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Infineon Technologies CY7C1412BV18-200BZI

Part No.:
CY7C1412BV18-200BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1412BV18-200BZI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,240

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Product details

Overview

CY7C1412BV18-200BZI from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 2M × 18 organization, 250 MHz clock support (200 MHz rated), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces on both, 2-word burst transfers, and DLL-enabled 1.5-cycle read latency. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1412BV18-200BZI datasheet, CY7C1412BV18-200BZI pinout, CY7C1412BV18-200BZI application, or CY7C1412BV18-200BZI equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted data capture timing, HSTL-18 output drive, JTAG 1149.1 testability, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1412BV18-200BZI uses synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch, enabling concurrent read/write operations without bus turnaround. Its Delay Lock Loop (DLL) aligns echo clocks CQ/CQ to output clocks for precise DDR data sampling at 500 MT/s.

It supports two operating modes: DLL-on mode (1.5-cycle read latency, up to 250 MHz) and DLL-off mode (1-cycle latency, QDR I timing, max 167 MHz). Address inputs are multiplexed across both ports, with RPS/WPS controlling port activation and BWS[1:0] enabling byte-selective writes to D[17:0].

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 configuration)
Max Clock Frequency 200 MHz - defines maximum sustained transaction rate of 400 million transfers/sec (DDR)
Read Latency 1.5 cycles with DLL enabled - ensures deterministic timing margin for 500 MT/s data capture using CQ/CQ
Core Supply Voltage 1.8 V ±0.1 V - powers internal logic and array; requires tight regulation for stable QDR II pipeline operation
I/O Supply Range 1.4 V to 1.8 V - supports HSTL-18 compatible signaling and impedance tuning via ZQ pin
Burst Length 2 words per access - delivers 36 bits per cycle on Q[17:0], optimizing bandwidth efficiency over discrete address strobes
Package 165-ball FBGA (15 × 17 × 1.4 mm) - enables high-density routing with controlled impedance for >250 MHz clock domains

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edges of K/K; supports byte-write via BWS[1:0] for partial-word updates
Q[17:0] Synchronous read data output Driven on rising edges of C/C; tristated automatically when RPS deasserted
RPS / WPS Port select controls Active-low signals sampled on K edge; enable independent read/write arbitration without shared control bus
C / C, K / K Differential clock inputs K/K capture inputs; C/C launch outputs; eliminate skew between controller and memory in multi-device systems
CQ / CQ Echo clocks Free-running, phase-aligned copies of C/C; simplify source-synchronous capture at FPGA/ASIC receiver
ZQ Output impedance calibration Connects to external resistor to ground; sets Q[17:0] and CQ/CQ driver strength to match 50 Ω trace impedance
DOFF DLL disable control Active-low pin; forces QDR I mode (1-cycle latency) for backward compatibility or lower-frequency operation

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead and contention, enabling full-duplex 500 MT/s throughput on shared data bus
DDR interfaces on both ports Doubles effective data rate without increasing clock frequency - critical for sustaining line-rate packet buffering
Echo clocks (CQ/CQ) Provide source-synchronous timing reference at receiver, reducing setup/hold margin requirements by >150 ps
HSTL-18 compatible I/O Ensures signal integrity at 500 MT/s with programmable drive strength and on-die termination via ZQ calibration
JTAG 1149.1 test access Enables boundary-scan testing of high-speed memory interconnects without requiring additional test fixtures

Applications

Layer-2/Layer-3 Switch Buffering Telecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switching ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress parser and egress scheduler, synchronized to 200 MHz system clock.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling wire-speed forwarding at 10 Gbps+ with sub-10 ns latency variation.

Use Scenario: Holding ATM cell payloads and control descriptors in carrier-grade SONET/SDH line interface modules.

IC Role / Device Role / Timing Role: High-reliability burst memory interfacing directly to TI TMS320C64x+ DSP or Xilinx Virtex-5 FPGA fabric.

Use Value: Echo-clock–driven data capture ensures deterministic timing closure across 16-layer backplanes with >30-inch trace lengths.

Network Processor Lookaside Cache High-Frequency Trading Engine Buffer

Use Scenario: Serving as fast-access scratchpad for deep packet inspection engines performing real-time TCP reassembly and pattern matching.

