Infineon Technologies CY7C1412KV18-300BZXC

Overview

CY7C1412KV18-300BZXC from Cypress Semiconductor is a 2M × 18 (36-Mbit) QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with two-word burst, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers and packet memory in telecom line cards.

For engineers reviewing the CY7C1412KV18-300BZXC datasheet, CY7C1412KV18-300BZXC pinout, CY7C1412KV18-300BZXC application, or CY7C1412KV18-300BZXC equivalent, key selection criteria include dual-port concurrency, 1.5-cycle read latency (DOFF = HIGH), HSTL-18 I/O compatibility, 165-ball FBGA (13 × 15 × 1.4 mm) package, and JTAG 1149.1 test support.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write pipelines, each with dedicated address latching on alternating K/K edges and DDR data transfer on C/C or K/K. Its architecture eliminates bus turnaround by separating D[17:0] inputs and Q[17:0] outputs.

The device uses an internal PLL to align echo clocks (CQ/CQ) with output clocks (C/C), enabling precise source-synchronous data capture at 600 Mbps. Byte write select (BWS[1:0]) supports granular 9-bit writes per 18-bit word, and DOFF pin configures read latency between 1-cycle (LOW) and 1.5-cycle (HIGH) modes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1412KV18-300BZXC uniquely delivers 300 MHz dual-port concurrency, 1.8 V core compatibility, and echo-clock timing support - making it the only option for 10G+ line-rate packet memory where bandwidth, latency, and signal integrity are jointly constrained.

Availability

CY7C1412KV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, and telecom line card memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1412KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1412KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in packet-switched infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-300BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it reverts to 1-cycle latency like QDR I devices. This setting directly affects the C/C clock-to-Q[17:0] output delay and must be set before initialization.

Does CY7C1412KV18-300BZXC support byte-level write masking?

Yes - it uses BWS[1:0] (Byte Write Select) inputs to mask 9-bit subwords within the 18-bit D[17:0] bus. BWS0 controls D[8:0], BWS1 controls D[17:9]. Both are sampled synchronously with K clock edges during write operations, allowing partial-word updates without read-modify-write cycles.

Can CY7C1412KV18-300BZXC operate with only one clock domain (K-only)?

Yes - it supports single-clock mode where K serves both input and output clocking. In this mode, C/C are unused, CQ/CQ track K, and Q[17:0] data is driven on K/K edges. This simplifies board layout but sacrifices deskew capability and limits maximum frequency to 250 MHz per Cypress specifications.

Is the 165-ball FBGA package of CY7C1412KV18-300BZXC pin-compatible with other QDR II densities?

No - while CY7C1425KV18 (4M×9), CY7C1412KV18 (2M×18), and CY7C1414KV18 (1M×36) share the same 165-ball FBGA footprint and ball pitch, their signal assignments differ significantly (e.g., BWS count, address width, D/Q width). Direct substitution requires PCB redesign and firmware adaptation.