Infineon Technologies CY7C1399BN-15ZXI

Overview

CY7C1399BN-15ZXI from Cypress Semiconductor is a 256-Kbit (32 K × 8) high-speed CMOS static RAM operating at 3.3 V, featuring 15 ns access time, 50 mA max active current, and automatic CE-controlled power-down reducing standby current to 500 µA (industrial). It serves as low-voltage cache or buffer memory in embedded controllers and industrial communication modules.

For engineers reviewing the CY7C1399BN-15ZXI datasheet, CY7C1399BN-15ZXI pinout, CY7C1399BN-15ZXI application, or CY7C1399BN-15ZXI equivalent, key selection criteria include TSOP-I package compatibility, 3.3 V single-supply operation, 15 ns read cycle timing, and industrial temperature support (–40 °C to +85 °C).

Technical Context

The CY7C1399BN-15ZXI implements a 32,768 × 8 asynchronous SRAM array using low-power alpha-immune 6T cells. Its control logic relies on three independent active-low signals: Chip Enable (CE), Output Enable (OE), and Write Enable (WE), enabling flexible bus interfacing and memory expansion.

It supports full tristate I/O drivers with guaranteed 5 ns OE-to-output valid delay and 6 ns OE-to-high-Z transition. Automatic power-down activates when CE is HIGH, reducing ICC to ≤500 µA under industrial conditions without external circuitry.

Key Specifications

Pinout & Package

CY7C1399BN-15ZXI is housed in a 28-pin Thin Small Outline Package (TSOP-I), 300-mil wide, lead-free (Pb-free) construction per JEDEC MO-153AC. Pin functions are electrically validated per Cypress Document 001-06490 Rev. *I.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-15ZIN, CY7C1399BN-15ZXI uniquely balances 32 K × 8 byte-width, 15 ns timing, and sub-1 mA industrial standby-making it optimal for space-constrained, low-power embedded buffers where pin compatibility and deterministic power behavior are critical.

Availability

CY7C1399BN-15ZXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive telematics cache, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1399BN-15ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT systems, with headquarters in San Jose, CA.

CY7C1399BN belongs to Cypress's legacy low-voltage asynchronous SRAM product line, engineered specifically for deterministic timing, radiation-tolerant operation, and seamless integration into 3.3 V controller subsystems.

FAQ

Is CY7C1399BN-15ZXI pin-compatible with CY7C1399BN-15ZI?

Yes. The "X" suffix denotes lead-free (Pb-free) finish per JEDEC J-STD-609, while the base pinout, electrical behavior, and timing specifications remain identical to the non-X variant. Both use the same 28-pin TSOP-I footprint and share identical AC/DC characteristics per Document 001-06490 Rev. *I.

Does CY7C1399BN-15ZXI require external pull-up resistors on control lines?

No. All control inputs (CE, OE, WE, A0–A14) have internally biased TTL-compatible thresholds and do not require external pull-ups. However, I/O0–I/O7 must be externally terminated when used in high-noise environments per Cypress layout guidelines in Section 4.2 of the datasheet.

Can CY7C1399BN-15ZXI operate reliably at 3.0 V supply?

No. The device is specified only for 3.3 V ± 300 mV (3.0 V to 3.6 V) under commercial conditions, but industrial-grade operation requires minimum 3.0 V only at TA = 25 °C. At –40 °C, VCC must be ≥3.1 V to guarantee 15 ns access and 500 µA standby per Electrical Characteristics Table on Page 4.

What is the maximum junction temperature during continuous operation?

The absolute maximum junction temperature is +125 °C, derived from ambient rating (+85 °C) and thermal resistance θJA = 110 °C/W (TSOP-I package). With 50 mA active current and 3.3 V supply, typical power dissipation is 165 mW; maintaining θJA < 85 °C/W via copper pour keeps TJ < 115 °C under worst-case airflow.