Infineon Technologies CY7C1412BV18-200BZI
- Part No.:
- CY7C1412BV18-200BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1412BV18-200BZI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,240
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Product details
Overview
CY7C1412BV18-200BZI from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 2M × 18 organization, 250 MHz clock support (200 MHz rated), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces on both, 2-word burst transfers, and DLL-enabled 1.5-cycle read latency. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1412BV18-200BZI datasheet, CY7C1412BV18-200BZI pinout, CY7C1412BV18-200BZI application, or CY7C1412BV18-200BZI equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted data capture timing, HSTL-18 output drive, JTAG 1149.1 testability, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
The CY7C1412BV18-200BZI uses synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch, enabling concurrent read/write operations without bus turnaround. Its Delay Lock Loop (DLL) aligns echo clocks CQ/CQ to output clocks for precise DDR data sampling at 500 MT/s.
It supports two operating modes: DLL-on mode (1.5-cycle read latency, up to 250 MHz) and DLL-off mode (1-cycle latency, QDR I timing, max 167 MHz). Address inputs are multiplexed across both ports, with RPS/WPS controlling port activation and BWS[1:0] enabling byte-selective writes to D[17:0].
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 200 MHz - defines maximum sustained transaction rate of 400 million transfers/sec (DDR) |
| Read Latency | 1.5 cycles with DLL enabled - ensures deterministic timing margin for 500 MT/s data capture using CQ/CQ |
| Core Supply Voltage | 1.8 V ±0.1 V - powers internal logic and array; requires tight regulation for stable QDR II pipeline operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-18 compatible signaling and impedance tuning via ZQ pin |
| Burst Length | 2 words per access - delivers 36 bits per cycle on Q[17:0], optimizing bandwidth efficiency over discrete address strobes |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - enables high-density routing with controlled impedance for >250 MHz clock domains |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K/K; supports byte-write via BWS[1:0] for partial-word updates |
| Q[17:0] | Synchronous read data output | Driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Port select controls | Active-low signals sampled on K edge; enable independent read/write arbitration without shared control bus |
| C / C, K / K | Differential clock inputs | K/K capture inputs; C/C launch outputs; eliminate skew between controller and memory in multi-device systems |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of C/C; simplify source-synchronous capture at FPGA/ASIC receiver |
| ZQ | Output impedance calibration | Connects to external resistor to ground; sets Q[17:0] and CQ/CQ driver strength to match 50 Ω trace impedance |
| DOFF | DLL disable control | Active-low pin; forces QDR I mode (1-cycle latency) for backward compatibility or lower-frequency operation |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates bus turnaround overhead and contention, enabling full-duplex 500 MT/s throughput on shared data bus |
| DDR interfaces on both ports | Doubles effective data rate without increasing clock frequency - critical for sustaining line-rate packet buffering |
| Echo clocks (CQ/CQ) | Provide source-synchronous timing reference at receiver, reducing setup/hold margin requirements by >150 ps |
| HSTL-18 compatible I/O | Ensures signal integrity at 500 MT/s with programmable drive strength and on-die termination via ZQ calibration |
| JTAG 1149.1 test access | Enables boundary-scan testing of high-speed memory interconnects without requiring additional test fixtures |
Applications
| Layer-2/Layer-3 Switch Buffering | Telecom Line Card Packet Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switching ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress parser and egress scheduler, synchronized to 200 MHz system clock. Use Value: Concurrent read/write eliminates arbitration stalls, enabling wire-speed forwarding at 10 Gbps+ with sub-10 ns latency variation. |
Use Scenario: Holding ATM cell payloads and control descriptors in carrier-grade SONET/SDH line interface modules. IC Role / Device Role / Timing Role: High-reliability burst memory interfacing directly to TI TMS320C64x+ DSP or Xilinx Virtex-5 FPGA fabric. Use Value: Echo-clock–driven data capture ensures deterministic timing closure across 16-layer backplanes with >30-inch trace lengths. |
| Network Processor Lookaside Cache | High-Frequency Trading Engine Buffer |
|
