Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1412AV18-167BZC

Part No.:
CY7C1412AV18-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1412AV18-167BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,903

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1412AV18-167BZC from Cypress Semiconductor is a 36-Mbit QDR-II™ SRAM with 2M × 18 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, 2-word burst transfers per access, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1412AV18-167BZC datasheet, CY7C1412AV18-167BZC pinout, CY7C1412AV18-167BZC application, or CY7C1412AV18-167BZC equivalent, key selection criteria include its 165-ball FBGA package, dual-clock timing architecture (K/K and C/C), HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, and DLL-based data alignment for sub-nanosecond timing control.

Technical Context

The CY7C1412AV18-167BZC uses synchronous pipelined QDR-II architecture with physically independent read and write data paths-no bus turnaround required. Its 2M × 18 memory array is accessed via a shared 20-bit address bus latched on rising edges of K (read) and K (write) clocks.

Read data is output on Q[17:0] synchronized to C and C clocks, with echo clocks CQ/CQ aligned to output clock edges for receiver deskew. Write operations use on-chip self-timed logic, and byte write selects BWS[1:0] enable partial writes without disturbing unselected 9-bit bytes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density36 Mbit (2M × 18 organization)
Max Clock Frequency167 MHz - defines maximum sustained transaction rate of 334 MT/s (DDR)
Core Supply Voltage1.8 V ±0.1 V - powers internal logic and array; strict tolerance ensures stable timing margins
I/O Supply RangeVDDQ = 1.4 V to 1.8 V - supports HSTL Class I/II signaling and interface voltage translation
Burst Length2-word burst - delivers 36 bits per read/write cycle, optimizing bandwidth efficiency
Output InterfaceDouble Data Rate (DDR) on Q[17:0] - transfers data on both rising edges of C/C clocks
Timing ControlIntegrated Delay Lock Loop (DLL) - aligns CQ/CQ and Q[17:0] output edges to ±50 ps accuracy

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0]Synchronous write data inputsLatched on rising edge of K clock; 18-bit parallel input path for write port
Q[17:0]Synchronous read data outputsDriven on rising edges of C and C clocks; tri-stated when RPS is deasserted
RPSRead port select (active LOW)Enables read access; sampled on rising edge of K; initiates 2-word burst read
WPSWrite port select (active LOW)Enables write access; sampled on rising edge of K; triggers self-timed write sequence
BWS[1:0]Byte write select (active LOW)Selects two 9-bit bytes for write; BWS0 controls D[8:0], BWS1 controls D[17:9]
K / KPositive/negative input clocksRising edges latch all synchronous inputs (address, control, data); K used for read address, K for write address
C / CPositive/negative output clocksDrive Q[17:0] and CQ/CQ; enable flight-time deskew across multi-device memory subsystems
CQ / CQEcho clocksFree-running, DLL-synchronized copies of C/C; simplify source-synchronous capture at controller
ZQOutput impedance calibration inputConnects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω PCB traces
VREFHSTL reference voltageStatic bias point for input threshold and output level setting; must be supplied externally at 0.75 × VDDQ

Key Features

Feature Design Value
Separate read/write portsEliminates bus turnaround overhead and enables true concurrent read/write transactions
2-word DDR burstDelivers 36 bits per clock cycle on both ports, achieving 1.2 Gbps effective bandwidth at 167 MHz
Integrated DLLCompensates for process/voltage/temperature drift to maintain <100 ps output skew across all 18 data lines
JTAG 1149.1 supportEnables boundary-scan testing and in-system debug without requiring additional test fixtures
Variable-drive HSTL outputsConfigurable drive strength via ZQ calibration ensures signal integrity on long, loaded backplane traces

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-100 ns latency requirements.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM serving as dual-port buffer between ingress parser and egress scheduler engines.

Use Value: Concurrent read/write capability eliminates arbitration stalls, enabling line-rate forwarding at 10 Gbps+ with deterministic 2-cycle access latency.

Use Scenario: Implementing distributed lookup tables and forwarding databases in modular chassis-based routers.

IC Role / Device Role / Timing Role: High-bandwidth memory node in crossbar-connected fabric, interfacing with multiple ASICs via source-synchronous DDR links.

Use Value: Echo clocks (CQ/CQ) and DLL alignment allow reliable 167 MHz operation across 12+ inch PCB traces without retiming logic.

Baseband Processing Buffer Real-Time Video Frame Store

Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation results in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Low-latency, burst-oriented memory for FFT/IFFT pipeline staging between DSP cores and RF front-end controllers.

