card data caches, and industrial video frame buffers requiring stable component supply, long-lifecycle support, and guaranteed FBGA mechanical compatibility.

Supply support for CY7C1393CV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

This device belongs to the DDR II SIO SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in networking, telecom, and video infrastructure where DDR SDRAM unpredictability is unacceptable.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device operates in DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When DOFF is HIGH, DLL is active and enables 1.5-cycle latency at full rated speed (250 MHz). The timing parameters differ significantly between modes - refer to Tables 7 and 8 in the datasheet for exact setup/hold and access values.

Can CY7C1393CV18-250BZXC operate with only K and K clocks, without C and C?

Yes - the device supports single-clock mode. Tie C and C HIGH at power-on to configure the output registers to use K/K instead of C/C. All timing remains identical, but echo clocks (CQ/CQ) will track K/K instead of C/C. This mode simplifies clock routing in space-constrained layouts but forfeits board-level deskew capability for read data.

How does ZQ calibration work, and what resistor value is required?

ZQ connects to an external precision resistor (RQ) tied to ground. The device measures RQ and adjusts its output driver strength so that CQ/Q[17:0] output impedance equals 0.2 × RQ. For standard 50 Ω trace matching, use RQ = 240 Ω (±1%). Do not leave ZQ floating or tie it directly to GND - either causes undefined output drive strength and signal integrity failure.

Is the 165-ball FBGA package compatible with CY7C1394CV18 variants?

No - although both devices share the same 165-ball FBGA footprint and mechanical dimensions, their pinouts differ significantly. CY7C1393CV18 (1M × 18) uses BWS[1:0], D[17:0], and Q[17:0], while CY7C1394CV18 (512K × 36) uses BWS[3:0], D[35:0], and Q[35:0]. Interchanging them on the same PCB will cause functional failure due to misrouted data and control signals.