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Infineon Technologies CY7C1399BN-20ZXC
- Part No.:
- CY7C1399BN-20ZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY7C1399BN-20ZXC.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,643
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Product details
Overview
CY7C1399BN-20ZXC from Cypress Semiconductor is a 256K (32K × 8) high-speed CMOS static RAM operating at 3.3 V, with 20 ns maximum access time, 45 mA max operating current, and automatic CE-controlled power-down reducing standby current to 500 µA (industrial range). It serves as low-voltage cache memory in embedded controllers and industrial communication modules.
For engineers reviewing the CY7C1399BN-20ZXC datasheet, CY7C1399BN-20ZXC pinout, CY7C1399BN-20ZXC application, or CY7C1399BN-20ZXC equivalent, key selection criteria include TSOP I package compatibility, 28-pin SOJ/TSOP pin mapping, industrial temperature support (–40°C to +85°C), and automatic power-down behavior under CE deassertion.
Technical Context
The CY7C1399BN-20ZXC implements a 32K × 8 asynchronous SRAM array using low-power alpha-immune 6T cells, supporting full read/write control via independent CE, OE, and WE inputs. Its tri-state I/O drivers and high-impedance output disable states enable direct bus interfacing without external buffers.
It features dual standby modes: TTL-compatible ISB1 (5 mA) and CMOS-compatible ISB2 (500 µA), with data retention down to 2.0 V and tCDR = 0 ns for immediate power-down entry. Address-to-data valid (tAA) and read cycle time (tRC) are both 20 ns at industrial temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32,768 words × 8 bits - supports byte-wide data bus interface without address decoding overhead |
| Access Time (tRC / tAA) | 20 ns - enables operation with 50 MHz bus clocks in non-pipelined systems |
| VCC Supply | 3.3 V ±300 mV - compatible with standard LVTTL and LVCMOS I/O domains |
| Operating Current (ICC) | 45 mA max - determines thermal budget for dense PCB layouts in industrial enclosures |
| Standby Current (ISB2) | 500 µA at industrial temp - allows >95% power reduction during idle cycles in battery-backed systems |
| Data Retention Voltage | 2.0 V min - permits graceful shutdown and low-power hold mode below nominal supply |
| Input/Output Capacitance | 5–6 pF - limits signal integrity degradation on high-speed address/data traces |
Pinout & Package
Package: 28-pin TSOP Type I (8 mm × 13.4 mm), Pb-free, RoHS-compliant, JEDEC MO-153 variant (51-85071).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus accepting 0x0000–0x7FFF; no internal latching - requires stable address before CE activation |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tri-state I/O lines; high-impedance when CE HIGH or OE HIGH and WE HIGH |
| CE | Chip Enable (active LOW) | Primary device select; initiates automatic power-down when HIGH, enabling ultra-low ISB2 standby |
| OE | Output Enable (active LOW) | Controls output driver enable only; does not affect internal power state or write blocking |
| WE | Write Enable (active LOW) | Directly gates write operation; overlapping LOW pulses with CE define write window per JEDEC SRAM timing |
| VCC | Power Supply | 3.3 V primary supply; decoupling required within 10 mm of pin per layout guidelines |
| GND | Ground Reference | Dedicated ground pin (Pin 15); must be connected to solid plane to minimize noise coupling into sense amps |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to 500 µA (ISB2) without external logic or sleep commands - simplifies power management firmware |
| Alpha-Immune 6T Cell | Ensures data integrity in radiation-prone industrial environments without requiring EDAC or refresh circuitry |
| Tri-State Output Drivers | Eliminates need for external bus transceivers in multi-SRAM or mixed-peripheral designs |
| Pb-Free TSOP I Package | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles - supports lead-free SMT assembly |
| Industrial Temperature Range | Guaranteed operation from –40°C to +85°C - validated across full voltage and timing margins per Rev. *A spec |
Applications
| Industrial PLC Memory Buffer | Automotive Telematics Cache |
|---|---|
Use Scenario: Stores real-time I/O scan data and configuration registers in programmable logic controllers with cyclic execution. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing deterministic 20 ns read latency for deterministic scan cycle timing. Use Value: Enables sub-100 µs I/O update cycles without DMA or cache coherency logic due to zero-wait-state access. | Use Scenario: Caches GPS position fixes and CAN message buffers in automotive telematics control units (TCUs) operating in extended temperature environments. IC Role / Device Role / Timing Role: Low-voltage (3.3 V), industrial-grade SRAM retaining data during cold-cranking voltage dips down to 2.0 V. Use Value: Maintains last-known location and diagnostic logs during engine start-up when main supply drops below 3.0 V. |
| Medical Diagnostic Imaging FIFO | Network Switch Packet Buffer |
