Infineon Technologies CY7C1412AV18-200BZC
- Part No.:
- CY7C1412AV18-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1412AV18-200BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1412AV18 from Cypress Semiconductor is a 36-Mbit QDR-II™ SRAM with 2M × 18 organization, 250 MHz clock operation, DDR interfaces on independent read/write ports, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers 500 MT/s data transfer rate per port and supports concurrent burst reads/writes in high-bandwidth networking and packet buffering applications.
For engineers reviewing the CY7C1412AV18 datasheet, CY7C1412AV18 pinout, CY7C1412AV18 application, or CY7C1412AV18 equivalent, this device is selected for synchronous pipelined memory subsystems requiring zero-bus-turnaround, full data coherency, precise DDR timing via dual echo clocks (CQ/CQ), and HSTL-compatible 1.4–1.8 V I/O operation.
Technical Context
The CY7C1412AV18 implements QDR-II architecture with physically separate read and write data paths-D[17:0] inputs and Q[17:0] outputs-eliminating bus contention and turn-around delays. Address latching uses shared A[19:0] bus synchronized to rising edges of K (read) and K (write) clocks.
Output timing is controlled by C/C clocks with echo clocks CQ/CQ referenced to C/C, enabling skew-compensated data capture. Internal DLL ensures accurate data placement, while BWS[1:0] enables byte-selective writes across two 9-bit lanes, preserving unselected data during partial writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 organization) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Data Bus Width | 18-bit bidirectional I/O (D[17:0]/Q[17:0]) with HSTL-18 compatibility |
| Core Supply Voltage | VDD = 1.8 V ±0.1 V - defines internal logic timing and power envelope |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - sets output drive strength and input threshold for HSTL interface |
| Burst Length | 2-word burst - delivers two sequential 18-bit words per access cycle |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-pin-count, high-speed routing with controlled impedance |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, RoHS-compliant lead-free option available. Pin layout optimized for signal integrity in high-speed DDR memory subsystems with dedicated echo clocks, impedance control (ZQ), and JTAG test access.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous Write Data Input | Latched on rising edge of K clock; 18-bit parallel input path for write operations |
| Q[17:0] | Synchronous Read Data Output | Driven on rising edges of C/C clocks; tri-stated when RPS inactive |
| A[19:0] | Multiplexed Address Input | Shared address bus latched separately on K (read) and K (write) rising edges |
| RPS / WPS | Read/Write Port Select | Active-low synchronous enables; deassertion tri-states outputs or ignores D[17:0] |
| BWS[1:0] | Byte Write Select | Active-low controls two 9-bit lanes; preserves unselected bytes during partial writes |
| C / C, CQ / CQ | Output Clocks & Echo Clocks | C/C drive Q[17:0]; CQ/CQ are phase-aligned echoes simplifying controller data capture |
| ZQ | Impedance Calibration Input | Connects to external resistor to ground to tune output driver impedance to 0.2×RQ |
| TCK/TMS/TDI/TDO | JTAG Boundary Scan Interface | IEEE 1149.1 compliant test access port for production and debug verification |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turn-around overhead and enables true concurrent access without arbitration delay |
| 2-Word DDR Burst Architecture | Delivers 36 bits per clock cycle (18-bit × 2) at 500 MT/s, doubling effective bandwidth vs. single-data-rate |
| Delay-Locked Loop (DLL) | Aligns internal data launch to output clock edges, reducing setup/hold timing margin requirements |
| HSTL-18 Compatible I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength, ensuring signal integrity on high-speed PCB traces |
| Full Data Coherency | Guarantees most recently written data is returned on subsequent reads, critical for real-time packet processing |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM serving as line-rate buffer with simultaneous header lookup (read) and payload write. Use Value: 250 MHz clock + 2-word burst delivers 9 Gbps aggregate bandwidth, matching 10GbE line rates without pipeline stalls. |
Use Scenario: Interconnecting crossbar switch elements in telecom core routers with deterministic latency. IC Role / Device Role / Timing Role: Synchronous memory node providing non-blocking read/write access between switch stages. Use Value: Independent ports and echo clocks (CQ/CQ) enable sub-nanosecond skew control across 16+ devices in parallel topology. |
