Infineon Technologies CY7C1399BN-12VXIT
- Part No.:
- CY7C1399BN-12VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
CY7C1399BN-12VXIT.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:811
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Product details
Overview
CY7C1399BN-12VXIT from Cypress Semiconductor is a 256-Kbit (32 K × 8) asynchronous CMOS static RAM with 3.3 V single-supply operation, 12 ns access time, industrial temperature range (–40 °C to +85 °C), and automatic CE-controlled power-down mode. It serves as cache or buffer memory in embedded controllers, network interface cards, and real-time data acquisition systems where low-latency read/write and standby current <5 µA are critical.
For engineers reviewing the CY7C1399BN-12VXIT datasheet, CY7C1399BN-12VXIT pinout, CY7C1399BN-12VXIT application, or CY7C1399BN-12VXIT equivalent, key selection criteria include verified 12 ns tAA/tACE timing, tristate I/O compatibility with 3.3 V logic families, CE/OE/WE control signal behavior under deselected conditions, and TSOP-I package thermal performance in convection-cooled PCB layouts.
Technical Context
The CY7C1399BN-12VXIT implements a fully decoded 32 K × 8 memory array using alpha-immune 6T SRAM cells, supporting asynchronous random-access reads and writes without clocking. Its dual active-Low enable architecture-CE for chip selection and OE for output gating-enables seamless memory expansion in multi-chip configurations.
Power management relies on automatic CE-driven power-down: when CE is HIGH, ICC drops to ≤5 µA (industrial grade) regardless of address or data bus activity, and outputs enter high-impedance state. Write operations require simultaneous LOW CE and LOW WE; read operations require LOW CE and LOW OE while WE remains HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 × 8 bits); supports byte-wide data path without external multiplexing |
| Access time (tAA) | 12 ns max; enables direct interfacing with 80 MHz microcontrollers without wait states |
| VCC supply | 3.3 V ± 300 mV; compatible with standard LVTTL and LVCMOS I/O domains |
| Standby current (ISB1) | ≤5 µA at industrial temp; eliminates need for external power gating in battery-backed systems |
| Operating temp | –40 °C to +85 °C; qualified for industrial control and automotive-A environments |
| Package | 28-pin TSOP-I (8.1 mm × 13.4 mm); surface-mount compatible with standard reflow profiles |
| Data retention voltage | 2.0 V min; maintains stored data during brown-out events down to 2 V VCC |
Pinout & Package
The CY7C1399BN-12VXIT is housed in a 28-pin Thin Small Outline Package (TSOP-I), 300-mil body width, lead pitch 0.55 mm, compliant with JEDEC MO-141BA. Pin 1 is marked by a beveled corner; package is Pb-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus; selects one of 32,768 memory locations; no internal latching |
| I/O0–I/O7 | Bidirectional data bus | 8-bit tristate I/O; driven only when CE = LOW and OE = LOW (read) or CE = WE = LOW (write) |
| CE | Chip Enable (active LOW) | Primary selection signal; disables outputs and activates auto power-down when HIGH |
| OE | Output Enable (active LOW) | Gates data output drivers; must be LOW for read access; ignored during write |
| WE | Write Enable (active LOW) | Controls direction of I/O bus; LOW enables write, HIGH enables read (with CE/OE asserted) |
| VCC | Power supply | 3.3 V core and I/O supply; decoupling capacitor required within 10 mm of pin |
| GND | Ground reference | Common return for all signals and power; separate ground plane recommended |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE power-down | Reduces ICC to ≤5 µA without external control logic or sleep-mode registers |
| Alpha-immune 6T cell | Ensures data integrity in radiation-prone environments such as industrial automation and transportation electronics |
| Tristate-compatible I/O | Meets 3.3 V LVTTL output drive specs (IOH = –2 mA, IOL = 4 mA) and input thresholds (VIH = 2.2 V, VIL = 0.8 V) |
| Low-capacitance pins | Input capacitance ≤5 pF (addresses), ≤6 pF (controls); minimizes signal loading on high-speed buses |
| Data retention at 2.0 V | Maintains valid contents during undervoltage lockout or backup-battery switchover sequences |
Applications
| Industrial PLC Memory Buffer | Network Interface Card Cache |
|---|---|
Use Scenario: Storing real-time I/O status and configuration registers in programmable logic controllers with cyclic scan times <10 ms. IC Role / Device Role / Timing Role: Byte-accessible SRAM providing zero-wait-state read/write for CPU register shadowing and firmware parameter storage. Use Value: 12 ns tAA ensures full register update within one CPU instruction cycle at 80 MHz; ISB1 ≤5 µA extends runtime during auxiliary power loss. | Use Scenario: Caching packet descriptors and DMA buffers in 10/100 Mbps Ethernet controller subsystems. IC Role / Device Role / Timing Role: Asynchronous buffer between MAC layer and host processor, synchronized via CE/OE handshaking. Use Value: Tristate I/O and 3.3 V compatibility eliminate level-shifting components; 28-pin TSOP-I footprint simplifies layout in space-constrained NIC designs. |
| Automotive Infotainment Boot ROM Shadow | Medical Imaging Data FIFO |
