Infineon Technologies CY7C1412KV18-250BZCT

Overview

CY7C1412KV18-250BZCT from Cypress Semiconductor is a 2M × 18 (36-Mbit) QDR® II SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features independent read/write ports, DDR interfaces on both ports (500 Mbps per pin), echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers and packet memory applications.

For engineers reviewing the CY7C1412KV18-250BZCT datasheet, CY7C1412KV18-250BZCT pinout, CY7C1412KV18-250BZCT application, or CY7C1412KV18-250BZCT equivalent, key selection criteria include 250 MHz operation with 1.5-cycle read latency (DOFF = HIGH), 165-ball FBGA package compatibility, dual-clock domain support (K/K and C/C), byte write select (BWS[1:0]), and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined read and write operations using separate address latching on alternate rising edges of K and K clocks. Internal self-timed writes eliminate external write pulse timing constraints, while echo clocks CQ/CQ align with output data edges to simplify high-speed capture at the controller.

The device supports both single- and dual-clock domains: in dual-clock mode, K/K drive inputs and C/C drive outputs with deskew capability; in single-clock mode, K/K serve both input and output timing. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency, enabling trade-offs between latency and bandwidth utilization.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 1.0 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1412KV18-300BZCT, the -250BZCT reduces power by 90 mA at full load and relaxes timing closure requirements; versus AS7C33618A-250BIN, it delivers 4× higher effective bandwidth and eliminates bus turnaround delays but requires QDR-aware controller firmware and layout discipline for echo clock routing.

Availability

CY7C1412KV18-250BZCT is available at Aetrix Electronics and suitable for packet buffer memory, network switch fabric interfaces, and telecom line card control plane applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1412KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR II SRAM product line, designed specifically for high-throughput, low-latency buffering in packet-switched networks, telecom infrastructure, and test equipment where deterministic concurrent access is mandatory.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency mode for optimized bandwidth efficiency; when LOW, it selects 1-cycle latency for minimal access delay. This setting affects timing margins for C/C clock-to-data alignment and must be fixed at power-up-no dynamic switching is supported during operation.

Can CY7C1412KV18-250BZCT operate with only one clock input (K) instead of K and K?

Yes-it supports single-clock domain operation where K serves as both input and output timing reference. In this mode, C and C are unused, and CQ/CQ derive from K. However, dual-clock mode (K/K for inputs, C/C for outputs) is required to exploit echo clock deskew benefits and achieve full 250 MHz performance with relaxed board layout constraints.

How does byte write select (BWS[1:0]) work in practice for partial writes?

BWS[1:0] controls two independent 9-bit lanes: BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is LOW, corresponding bytes are written; when HIGH, those bytes retain prior values. This allows atomic 9-bit updates-e.g., modifying only packet priority bits in a 18-bit header word without disturbing timestamp fields-reducing write amplification in buffer management.

Is JTAG boundary scan functional on CY7C1412KV18-250BZCT out-of-the-box?

JTAG is enabled by default at power-up and compliant with IEEE 1149.1. No configuration is needed to access TAP registers, perform IDCODE reads, or execute EXTEST/INTEST instructions. The TDO, TCK, TMS, and TDI pins are dedicated and do not share functions with memory I/O-ensuring test access remains available even when memory ports are actively used.