| Baseband Processing Buffer | Real-Time Video Frame Store |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE eNodeB. IC Role / Device Role / Timing Role: Low-latency, pipelined memory staging intermediate results with strict timing alignment. Use Value: DLL-controlled output timing and 1.8 V core reduce jitter-induced bit errors in 20 MHz channel bandwidth processing. |
Use Scenario: Holding uncompressed 1080p YUV422 frames for real-time color space conversion and scaling in broadcast encoders. IC Role / Device Role / Timing Role: High-throughput frame buffer supporting simultaneous write (sensor input) and read (processing engine). Use Value: 18-bit bus width matches chroma/luma packing; 2-word burst aligns with 16-pixel macroblock transfers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-200BIN | 200 MHz max frequency; 36-Mbit (2M × 18); no echo clocks or DLL; SSTL-18 I/O only | Lacks CQ/CQ and DLL - requires tighter board-level timing closure and higher controller margin | Select when cost sensitivity outweighs need for skew-tolerant timing and lower jitter in multi-device systems |
| IS61WV102418BLL-200BLI | 200 MHz; 18-Mbit (512K × 36); asynchronous reset; no JTAG; no ZQ calibration | Lower density and no impedance tuning - limits scalability in large buffer pools and high-speed routing | Prefer for legacy designs where pin compatibility with older IS61WV series is required and bandwidth < 7.2 Gbps suffices |
Compared with AS7C362000B-200BIN and IS61WV102418BLL-200BLI, the CY7C1412AV18 provides higher bandwidth (9 Gbps vs. ≤7.2 Gbps), integrated DLL and echo clocks for robust timing, and ZQ-based output impedance control-critical for maintaining signal integrity in dense, multi-SRAM memory subsystems.
Availability
CY7C1412AV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, baseband processing buffers, and real-time video frame stores requiring stable component supply across extended production lifecycles.
Supply support for CY7C1412AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.
The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking infrastructure, where concurrent read/write, DDR burst efficiency, and deterministic timing are mandatory.
FAQ
What is the minimum VDDQ voltage supported for CY7C1412AV18 operation?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed: HSTL-18 input thresholds and output drive strength fall outside specification, risking setup/hold violations and reduced noise margin. Always maintain VDDQ ≥ 1.4 V for functional compliance per datasheet Rev. *C.
Can CY7C1412AV18 operate without connecting the ZQ pin?
No. ZQ must be connected either to an external resistor to ground (for impedance calibration) or directly to VDDQ (to enable minimum output impedance mode). Leaving ZQ floating or tied to VSS violates absolute maximum ratings and causes undefined output driver behavior, including excessive current draw or signal distortion.
How does the DLL affect timing parameters when enabled versus disabled?
With DLL enabled, tAC (address-to-output) and tDOH (data hold after C/C) meet specified values (e.g., tAC = 2.4 ns @ 250 MHz). When DOFF = LOW (DLL disabled), tAC increases to ~3.8 ns and tDOH degrades significantly - requiring controller re-timing and reducing system margin. DLL must remain enabled for datasheet-compliant operation.
Is CY7C1412AV18 pin-compatible with other devices in the CY7C14xxAV18 family?
No. While all share the same 165-ball FBGA footprint, pin functions differ across configurations: CY7C1410AV18 uses NWS[1:0], CY7C1425AV18 uses BWS[0], CY7C1412AV18 uses BWS[1:0], and CY7C1414AV18 uses BWS[3:0]. Signal mapping, address width (A[19:0] vs A[20:0]), and data width (18-bit vs 8/9/36-bit) are not interchangeable.
CY7C1412AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1412AV18-200BZC FAQ
1.How can I place an order for CY7C1412AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1412AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1412AV18-200BZC reliable?
The price and inventory of CY7C1412AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412AV18-200BZC is usually 5 days.
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Once your CY7C1412AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1412AV18-200BZC?
For technical support, including CY7C1412AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1412AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1412AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1412AV18-200BZC?
All CY7C1412AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1412AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1412AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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