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Infineon Technologies CY7C1399BN-12VXCT

Part No.:
CY7C1399BN-12VXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
AetrixCY7C1399BN-12VXCT.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,974

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Product details

Overview

CY7C1399BN-12VXCT from Cypress Semiconductor is a 256K (32K × 8) asynchronous CMOS static RAM operating at 3.3 V, featuring 12 ns access time, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down mode reducing standby current to 500 µA. It delivers low active power (180 mW max) using alpha-immune 6T cell technology and supports cache memory in embedded controllers and network interface cards.

For engineers reviewing the CY7C1399BN-12VXCT datasheet, CY7C1399BN-12VXCT pinout, CY7C1399BN-12VXCT application, or CY7C1399BN-12VXCT equivalent, key selection criteria include TTL/CMOS-compatible control timing (tACE = 12 ns, tDOE = 5 ns), tristate I/O with high-impedance isolation during deselect, and Pb-free SOJ package compatibility with legacy board layouts.

Technical Context

The CY7C1399BN-12VXCT implements a fully asynchronous SRAM architecture with independent Chip Enable (CE), Output Enable (OE), and Write Enable (WE) controls. Its 32K × 8 organization uses a 15-bit address bus (A0–A14) and 8-bit bidirectional I/O (I/O0–I/O7), enabling direct byte-level read/write without external latching.

Power management is handled via dual-mode standby: ISB1 (5 mA, TTL input thresholds) and ISB2 (500 µA, CMOS input thresholds), triggered automatically when CE is HIGH and inputs are stable. The device maintains data retention down to 2.0 V VCC with ICCDR ≤ 20 µA, supporting low-voltage hold modes in battery-backed systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256 Kbit (32,768 × 8), enabling compact buffer storage for 8-bit microcontrollers without external multiplexing
Access Time 12 ns maximum - meets timing budget for 80 MHz CPU interfaces with zero wait states
VCC Supply 3.3 V ±300 mV - compatible with standard LVTTL and LVCMOS I/O domains
Standby Current 500 µA max (ISB2, industrial temp) - enables >1-year battery life in maintenance-free backup SRAM applications
Operating Temp –40°C to +85°C - qualified for industrial control cabinets and automotive-A ambient environments
I/O Drive IOH = –2.0 mA / IOL = 4.0 mA - sufficient to drive 10 LVTTL loads or 20 cm PCB traces without termination
Data Retention VCC 2.0 V minimum - allows graceful shutdown and resume in brown-out conditions

Pinout & Package

Package: 28-pin Plastic SOJ (300-mil width), Pb-free, JEDEC MS-012AC compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit unidirectional address bus selecting one of 32,768 memory locations
I/O0–I/O7 Bidirectional Data Bus 8-bit tristate I/O lines shared for read data output and write data input
CE Chip Enable (active LOW) Primary chip select; initiates automatic power-down when HIGH and all inputs stable
OE Output Enable (active LOW) Enables data output drivers only when CE is also LOW; no effect during write cycles
WE Write Enable (active LOW) Controls direction of I/O bus: LOW enables write, HIGH enables read (with OE LOW)
VCC Power Supply 3.3 V core supply; decoupling required within 10 mm of pin per layout guidelines
GND Ground Reference Dedicated ground pin (Pin 14); must be connected to low-impedance plane for signal integrity

Key Features

Feature Design Value
Alpha-immune 6T cell Eliminates soft errors in industrial radiation environments without requiring ECC overhead
Automatic CE power-down Reduces standby current by >95% without external logic or software intervention
Tristate I/O with fast Z-state transitions tHZOE = 5 ns / tLZCE = 3 ns - prevents bus contention during multi-chip memory expansion
Pb-free SOJ package Direct drop-in replacement for legacy CY7C1399B-12VXC in existing reflow profiles
Industrial temperature qualification Guaranteed 12 ns access across –40°C to +85°C, eliminating derating calculations

Applications

Network Interface Buffer Industrial PLC Data Cache

Use Scenario: Storing packet headers and descriptor tables in 10/100 Mbps Ethernet MAC controllers.

IC Role / Device Role / Timing Role: Asynchronous data buffer interfacing directly to ARM7 or MIPS-based NIC SoCs with 8-bit data bus.

Use Value: 12 ns access enables single-cycle reads for descriptor fetch, reducing packet processing latency by 18% versus 15 ns alternatives.

Use Scenario: Holding real-time I/O status and ladder logic intermediate variables in modular PLC backplanes.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM accessed by dual-port controller during runtime and firmware updates.

Use Value: 500 µA ISB2 current allows continuous operation on 24 VDC backup supplies for >3 years without refresh.

Automotive Infotainment UI Cache Medical Diagnostic Imaging FIFO

Use Scenario: Caching GUI bitmap tiles and font glyphs in automotive head-unit displays with ASIL-B compliance requirements.

IC Role / Device Role / Timing Role: High-reliability SRAM used in display subsystems where alpha particle immunity is mandated.

Use Value: Alpha-immune 6T cell design eliminates need for periodic scrubbing, simplifying safety-critical firmware certification.

Use Scenario: Temporary frame buffering between ultrasound ADC and DSP engine in portable diagnostic devices.

IC Role / Device Role / Timing Role: Low-power, fast-access memory handling bursty 8-bit pixel streams at 25 MSPS.

Use Value: 180 mW active power enables thermal design within 1.5 W total system envelope for handheld form factor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV25616AL-12TQLI 16-bit bus (256K × 16), 12 ns, 3.3 V, but requires address multiplexing for 8-bit systems Requires PCB redesign for 8-bit data path; higher density not usable without bus widening Select only if migrating to 16-bit architecture or needing larger contiguous memory blocks
ON Semiconductor MC68HC11E9CP Microcontroller with integrated 512-byte SRAM - no external memory interface capability Not a drop-in replacement; lacks parallel address/data bus and CE/OE/WE controls Reject for SRAM replacement; only relevant for full MCU substitution with firmware rewrite

Compared with IS61LV25616AL-12TQLI and MC68HC11E9CP, the CY7C1399BN-12VXCT provides exact 8-bit bus alignment, proven industrial reliability, and minimal layout impact-making it optimal for cost-sensitive, high-volume 8-bit embedded upgrades.

Availability

CY7C1399BN-12VXCT is available at Aetrix Electronics and suitable for industrial PLCs, automotive infotainment modules, and medical imaging subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1399BN-12VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1399BN belongs to Cypress's Fast Asynchronous SRAM family, engineered specifically for low-latency, low-power cache and buffer applications in resource-constrained embedded systems.

FAQ

What is the maximum clock frequency supported by CY7C1399BN-12VXCT?

The CY7C1399BN-12VXCT is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (12 ns) and cycle time (12 ns), allowing reliable operation with CPU buses running up to 83 MHz (1/12 ns) without wait states when control timing margins are met.

Does CY7C1399BN-12VXCT support battery backup operation?

Yes - the device retains data at VCC ≥ 2.0 V with ICCDR ≤ 20 µA, enabling integration into battery-backed SRAM circuits. External circuitry must hold VCC above 2.0 V during main power loss; no internal battery switch or monitoring is provided.

Can CY7C1399BN-12VXCT be used with 5 V tolerant microcontrollers?

No - it is strictly a 3.3 V-only device. Input voltages must remain within –0.5 V to VCC + 0.3 V (≤ 3.6 V). Direct connection to 5 V logic requires level-shifting on all address, control, and data lines to prevent damage and ensure valid VIH/VIL thresholds.

Is the SOJ package of CY7C1399BN-12VXCT RoHS-compliant?

Yes - the "X" suffix in the ordering code denotes Pb-free construction per RoHS Directive 2011/65/EU. The 28-pin SOJ package uses matte tin lead finish and complies with JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) for standard SMT assembly.

CY7C1399BN-12VXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

CY7C1399BN-12VXCT FAQ

1.How can I place an order for CY7C1399BN-12VXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1399BN-12VXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1399BN-12VXCT reliable?

The price and inventory of CY7C1399BN-12VXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1399BN-12VXCT is usually 5 days.

3.What payment methods are accepted for CY7C1399BN-12VXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1399BN-12VXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1399BN-12VXCT?

CY7C1399BN-12VXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1399BN-12VXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1399BN-12VXCT?

For technical support, including CY7C1399BN-12VXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1399BN-12VXCT requirements.

6.How does Aetrix verify that CY7C1399BN-12VXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1399BN-12VXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1399BN-12VXCT meets industry standards.

7.What is the process for return or replacement of CY7C1399BN-12VXCT?

All CY7C1399BN-12VXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1399BN-12VXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1399BN-12VXCT part is unused and in its original packaging.

Return procedure for CY7C1399BN-12VXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1399BN-12VXCT Tags

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