Infineon Technologies CY7C1399BN-15ZXC

Overview

CY7C1399BN-15ZXC from Cypress Semiconductor is a 256K (32K × 8) high-speed CMOS static RAM operating at 3.3 V, with 15 ns maximum access time, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down reducing standby current to 500 µA. It features tri-state I/Os, TTL/CMOS-compatible inputs, and is packaged in a Pb-free 28-pin TSOP I (8 × 13.4 mm) for low-voltage cache memory applications in embedded controllers.

For engineers reviewing the CY7C1399BN-15ZXC datasheet, CY7C1399BN-15ZXC pinout, CY7C1399BN-15ZXC application, or CY7C1399BN-15ZXC equivalent, key selection criteria include access timing consistency across temperature, automatic power-down behavior under CE deassertion, I/O capacitance (6 pF), and compatibility with 3.3V-only system buses requiring deterministic read/write cycle control.

Technical Context

The CY7C1399BN-15ZXC implements a synchronous, address-decoded 32K × 8 SRAM array using low-power alpha-immune 6T cells. Its control logic relies on three active-low signals-CE, OE, and WE-with strict timing interdependencies: tACE = 15 ns, tDOE = 6 ns, and tPD = 15 ns define critical path delays during read and deselect transitions.

Power management is hardware-automated: when CE is HIGH, the device enters standby mode drawing ≤500 µA (industrial range), independent of address switching activity. Output drivers are fully tri-stated when CE or OE is HIGH, and data retention is guaranteed down to VCC = 2.0 V with ICCDR ≤ 20 µA.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package Type I (TSOP I), Pb-free, 8 mm × 13.4 mm body, 1.2 mm height, 0.55 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-15TQLI, CY7C1399BN-15ZXC offers direct 8-bit bus compatibility and smaller 28-pin TSOP I footprint; versus MC68HC11E9CP, it provides dedicated, expandable external memory with deterministic timing-critical for real-time buffering where on-chip RAM is insufficient or non-accessible.

Availability

CY7C1399BN-15ZXC is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive engine control unit caches, and medical diagnostic imaging FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1399BN-15ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for embedded systems.

The CY7C1399BN series belongs to Cypress's legacy high-speed asynchronous SRAM product line, designed specifically for low-voltage, low-power cache and buffer applications in industrial and automotive control systems.

FAQ

What is the minimum VCC required to retain data in CY7C1399BN-15ZXC?

Data retention is guaranteed down to VCC = 2.0 V, with maximum retention current ICCDR of 20 µA under those conditions. This allows use in brown-out scenarios where regulated 3.3 V drops temporarily, provided CE remains HIGH to enter retention mode and external backup capacitors sustain voltage for ≥100 ms.

Can CY7C1399BN-15ZXC operate with mixed 3.3 V and 5 V logic interfaces?

No. The device accepts only 3.3 V ± 300 mV on VCC and has VIH = 2.2 V min, VIL = 0.8 V max - it is not 5 V tolerant. Direct connection to 5 V logic risks damage; level translation (e.g., TXB0108) is mandatory for interfacing with 5 V microcontrollers or FPGAs.

Does CY7C1399BN-15ZXC require an external clock signal?

No. It is an asynchronous SRAM with no clock input. All operations are controlled by edge- and level-sensitive enable signals (CE, OE, WE). Timing is governed solely by propagation delays (e.g., tAA, tDOE) and does not depend on system clock frequency or phase alignment.

How does the automatic power-down feature behave when CE is toggled rapidly?

When CE transitions HIGH, the device enters standby within tPD = 15 ns and draws ≤500 µA. If CE returns LOW before internal power-down completes, the device resumes active operation without reset or latency penalty. No minimum CE HIGH pulse width is specified - even nanosecond glitches trigger partial power gating.