Infineon Technologies CY7C1393JV18-300BZXC

Overview

CY7C1393JV18-300BZXC from Cypress Semiconductor is a 18 Mbit (1M × 18) synchronous pipelined DDR II SIO SRAM with two-word burst architecture, 300 MHz clock operation, 1.8 V core supply, and HSTL I/O. It delivers 600 Mbps data transfer via double-data-rate interface and supports precise timing using dual input clocks (K/K) and echo clocks (CQ/CQ). Used in high-bandwidth networking buffers and packet-switching ASIC interfaces.

For engineers reviewing the CY7C1393JV18-300BZXC datasheet, CY7C1393JV18-300BZXC pinout, CY7C1393JV18-300BZXC application, or CY7C1393JV18-300BZXC equivalent, key selection criteria include DDR II SIO architecture, 1.5-cycle read latency with DLL enabled, 165-ball FBGA package, HSTL output drive control, and JTAG 1149.1 test access compliance.

Technical Context

This SRAM implements a synchronous pipelined burst architecture with physically separate read and write ports-eliminating data bus turnaround-and uses rising edges of K/K for address/data capture and C/C for output timing. The internal organization comprises two 512K × 18 arrays, enabling concurrent read/write initiation on every K edge.

It supports dual-clock domain operation (K/K for inputs, C/C for outputs) with echo clocks CQ/CQ referenced to C/C for system-level deskew, and includes a programmable Delay Lock Loop (DLL) that enables 1.5-cycle read latency at 300 MHz or reverts to DDR I–compatible 1-cycle latency when DOFF is asserted low.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, bottom-side thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102418BLL-15BLI and MT45W16MW16BG-300A, CY7C1393JV18-300BZXC provides deterministic 1.5-cycle latency, zero-refresh operation, and echo-clock–assisted deskew-critical for ASIC/FPGA co-designs demanding cycle-accurate timing and maximum bandwidth efficiency.

Availability

CY7C1393JV18-300BZXC is available at Aetrix Electronics and suitable for high-speed networking line cards, telecom baseband processing units, and automated test equipment requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for CY7C1393JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on signal integrity and timing precision.

CY7C1393JV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in ASIC/FPGA-based systems where DDR2 SDRAM latency and complexity are unacceptable.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low DLL disable input. When tied HIGH (via 10 kΩ pull-up), the internal Delay Lock Loop operates, enabling 1.5-cycle read latency at 300 MHz. When pulled LOW, the DLL is disabled and the device reverts to DDR I–compatible timing with 1-cycle latency and a maximum frequency of 167 MHz. This provides a hardware-selectable trade-off between peak bandwidth and timing margin.

How do CQ and CQ echo clocks improve system-level timing closure?

CQ and CQ are free-running output clocks synchronized to C and C, respectively. They replicate the phase relationship between output data (Q[17:0]) and the output clocks at the SRAM die, allowing the receiving controller to use them as local capture clocks. This eliminates the need to match individual trace lengths from each SRAM to the controller, significantly easing PCB layout and improving timing margin in multi-device DDR II SIO systems.

Can CY7C1393JV18-300BZXC operate in single-clock mode, and how is it configured?

Yes. Single-clock mode is enabled by strapping C and C HIGH at power-on. In this mode, K/K serve as both input and output timing references, eliminating the need for separate C/C generation. All timing parameters remain identical to dual-clock mode, and the device behaves as if C/C have zero skew relative to K/K. This configuration is fixed at power-up and cannot be changed dynamically.

What is the role of the ZQ pin, and what external component is required?

ZQ is an impedance calibration input that sets the output driver impedance for Q[17:0], CQ, and CQ. It must be connected to a 240 Ω resistor tied to ground to calibrate outputs to 48 Ω ±10%. Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω). Leaving ZQ floating or tying it to VSS is prohibited and will cause undefined output behavior.