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Infineon Technologies CY7C1412BV18-167BZC

Part No.:
CY7C1412BV18-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1412BV18-167BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,787

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Product details

Overview

CY7C1412BV18-167BZC from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 2M × 18 organization, 167 MHz maximum operating frequency, 1.8 V core supply (VDD), 1.4–1.8 V I/O supply (VDDQ), and 165-ball FBGA package. It implements dual independent read/write ports with DDR interfaces, 2-word burst architecture, and DLL-enabled 1.5-cycle read latency - deployed in high-speed network packet buffers and switch fabric memory subsystems.

For engineers reviewing the CY7C1412BV18-167BZC datasheet, CY7C1412BV18-167BZC pinout, CY7C1412BV18-167BZC application, or CY7C1412BV18-167BZC equivalent, key selection criteria include burst timing compliance, echo clock (CQ/CQ) synchronization for data capture, HSTL-18 output drive matching, DLL on/off mode behavior, and depth expansion via RPS/WPS port selects.

Technical Context

The CY7C1412BV18-167BZC uses a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround and enabling concurrent access. Its dual-clock domain employs K/K for address/data input latching and C/C for output timing, with echo clocks CQ/CQ referenced to C/C for skew-compensated data capture at 500 MT/s.

Internally organized as two 1M × 18 arrays, it supports 2-word bursts per access, 1.5-cycle read latency with DLL enabled (or 1-cycle in DLL-off mode), and byte-write select (BWS[1:0]) for selective 9-bit sub-word writes. All control signals (RPS, WPS, BWS) are registered on K/K rising edges, ensuring deterministic setup/hold timing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 configuration)
Max Clock Frequency 167 MHz - defines maximum sustained throughput of 334 MT/s per port
Data Rate 500 MT/s - achieved via DDR interface on both read and write ports
Read Latency 1.5 cycles (DLL enabled) or 1 cycle (DLL disabled via DOFF = LOW)
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - enables HSTL-18 compatibility
Package 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing and thermal dissipation in switch ASIC interfaces
Interface Standard HSTL-18 Class I outputs with ZQ impedance calibration - ensures signal integrity on 50 Ω transmission lines

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AB footprint.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; supports 18-bit parallel writes with BWS[1:0] byte masking
Q[17:0] Synchronous read data outputs Driven on rising edges of C/C; tristated automatically when RPS is deasserted
RPS, WPS Active-low port select controls Enable independent read/write transactions; allow depth expansion without external logic
BWS[1:0] Byte write select inputs Mask D[8:0] (BWS0) and D[17:9] (BWS1); enable partial-word writes without read-modify-write overhead
K, K Positive/negative input clocks Capture all synchronous inputs (address, data, control); define write initiation timing
C, C Positive/negative output clocks Control Q[17:0] output timing; used with CQ/CQ for flight-time deskewing in multi-device systems
CQ, CQ Output echo clocks Free-running, phase-aligned copies of C/C; simplify source-synchronous data capture at controller
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground; calibrates output driver strength to match 50 Ω bus
DOFF DLL disable control Pull LOW to disable Delay Lock Loop and operate in QDR I mode (1-cycle latency, ≤167 MHz)
TCK/TMS/TDI/TDO JTAG boundary-scan interface Support IEEE 1149.1 test access for production verification and system-level debug

Key Features

Feature Design Value
Independent Read/Write Ports Eliminates bus turnaround delays and contention, enabling full-duplex memory access in packet processing pipelines
2-Word Burst Architecture Delivers 36 bits per access cycle (2 × 18-bit words), doubling effective bandwidth over single-word devices
Echo Clocks (CQ/CQ) Provide source-synchronous timing references aligned to C/C edges, reducing setup/hold margin requirements at 500 MT/s
Variable Drive HSTL Outputs ZQ-calibrated drivers maintain consistent 50 Ω output impedance across voltage/temperature, minimizing signal reflections
DLL-Enabled Timing Precision Delay Lock Loop aligns internal data paths to achieve 1.5-cycle read latency with <±50 ps jitter tolerance

Applications

Network Packet Buffer Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking, low-latency buffer between ingress parser and egress scheduler engines.

Use Value: Concurrent read/write eliminates arbitration stalls, sustaining 500 MT/s throughput required for 10 Gbps line-rate forwarding.

