Infineon Technologies CY7C1412KV18-250BZI

Overview

CY7C1412KV18-250BZI from Cypress Semiconductor is a 2M × 18 (36-Mbit) QDR® II SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), and echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and switch fabric memory subsystems.

For engineers reviewing the CY7C1412KV18-250BZI datasheet, CY7C1412KV18-250BZI pinout, CY7C1412KV18-250BZI application, or CY7C1412KV18-250BZI equivalent, key selection criteria include 250 MHz clock timing margin, 18-bit × 2-word burst width, FBGA-165 package compatibility, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, and HSTL-18 I/O drive compliance.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a single multiplexed address bus, with address latching on alternate rising edges of K/K clocks. Internal self-timed writes eliminate external write pulse timing constraints, while dual output clocks (C/C) and echo clocks (CQ/CQ) enable deterministic deskewed data capture at 500 Mbps per pin.

The device uses a PLL to align output data edges with C/C clock transitions, supports byte-write masking via BWS[1:0], and maintains full data coherency across concurrent read/write operations. Read latency is configurable via DOFF: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH), matching legacy QDR I or optimized QDR II timing modes respectively.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1412KV18-300BZI, the -250BZI reduces power by 90 mA at same temperature and relaxes timing closure; versus AS7C362000B-250BIN, it enables direct 1.8 V SoC integration without voltage translation, lowering BOM cost and signal integrity risk.

Availability

CY7C1412KV18-250BZI is available at Aetrix Electronics and suitable for high-speed network switch fabric, telecom line card buffering, and optical transport network framer memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1412KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with headquarters in San Jose, CA.

CY7C1412KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-250BZI?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for QDR II timing compliance; when LOW, it selects 1-cycle latency for backward compatibility with QDR I controllers. This pin is sampled synchronously on the rising edge of the K clock and must be held stable during initialization.

Can CY7C1412KV18-250BZI operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate clock generators. In this configuration, data is clocked in/out on K/K edges, and echo clocks CQ/CQ track K/K instead of C/C. Setup/hold timing margins tighten slightly, but full functionality including burst and byte-write remains intact.

What is the purpose of BWS[1:0] pins and how are they used in byte-write operations?

BWS[1:0] are active-low byte write select signals that enable partial 9-bit writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit lane is ignored during write cycles, preserving prior data in those bits. Both signals are sampled synchronously with D[17:0] on the rising edge of K, allowing fine-grained data updates without full-word overwrites.

Is JTAG boundary scan supported on CY7C1412KV18-250BZI and how is it enabled?

Yes - the device implements IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. JTAG is enabled by default at power-up; no external configuration is required. Boundary scan supports full pin-level interconnect testing and can be used for in-system programming of associated configuration devices, provided the host controller implements TAP controller logic.