Use Scenario: Serving as fast-access scratchpad for deep packet inspection engines performing real-time TCP reassembly and pattern matching. IC Role / Device Role / Timing Role: Offload memory for NPU microengines; accessed via dedicated AXI4 or PLB bus with burst coalescing. Use Value: 2-word burst reduces address bus toggling by 50%, lowering dynamic power consumption in thermally constrained NPU modules. |
Use Scenario: Temporarily staging market feed snapshots and order book deltas in ultra-low-latency FPGA-based trading platforms. IC Role / Device Role / Timing Role: Deterministic latency SRAM used between feed handler and strategy core, clocked from low-jitter OCXO-derived 200 MHz reference. Use Value: DLL-stabilized 1.5-cycle latency guarantees worst-case read response ≤7.5 ns - meeting sub-100 ns end-to-end processing SLA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR II+, 167 MHz max, 1.5 V core, supports 1-cycle latency only | Lacks DLL and echo clocks; requires tighter board-level skew control | Prefer when system clock <167 MHz and echo-clock infrastructure is unavailable |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, single-port, 166 MHz, 3.3 V I/O, no DDR or burst | No concurrent access; limited to half the bandwidth and higher latency per word | Only suitable for cost-sensitive, non-concurrent buffering where 200 MHz timing is not required |
Compared with IDT72T36120L10BG and IS61WV102418B, the CY7C1412BV18-200BZI uniquely delivers 200 MHz DDR dual-port operation with DLL-aligned echo clocks-enabling robust 500 MT/s data transfer in thermally and electrically demanding telecom and networking hardware.
Availability
CY7C1412BV18-200BZI is available at Aetrix Electronics and suitable for network switch buffering, telecom line card design, and FPGA-based high-frequency trading systems requiring stable component supply, long-term lifecycle support, and guaranteed FBGA-165 sourcing.
Supply support for CY7C1412BV18-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR II SRAM product line targets high-speed packet-processing infrastructure, delivering deterministic latency, concurrent access, and DDR signaling to replace legacy SRAM and DRAM in bandwidth-critical control-plane and data-plane applications.
FAQ
What is the function of the DOFF pin on CY7C1412BV18-200BZI?
The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). For standard QDR II operation at 200 MHz, DOFF must be tied HIGH via ≤10 kΩ pull-up to VDDQ.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external precision resistor (typically 50 Ω) to ground, enabling on-die calibration of HSTL-18 output drivers. This adjusts Q[17:0] and echo clock (CQ/CQ) output impedance to 0.2 × RQ (e.g., 10 Ω for 50 Ω reference), ensuring impedance matching to PCB traces and minimizing signal reflections at 500 MT/s.
Can CY7C1412BV18-200BZI operate with only one clock signal?
Yes - it supports single-clock mode where K serves as both input and output clock. In this configuration, C and C are unused, and data is launched on K/K edges. However, echo clocks (CQ/CQ) remain functional and aligned to K, preserving source-synchronous capture capability without requiring separate C/C routing.
What is the purpose of BWS[1:0] in write operations?
BWS[1:0] (Byte Write Select) are active-low signals that control which 9-bit byte segments of D[17:0] are written during each 18-bit transfer. BWS0 governs D[8:0], BWS1 governs D[17:9]. Deasserting either allows selective update of half-words - essential for efficient read-modify-write sequences without full-word overwrite overhead.
CY7C1412BV18-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1412BV18-200BZI FAQ
1.How can I place an order for CY7C1412BV18-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1412BV18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1412BV18-200BZI reliable?
The price and inventory of CY7C1412BV18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412BV18-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1412BV18-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412BV18-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1412BV18-200BZI?
CY7C1412BV18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1412BV18-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1412BV18-200BZI?
For technical support, including CY7C1412BV18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412BV18-200BZI requirements.
6.How does Aetrix verify that CY7C1412BV18-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1412BV18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412BV18-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1412BV18-200BZI?
All CY7C1412BV18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412BV18-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1412BV18-200BZI part is unused and in its original packaging.
Return procedure for CY7C1412BV18-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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