Use Scenario: Interfacing with multi-lane SerDes-based switch ASICs requiring burst-aligned memory access.

IC Role / Device Role / Timing Role: High-bandwidth memory node in crossbar interconnect fabric, synchronized to ASIC's K/C clock domains.

Use Value: Echo clocks (CQ/CQ) enable precise data capture at ASIC receiver, reducing timing closure effort by >30% vs. asynchronous interfaces.

Telecom Line Card Buffer High-Speed Test Equipment Memory

Use Scenario: Temporary storage of ATM cell payloads or OTN frame segments in carrier-grade line cards.

IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic 1.5-cycle latency for time-critical traffic shaping and policing functions.

Use Value: DLL-on mode guarantees sub-3 ns read access jitter, meeting ITU-T G.8262 PRC timing stability requirements.

Use Scenario: Pattern generation and response capture in automated test equipment (ATE) for high-speed serial interfaces.

IC Role / Device Role / Timing Role: Synchronized waveform memory staging data for DACs and sampling results from ADCs in real time.

Use Value: Independent RPS/WPS allows simultaneous stimulus load and result capture without pipeline stalls, improving test throughput by 2.1×.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit QDR II+, 100 MHz max, 1.5 V core, 165-BGA but different pinout and no ZQ calibration Lower speed grade; lacks echo clocks and impedance tuning - requires external termination Select only if system clock ≤100 MHz and board layout cannot accommodate CQ/CQ routing
ISSI IS61WV102418B 18-Mbit sync SRAM, single-port, 166 MHz, 3.3 V only, no DDR or burst - not functionally equivalent Cannot support concurrent read/write; unsuitable for QDR-based switch fabric designs Not recommended as direct alternative; consider only for legacy cost-sensitive non-burst applications

Compared with IDT72T3615L10PA and IS61WV102418B, the CY7C1412BV18-167BZC uniquely delivers 167 MHz QDR II operation with echo clocks, ZQ calibration, and true dual-port concurrency - essential for modern packet buffer and switch fabric implementations where timing precision and bandwidth density are critical.

Availability

CY7C1412BV18-167BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card design, and high-speed test equipment development requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C1412BV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications, industrial, and automotive markets.

The CY7C1412BV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in networking and telecommunications infrastructure where deterministic burst access and DDR timing integrity are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1412BV18-167BZC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced timing margins, supporting reliable operation up to 167 MHz without DLL calibration. In normal operation, DOFF must be tied HIGH via ≤10 kΩ pull-up to enable DLL-based 1.5-cycle latency and tighter jitter control.

How does the ZQ pin affect output driver performance?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of Q[17:0], CQ, and CQ pins to 50 Ω (0.2 × RQ). This ensures consistent signal integrity across voltage and temperature variations. Connecting ZQ directly to VDDQ enables minimum-impedance mode; leaving it unconnected or tying to GND violates specification and may cause output instability.

Can CY7C1412BV18-167BZC be used in single-clock mode?

Yes - the device supports single-clock mode where K and C are driven by the same clock source, and K and C are tied together. In this configuration, all input registers use K/K and all output registers use C/C (i.e., K/K), simplifying clock distribution at the cost of reduced skew compensation capability. Timing parameters shift accordingly, and echo clocks CQ/CQ track K/K instead of C/C.

What is the purpose of BWS[1:0] in write operations?

BWS[1:0] are active-low byte write select signals that control which 9-bit sub-word of D[17:0] is written during each half of the 2-word burst. BWS0 enables D[8:0]; BWS1 enables D[17:9]. When either is deasserted, the corresponding byte remains unchanged - enabling efficient read-modify-write sequences without full-word reads or external logic.

CY7C1412BV18-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1412BV18-167BZC FAQ

1.How can I place an order for CY7C1412BV18-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1412BV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1412BV18-167BZC reliable?

The price and inventory of CY7C1412BV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412BV18-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1412BV18-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412BV18-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1412BV18-167BZC?

CY7C1412BV18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1412BV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1412BV18-167BZC?

For technical support, including CY7C1412BV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412BV18-167BZC requirements.

6.How does Aetrix verify that CY7C1412BV18-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1412BV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412BV18-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1412BV18-167BZC?

All CY7C1412BV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412BV18-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1412BV18-167BZC part is unused and in its original packaging.

Return procedure for CY7C1412BV18-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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