Infineon Technologies CY7C1399BNL-15ZXC

Overview

CY7C1399BNL-15ZXC from Cypress Semiconductor is a 256K (32K × 8) high-speed CMOS static RAM operating at 3.3 V, with 15 ns maximum access time, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down mode reducing standby current to 500 µA. It serves as low-voltage cache or buffer memory in embedded controllers and real-time data acquisition systems.

For engineers reviewing the CY7C1399BNL-15ZXC datasheet, CY7C1399BNL-15ZXC pinout, CY7C1399BNL-15ZXC application, or CY7C1399BNL-15ZXC equivalent, key selection criteria include access timing consistency across temperature, TTL/CMOS input compatibility, tri-state I/O behavior during deselection, and Pb-free TSOP I package suitability for space-constrained PCB layouts.

Technical Context

The CY7C1399BNL-15ZXC implements a 32K × 8 asynchronous SRAM array using alpha-immune 6T cells, supporting independent read/write control via active-low CE, OE, and WE signals. Its dual power-down modes-TTL- and CMOS-input variants-enable sub-1 mA standby current under industrial conditions.

Timing is defined by overlapping CE and WE assertions for write cycles, with address-to-data valid (tAA) and read cycle time (tRC) both guaranteed ≤15 ns. Output enable delay (tDOE = 6 ns) and high-impedance transition times (tHZOE = 6 ns, tHZCE = 7 ns) ensure clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package Type I (TSOP I), 8 mm × 13.4 mm body, 0.55 mm pitch, Pb-free termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV25616AL-15TQLI and MCM62C256B-15N, the CY7C1399BNL-15ZXC uniquely delivers Pb-free TSOP I packaging, industrial/Automotive-A qualification, and dual-mode (TTL/CMOS) standby current optimization-making it optimal for new designs requiring compact size, regulatory compliance, and extended temperature reliability.

Availability

CY7C1399BNL-15ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive engine control unit caching, and medical diagnostic imaging FIFO applications requiring stable component supply across long production lifecycles.

Supply support for CY7C1399BNL-15ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and automotive markets.

The CY7C1399B series was designed specifically for low-voltage, high-speed cache and buffer applications in resource-constrained embedded systems requiring deterministic timing and extended temperature operation.

FAQ

What is the minimum VCC required for data retention on CY7C1399BNL-15ZXC?

Data retention is guaranteed down to VCC = 2.0 V, with maximum retention current ICCDR of 20 µA at that voltage. This enables use with backup batteries or supercapacitors in holdover scenarios, provided CE remains asserted above VCC – 0.3 V and all inputs are held at valid logic levels.

Does CY7C1399BNL-15ZXC support true 3.3 V-only operation without level shifters?

Yes. All DC input thresholds (VIH = 2.2 V min, VIL = 0.8 V max) and output drive levels (VOH = 2.4 V min at –2 mA, VOL = 0.4 V max at 4 mA) comply fully with 3.3 V LVTTL and LVCMOS specifications, eliminating need for external level translation in compatible host systems.

How does the automatic power-down feature behave when CE is HIGH but WE and OE are floating?

When CE is HIGH, the device enters power-down regardless of WE/OE states. Input leakage (IIX ≤ ±1 µA) and standby current (ISB2 ≤ 500 µA) remain within spec even with CMOS inputs floating, due to internal weak pull-downs on control pins-no external biasing is required.

Can CY7C1399BNL-15ZXC be used in place of CY7C1399BN-15ZC in existing designs?

Yes-CY7C1399BNL-15ZXC is the Pb-free variant of CY7C1399BN-15ZC, sharing identical AC/DC electrical specs, timing, pinout, and thermal characteristics. The "L" suffix denotes enhanced data retention capability (VDR = 2.0 V), but functional compatibility is 100% maintained for all standard SRAM operations.