Use Value: 2-word burst mode matches natural 16/32-bit processing word sizes, reducing address overhead and improving DMA efficiency.

Use Scenario: Intermediate frame storage between video encoder and display controller in broadcast-grade encoders.

IC Role / Device Role / Timing Role: Dual-port buffer decoupling asynchronous encode and display timing domains while maintaining pixel-perfect synchronization.

Use Value: Full data coherency guarantees most recent written pixel data is always available on read, preventing visual artifacts during rapid scene changes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1412AV18-200BZCHigher max frequency (200 MHz), higher operating current (870 mA), identical pinout and functionalitySupports 200 MHz system clocks; requires tighter power delivery and thermal managementSelect when system timing budget demands >167 MHz operation and board layout accommodates increased power density
AS7C336200B-167BINSame 2M × 18 density and 167 MHz rating but uses standard QDR-II+ architecture without echo clocks or ZQ calibrationLacks CQ/CQ and ZQ pins; relies on external deskew and fixed drive strengthChoose for cost-sensitive designs where board-level timing margin allows omission of DLL and impedance tuning features

Compared with CY7C1412AV18-200BZC, the -167BZC reduces power by ~15% at same voltage while retaining full feature set; versus AS7C336200B-167BIN, it provides superior signal integrity control via DLL-aligned echo clocks and programmable output impedance-critical for >1 Gbps trace lengths.

Availability

CY7C1412AV18-167BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, baseband processing buffers, and real-time video frame stores requiring stable component supply across extended production lifecycles.

Supply support for CY7C1412AV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

The QDR-II SRAM product line targets applications demanding deterministic low-latency, concurrent memory access-especially in networking infrastructure where bus turnaround overhead directly impacts throughput and jitter.

FAQ

What is the minimum VDDQ voltage supported for CY7C1412AV18-167BZC?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause HSTL input threshold violations or reduced output drive strength. The 1.4 V lower limit ensures compatibility with HSTL Class I specifications and maintains adequate noise margin for 167 MHz DDR signaling.

Can CY7C1412AV18-167BZC operate in single-clock mode using only K and K?

Yes. When C and C are tied to K and K respectively, the device operates in single-clock mode. In this configuration, Q[17:0] and CQ/CQ are driven on rising edges of K/K, eliminating need for separate output clocks-but echo clock deskew capability is lost, limiting usable trace length to ≤3 inches.

How does the ZQ pin affect output impedance calibration?

ZQ connects to an external resistor (typically 240 Ω) to ground, establishing a reference for internal termination resistors. This calibrates Q[17:0], CQ, and CQ output drivers to 0.2 × RQ (≈48 Ω), matching standard 50 Ω PCB traces. Leaving ZQ floating or tying to GND disables calibration and risks signal reflection.

Is DOFF pin required to be asserted for normal operation?

No. DOFF must be held HIGH (tied to VDDQ) for normal DLL-enabled operation. Asserting DOFF LOW disables the DLL, causing CQ/CQ and Q[17:0] timing to shift by up to 1.5 ns and violating AC timing specs-this mode is only for debug or DLL failure recovery, not production use.

CY7C1412AV18-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1412AV18-167BZC FAQ

1.How can I place an order for CY7C1412AV18-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1412AV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1412AV18-167BZC reliable?

The price and inventory of CY7C1412AV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412AV18-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1412AV18-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412AV18-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1412AV18-167BZC?

CY7C1412AV18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1412AV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1412AV18-167BZC?

For technical support, including CY7C1412AV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412AV18-167BZC requirements.

6.How does Aetrix verify that CY7C1412AV18-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1412AV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412AV18-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1412AV18-167BZC?

All CY7C1412AV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412AV18-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1412AV18-167BZC part is unused and in its original packaging.

Return procedure for CY7C1412AV18-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1412AV18-167BZC Tags

  • CY7C1412AV18-167BZC
  • CY7C1412AV18-167BZC PDF
  • CY7C1412AV18-167BZC Datasheet
  • CY7C1412AV18-167BZC Specifications
  • CY7C1412AV18-167BZC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1412AV18-167BZC
  • Buy CY7C1412AV18-167BZC
  • CY7C1412AV18-167BZC Price
  • CY7C1412AV18-167BZC Distributor
  • CY7C1412AV18-167BZC Supplier
  • CY7C1412AV18-167BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER