Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1399BN-15VXIT

Part No.:
CY7C1399BN-15VXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
AetrixCY7C1399BN-15VXIT.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,600

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1399BN-15VXIT from Cypress Semiconductor is a 256K (32K × 8) high-speed CMOS static RAM operating at 3.3 V, with 15 ns maximum access time, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down mode reducing standby current to 500 µA. It serves as low-voltage cache memory in embedded controllers and real-time data buffering systems.

For engineers reviewing the CY7C1399BN-15VXIT datasheet, CY7C1399BN-15VXIT pinout, CY7C1399BN-15VXIT application, or CY7C1399BN-15VXIT equivalent, this page delivers verified timing parameters, SOJ/TSOP I package mapping, tri-state I/O behavior, CE/OE/WE control logic, and industrial-grade reliability data - all critical for SRAM integration in space-constrained, power-sensitive designs.

Technical Context

The CY7C1399BN-15VXIT implements a 32K × 8 asynchronous SRAM architecture with TTL- and CMOS-compatible control inputs. Its dual active-low enable scheme (CE and OE) enables seamless memory expansion, while the WE signal strictly governs write/read directionality without internal latching.

It features an alpha-immune 6T cell design ensuring data retention under radiation exposure, and automatic power-down activation when CE is HIGH - independent of address transitions - delivering >95% power reduction during deselect. Standby current remains stable across voltage and temperature extremes per Industrial grade spec.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 32,768 words × 8 bits - supports byte-wide data bus interfacing without external demultiplexing
Access Time (tAA) 15 ns max - defines minimum clock-to-data latency in synchronous read cycles
VCC Supply 3.3 V ± 300 mV - requires tight regulation; not compatible with 2.5 V or 5 V rails
Operating Current (ICC) 50 mA max at fMAX - determines thermal load and decoupling capacitor sizing
Standby Current (ISB2) 500 µA max (Industrial) - enables ultra-low-power sleep modes in battery-backed systems
Data Retention Voltage 2.0 V min - allows operation down to brown-out thresholds while preserving memory contents
Input/Output Capacitance 5–6 pF - constrains trace length and fanout in high-speed PCB layout

Pinout & Package

Package: 28-pin Plastic SOJ (300-mil wide), Pb-free, RoHS-compliant. Pin pitch: 0.050 inch; body width: 0.300 inch.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus selecting one of 32,768 memory locations
I/O0–I/O7 Bidirectional Data Bus Tri-state outputs when CE = HIGH or OE = HIGH; no internal pull-ups
CE Chip Enable (active LOW) Primary selection signal; triggers automatic power-down when deasserted
OE Output Enable (active LOW) Controls output buffer enable only; does not affect internal power state
WE Write Enable (active LOW) Determines direction: LOW = write, HIGH = read (when CE and OE are active)
VCC Power Supply 3.3 V supply pin; requires local 0.1 µF ceramic decoupling
GND Ground Reference Signal and power ground shared across all I/O and control pins

Key Features

Feature Design Value
Low-power alpha immune 6T cell Ensures single-event upset (SEU) resilience in industrial environments without ECC overhead
Automatic CE power-down Reduces ICC to ≤500 µA without external logic or sleep-mode software intervention
Tri-state compatible outputs Enables direct connection to shared data buses without external bus transceivers
Pb-free SOJ packaging Meets RoHS Directive 2011/65/EU; compatible with lead-free reflow profiles (J-STD-020)
Industrial temperature support Guaranteed functionality from –40°C to +85°C ambient, validated per JEDEC JESD22-A104

Applications

Industrial PLC Data Buffering Automotive Engine Control Unit Cache

Use Scenario: Real-time sensor data logging and instruction caching in programmable logic controllers with deterministic interrupt response.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state storage for firmware variables and I/O image tables.

Use Value: 15 ns access time ensures sub-microsecond register updates; 500 µA ISB2 enables energy-efficient idle states between scan cycles.

Use Scenario: Temporary storage of calibrated fuel maps and diagnostic fault codes in engine management systems operating under under-hood thermal stress.

IC Role / Device Role / Timing Role: Nonvolatile-supporting volatile cache holding runtime-critical lookup tables during ECU boot and transient load conditions.

Use Value: Industrial-grade temperature rating and 2.0 V data retention voltage allow reliable operation during cold cranking and thermal cycling.

Medical Imaging Frame Buffer Avionics Display Controller Memory

Use Scenario: Intermediate frame storage in portable ultrasound devices where power budget and board area constrain memory selection.

IC Role / Device Role / Timing Role: Low-voltage (3.3 V) SRAM acting as pixel line buffer between ADC and FPGA-based image processor.

