Infineon Technologies CY7C1399BN-12VXI

Overview

CY7C1399BN-12VXI from Cypress Semiconductor is a 256-Kbit (32 K × 8) high-speed CMOS static RAM with 3.3 V single-supply operation, 12 ns access time, industrial temperature range (–40 °C to +85 °C), and automatic CE-controlled power-down mode. It serves as cache or buffer memory in embedded controllers, network interface modules, and real-time data acquisition systems requiring deterministic low-latency read/write cycles.

For engineers reviewing the CY7C1399BN-12VXI datasheet, CY7C1399BN-12VXI pinout, CY7C1399BN-12VXI application, or CY7C1399BN-12VXI equivalent, key selection criteria include verified 12 ns tAA/tACE timing, 55 mA max ICC at fMAX, SOJ/TSOP-I package compatibility, and automatic standby current reduction to ≤5 µA under CE HIGH conditions.

Technical Context

The CY7C1399BN-12VXI implements a 32,768 × 8-bit array using low-power alpha-immune 6T SRAM cells, enabling reliable operation in electrically noisy industrial environments. Its dual active-Low control architecture-CE and OE-supports seamless memory expansion while maintaining tristate I/O integrity during deselection.

Timing behavior is defined by strict overlap requirements between CE and WE for write initiation, with tSCE = 8 ns (min) and tPD = 12 ns (max) for power-down entry. Read operations require CE and OE LOW while WE remains HIGH, delivering data valid within 12 ns of address or CE assertion.

Key Specifications

Pinout & Package

The CY7C1399BN-12VXI is available in 28-pin plastic TSOP-I (Type I) and SOJ packages. Both share identical pin functions and electrical characteristics; TSOP-I offers lower profile and improved thermal dissipation for space-constrained designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-12TLI and MC14LC5481DW, the CY7C1399BN-12VXI uniquely balances 12 ns speed, 3.3 V compatibility, and industrial-grade reliability in a pin-compatible 28-pin footprint-making it optimal for new designs targeting compact, low-power embedded memory subsystems.

Availability

CY7C1399BN-12VXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network packet buffers, and automotive ADAS preprocessing buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1399BN-12VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and communications markets, with emphasis on signal integrity and long-term manufacturability.

The CY7C1399BN belongs to Cypress's legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in resource-constrained embedded systems where power efficiency and thermal stability are critical.

FAQ

Is CY7C1399BN-12VXI pin-compatible with CY7C1399BN-15VXI?

Yes-both share identical 28-pin TSOP-I and SOJ footprints and pin functions. The only difference is guaranteed access time: 12 ns vs. 15 ns. Electrical characteristics including VCC tolerance, I/O drive strength, and standby current remain unchanged across speed grades.

Does CY7C1399BN-12VXI support battery-backed data retention?

No-it lacks built-in battery-switching circuitry or VBAT pins. However, its data retention current is specified at 20 µA max when VCC drops to 2.0 V, enabling external backup via supercapacitor or coin-cell with discrete diode OR-ing, provided CE remains asserted.

Can OE be left unconnected if outputs are always enabled?

No-OE must be actively driven LOW to enable outputs. Leaving OE floating risks undefined I/O states due to CMOS input sensitivity; worst-case leakage could cause bus contention or excessive ICC. A pull-down resistor (≤10 kΩ) is acceptable only if timing margins allow.

What is the maximum clock frequency supported for burst reads?

The device has no internal clock-it operates asynchronously. Maximum effective throughput is determined by tRC = 12 ns, yielding up to 83.3 MHz sustained read cycles. Burst performance depends entirely on external controller timing compliance with tAA, tOHA, and tHZOE specifications.