IC Role / Device Role / Timing Role: Offload memory for NPU microengines; accessed via dedicated AXI4 or PLB bus with burst coalescing.

Use Value: 2-word burst reduces address bus toggling by 50%, lowering dynamic power consumption in thermally constrained NPU modules.

Use Scenario: Temporarily staging market feed snapshots and order book deltas in ultra-low-latency FPGA-based trading platforms.

IC Role / Device Role / Timing Role: Deterministic latency SRAM used between feed handler and strategy core, clocked from low-jitter OCXO-derived 200 MHz reference.

Use Value: DLL-stabilized 1.5-cycle latency guarantees worst-case read response ≤7.5 ns - meeting sub-100 ns end-to-end processing SLA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit QDR II+, 167 MHz max, 1.5 V core, supports 1-cycle latency only Lacks DLL and echo clocks; requires tighter board-level skew control Prefer when system clock <167 MHz and echo-clock infrastructure is unavailable
ISSI IS61WV102418B 18-Mbit sync SRAM, single-port, 166 MHz, 3.3 V I/O, no DDR or burst No concurrent access; limited to half the bandwidth and higher latency per word Only suitable for cost-sensitive, non-concurrent buffering where 200 MHz timing is not required

Compared with IDT72T36120L10BG and IS61WV102418B, the CY7C1412BV18-200BZI uniquely delivers 200 MHz DDR dual-port operation with DLL-aligned echo clocks-enabling robust 500 MT/s data transfer in thermally and electrically demanding telecom and networking hardware.

Availability

CY7C1412BV18-200BZI is available at Aetrix Electronics and suitable for network switch buffering, telecom line card design, and FPGA-based high-frequency trading systems requiring stable component supply, long-term lifecycle support, and guaranteed FBGA-165 sourcing.

Supply support for CY7C1412BV18-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR II SRAM product line targets high-speed packet-processing infrastructure, delivering deterministic latency, concurrent access, and DDR signaling to replace legacy SRAM and DRAM in bandwidth-critical control-plane and data-plane applications.

FAQ

What is the function of the DOFF pin on CY7C1412BV18-200BZI?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). For standard QDR II operation at 200 MHz, DOFF must be tied HIGH via ≤10 kΩ pull-up to VDDQ.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external precision resistor (typically 50 Ω) to ground, enabling on-die calibration of HSTL-18 output drivers. This adjusts Q[17:0] and echo clock (CQ/CQ) output impedance to 0.2 × RQ (e.g., 10 Ω for 50 Ω reference), ensuring impedance matching to PCB traces and minimizing signal reflections at 500 MT/s.

Can CY7C1412BV18-200BZI operate with only one clock signal?

Yes - it supports single-clock mode where K serves as both input and output clock. In this configuration, C and C are unused, and data is launched on K/K edges. However, echo clocks (CQ/CQ) remain functional and aligned to K, preserving source-synchronous capture capability without requiring separate C/C routing.

What is the purpose of BWS[1:0] in write operations?

BWS[1:0] (Byte Write Select) are active-low signals that control which 9-bit byte segments of D[17:0] are written during each 18-bit transfer. BWS0 governs D[8:0], BWS1 governs D[17:9]. Deasserting either allows selective update of half-words - essential for efficient read-modify-write sequences without full-word overwrite overhead.

CY7C1412BV18-200BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1412BV18-200BZI FAQ

1.How can I place an order for CY7C1412BV18-200BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1412BV18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1412BV18-200BZI reliable?

The price and inventory of CY7C1412BV18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412BV18-200BZI is usually 5 days.

3.What payment methods are accepted for CY7C1412BV18-200BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412BV18-200BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1412BV18-200BZI?

CY7C1412BV18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1412BV18-200BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1412BV18-200BZI?

For technical support, including CY7C1412BV18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412BV18-200BZI requirements.

6.How does Aetrix verify that CY7C1412BV18-200BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1412BV18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412BV18-200BZI meets industry standards.

7.What is the process for return or replacement of CY7C1412BV18-200BZI?

All CY7C1412BV18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412BV18-200BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1412BV18-200BZI part is unused and in its original packaging.

Return procedure for CY7C1412BV18-200BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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