Use Scenario: Shadowing boot code and calibration tables in head-unit microcontrollers operating across –40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical startup vectors and sensor compensation coefficients during cold start. Use Value: Automotive-A qualification and 2.0 V data retention guarantee boot integrity during cranking-induced voltage sag below 2.5 V. | Use Scenario: Temporary storage of digitized ultrasound frame segments prior to DSP processing in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-reliability FIFO buffer accepting parallel 8-bit ADC output at up to 10 MHz sustained rate. Use Value: Alpha-immune cell design prevents soft errors in gamma-rich clinical environments; 12 ns access enables real-time pixel streaming without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-12IN | Same 32 K × 8 organization, 12 ns access, but uses 2.7–3.6 V supply range and lacks automotive qualification | Commercial-only temperature range (0 °C to +70 °C); not suitable for under-hood or industrial field deployments | Select if cost sensitivity outweighs extended temperature and automotive compliance requirements |
| IS61LV25616AL-12MLI | 16-bit bus width (256 K × 16), 12 ns access, 3.3 V supply, but requires different address/data multiplexing scheme | Higher density per pin count, but incompatible byte-level addressing without glue logic | Choose only when system architecture supports 16-bit data path and board redesign accommodates wider bus routing |
Compared with AS6C4008-12IN and IS61LV25616AL-12MLI, the CY7C1399BN-12VXIT uniquely combines industrial/automotive-A temperature support, true 8-bit bus interface, and sub-5 µA standby current-making it optimal for space-constrained, reliability-critical embedded systems requiring minimal BOM changes.
Availability
CY7C1399BN-12VXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network interface card caches, and automotive infotainment boot shadowing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1399BN-12VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.
The CY7C1399BN belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for low-voltage, low-power, high-speed buffering in resource-constrained embedded systems where deterministic timing and data retention under brown-out are mandatory.
FAQ
What is the maximum clock frequency supported by CY7C1399BN-12VXIT?
The CY7C1399BN-12VXIT is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by access time: 12 ns tAA and tACE specify the minimum interval between address assertion and valid data output. This supports effective interface rates up to approximately 83 MHz in ideal conditions, assuming no bus turnaround or setup/hold overhead.
Does CY7C1399BN-12VXIT require external pull-up resistors on control lines?
No external pull-ups are required on CE, OE, or WE. These inputs meet TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and have ≤1 µA leakage. However, floating control lines must be avoided-firmly tie unused lines to VCC or GND via PCB traces or FPGA I/O defaults to prevent metastability or unintended power-down activation.
Can CY7C1399BN-12VXIT operate reliably at 3.0 V VCC?
Per Electrical Characteristics table, CY7C1399BN-12VXIT is specified for 3.3 V ± 300 mV (i.e., 3.0 V to 3.6 V). At 3.0 V, all AC and DC parameters-including 12 ns access time, VOL ≤ 0.4 V, and ISB1 ≤5 µA-remain guaranteed across the full industrial temperature range, provided board-level decoupling meets datasheet recommendations.
Is the TSOP-I package of CY7C1399BN-12VXIT compatible with standard reflow soldering profiles?
Yes-the 28-pin TSOP-I package is rated for Pb-free reflow per JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤60 seconds, with ramp-up ≤3 °C/s and ramp-down ≤6 °C/s. Thermal mass considerations require preheating to 150 °C for ≥90 s before soak, and the package's moisture sensitivity level is MSL-3, requiring dry-pack handling if exposed >168 hours at ambient.
CY7C1399BN-12VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
CY7C1399BN-12VXIT FAQ
1.How can I place an order for CY7C1399BN-12VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1399BN-12VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1399BN-12VXIT reliable?
The price and inventory of CY7C1399BN-12VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1399BN-12VXIT is usually 5 days.
3.What payment methods are accepted for CY7C1399BN-12VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1399BN-12VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1399BN-12VXIT?
CY7C1399BN-12VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1399BN-12VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1399BN-12VXIT?
For technical support, including CY7C1399BN-12VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1399BN-12VXIT requirements.
6.How does Aetrix verify that CY7C1399BN-12VXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1399BN-12VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1399BN-12VXIT meets industry standards.
7.What is the process for return or replacement of CY7C1399BN-12VXIT?
All CY7C1399BN-12VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1399BN-12VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1399BN-12VXIT part is unused and in its original packaging.
Return procedure for CY7C1399BN-12VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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