Use Scenario: Buffers raw sensor data streams from ultrasound transducer arrays prior to FPGA-based beamforming. IC Role / Device Role / Timing Role: High-reliability SRAM with alpha-immune cell structure preventing soft errors in radiation-sensitive imaging environments. Use Value: Eliminates need for periodic memory scrubbing or ECC overhead in real-time acquisition pipelines. | Use Scenario: Implements small packet buffers in Layer 2 Ethernet switches handling 10/100 Mbps traffic with bursty ingress patterns. IC Role / Device Role / Timing Role: Asynchronous SRAM interfaced directly to MAC controller address/data bus with CE-driven power gating between frames. Use Value: Reduces average system power by 3.2 mW per buffer instance versus always-on alternatives, verified at 50% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-20TQLI | 16-bit bus (256K × 16), 20 ns, 3.3 V, 32-pin TSOP II; higher density but wider interface | Requires 16-bit data path redesign; unsuitable for existing 8-bit bus layouts | Select only if migrating to wider data paths and needing double the word depth per access |
| AS6C4008-20TIN | 8-bit bus (512K × 8), 20 ns, 3.3 V, 32-pin TSOP II; larger capacity but different pinout and timing tolerances | Not pin-compatible; CE/OE timing margins differ - requires PCB revision and timing validation | Consider for new designs where 512K capacity justifies layout change and qualification effort |
Compared with IS61LV25616AL-20TQLI and AS6C4008-20TIN, the CY7C1399BN-20ZXC offers verified 28-pin TSOP I footprint compatibility, guaranteed 20 ns timing at industrial temperature, and automatic CE power-down with no external control - making it optimal for drop-in replacement in legacy 8-bit microcontroller-based systems.
Availability
CY7C1399BN-20ZXC is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive telematics cache modules, and medical diagnostic imaging FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1399BN-20ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with focus on robustness and long-term supply stability.
The CY7C1399BN belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for low-voltage, high-speed cache and buffer applications in harsh-environment embedded systems requiring guaranteed timing and data retention.
FAQ
What is the minimum VCC required to retain data in CY7C1399BN-20ZXC?
Data retention is guaranteed down to 2.0 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤20 µA and tCDR = 0 ns - meaning the device enters retention mode immediately upon CE deassertion, with no delay or setup requirement. This enables use in brown-out scenarios where main supply collapses but backup rail sustains memory contents.
Does CY7C1399BN-20ZXC support concurrent read/write operations?
No. The CY7C1399BN-20ZXC is a single-port asynchronous SRAM with strictly sequential access: reads occur when CE and OE are LOW and WE is HIGH; writes require CE and WE both LOW. There is no dual-port or pipelined architecture. Simultaneous access attempts result in bus contention or undefined data, as confirmed by the Truth Table and functional description in Rev. *A datasheet.
Can CY7C1399BN-20ZXC be used with 5 V-tolerant microcontrollers?
Yes, but only with level translation on address/data/control lines. While the device operates at 3.3 V, its absolute maximum input voltage is VCC + 0.5 V = 3.8 V. Direct connection to 5 V logic violates the VIH/VIL specification and risks latch-up or accelerated wear. Cypress recommends using discrete resistors or dedicated level shifters (e.g., TXB0108) per the System Design Guidelines application note.
Is the TSOP I package of CY7C1399BN-20ZXC compatible with standard reflow profiles?
Yes. The Pb-free TSOP I package (51-85071) complies with JEDEC J-STD-020D moisture sensitivity level (MSL) 3 and peak reflow temperature of 260°C. Standard lead-free reflow profiles with ramp rates ≤3°C/s and time above liquidus (TAL) of 60–90 seconds are validated. Pre-bake at 125°C for 24 hours is required only if exposed >168 hours at >60% RH per MSL handling guidelines.
CY7C1399BN-20ZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
CY7C1399BN-20ZXC FAQ
1.How can I place an order for CY7C1399BN-20ZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1399BN-20ZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1399BN-20ZXC reliable?
The price and inventory of CY7C1399BN-20ZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1399BN-20ZXC is usually 5 days.
3.What payment methods are accepted for CY7C1399BN-20ZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1399BN-20ZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1399BN-20ZXC?
CY7C1399BN-20ZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1399BN-20ZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1399BN-20ZXC?
For technical support, including CY7C1399BN-20ZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1399BN-20ZXC requirements.
6.How does Aetrix verify that CY7C1399BN-20ZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1399BN-20ZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1399BN-20ZXC meets industry standards.
7.What is the process for return or replacement of CY7C1399BN-20ZXC?
All CY7C1399BN-20ZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1399BN-20ZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1399BN-20ZXC part is unused and in its original packaging.
Return procedure for CY7C1399BN-20ZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1399BN-20ZXC Tags
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M24C02-WMN6TP
STMicroelectronics
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Microchip Technology
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Microchip Technology
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