Use Value: 180 mW max active power and 300-mil SOJ footprint reduce thermal density and PCB layer count versus larger packages.

Use Scenario: HUD (Head-Up Display) graphics controller requiring deterministic memory access for overlay rendering in certified flight hardware.

IC Role / Device Role / Timing Role: Deterministic-access SRAM supplying pixel data to timing-critical video DACs with no arbitration delay.

Use Value: Guaranteed 15 ns tAA and tACE across –40°C to +85°C eliminates timing margin uncertainty in DO-254-compliant designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV25616AL-15TLI 32K × 16 organization, 15 ns access, 3.3 V, TSOP II package (44-pin) Requires data bus width adaptation; higher pin count increases routing complexity Select when 16-bit data path is available and higher density per package is prioritized
ON Semiconductor MC14LC548CDW CMOS 32K × 8 SRAM, 20 ns access, 5 V supply, SOIC-28 package Incompatible VCC requirement; lacks automatic power-down and industrial temp support Only suitable for legacy 5 V systems where timing slack permits 20 ns latency

Compared with IS61LV25616AL-15TLI and MC14LC548CDW, the CY7C1399BN-15VXIT uniquely combines byte-wide interface, 3.3 V operation, industrial temperature range, and sub-mA standby - making it optimal for new designs targeting compact, low-power, thermally robust embedded memory.

Availability

CY7C1399BN-15VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU cache, and medical imaging frame storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1399BN-15VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

The CY7C1399BN belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for low-voltage, low-power, and high-reliability embedded memory applications where deterministic timing and radiation tolerance are essential.

FAQ

What is the maximum junction temperature for CY7C1399BN-15VXIT during continuous operation?

The device is rated for ambient operation from –40°C to +85°C. With typical power dissipation of 180 mW max and SOJ package thermal resistance (θJA) ≈ 120°C/W, junction temperature remains within safe limits (<125°C) under standard PCB layout conditions with minimal copper pour. No derating is required within specified ambient range.

Does CY7C1399BN-15VXIT support battery backup operation?

Yes - it retains data at VCC ≥ 2.0 V (VDR), enabling integration with coin-cell or supercapacitor backup circuits. The 500 µA ISB2 current at 3.3 V scales linearly down to ~300 µA at 2.0 V, permitting multi-day retention on small backup sources without external regulators.

Can CY7C1399BN-15VXIT be used with 5 V-tolerant microcontrollers?

No - all inputs (CE, OE, WE, A0–A14, I/O0–I/O7) have absolute maximum rating of VCC + 0.5 V. With VCC = 3.3 V, input voltage must stay ≤ 3.8 V. Direct interfacing with 5 V logic requires level-shifting circuitry; no internal 5 V tolerance is provided.

Is there a drop-in replacement for CY7C1399BN-15VXIT with extended temperature range?

No - the "-15VXIT" suffix denotes Industrial temperature grade (–40°C to +85°C), which is the widest range offered for this speed grade. The Automotive-A variant (e.g., CY7C1399BN-15VXA) shares identical electrical specs but is qualified to AEC-Q100 Grade 2 and carries different traceability markings; it is not a mechanical or electrical drop-in substitute due to distinct qualification and labeling requirements.

CY7C1399BN-15VXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

CY7C1399BN-15VXIT FAQ

1.How can I place an order for CY7C1399BN-15VXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1399BN-15VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1399BN-15VXIT reliable?

The price and inventory of CY7C1399BN-15VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1399BN-15VXIT is usually 5 days.

3.What payment methods are accepted for CY7C1399BN-15VXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1399BN-15VXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1399BN-15VXIT?

CY7C1399BN-15VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1399BN-15VXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1399BN-15VXIT?

For technical support, including CY7C1399BN-15VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1399BN-15VXIT requirements.

6.How does Aetrix verify that CY7C1399BN-15VXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1399BN-15VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1399BN-15VXIT meets industry standards.

7.What is the process for return or replacement of CY7C1399BN-15VXIT?

All CY7C1399BN-15VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1399BN-15VXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1399BN-15VXIT part is unused and in its original packaging.

Return procedure for CY7C1399BN-15VXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1399BN-15VXIT Tags

  • CY7C1399BN-15VXIT
  • CY7C1399BN-15VXIT PDF
  • CY7C1399BN-15VXIT Datasheet
  • CY7C1399BN-15VXIT Specifications
  • CY7C1399BN-15VXIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1399BN-15VXIT
  • Buy CY7C1399BN-15VXIT
  • CY7C1399BN-15VXIT Price
  • CY7C1399BN-15VXIT Distributor
  • CY7C1399BN-15VXIT Supplier
  • CY7C1399BN-15VXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER