Infineon Technologies CY7C1412KV18-300BZXI
- Part No.:
- CY7C1412KV18-300BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1412KV18-300BZXI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1412KV18-300BZXI from Cypress Semiconductor is a 2M × 18, 36-Mbit QDR® II SRAM with two-word burst architecture, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers in packet switching ASICs.
For engineers reviewing the CY7C1412KV18-300BZXI datasheet, CY7C1412KV18-300BZXI pinout, CY7C1412KV18-300BZXI application, or CY7C1412KV18-300BZXI equivalent, key selection criteria include dual-port concurrency, 1.5-cycle read latency (DOFF = HIGH), HSTL-compatible 165-ball FBGA package, and JTAG 1149.1 test support.
Technical Context
This SRAM implements true dual-port QDR II architecture: independent read and write ports share one address bus but use separate clock domains (K/K for addressing, C/C for output timing) and dedicated data paths (D[17:0] inputs, Q[17:0] outputs). It eliminates bus turnaround via full separation of input and output data lanes.
The device uses internal PLL to align echo clocks (CQ/CQ) with output clocks (C/C), enabling precise source-synchronous capture at 600 MHz DDR. Read latency is configurable-1 cycle when DOFF = LOW (QDR I mode), 1.5 cycles when DOFF = HIGH (QDR II mode)-with synchronous self-timed writes and byte-write select (BWS[1:0]) granularity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 organization) |
| Clock Frequency | 300 MHz - supports 600 MT/s DDR throughput per port |
| Core Supply (VDD) | 1.8 V ±0.1 V - defines logic threshold and power integrity margin |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - enables interoperability with 1.5 V or 1.8 V memory controllers |
| Read Latency | 1.5 cycles (DOFF = HIGH) - determines minimum pipeline depth for controller FIFO design |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed routing |
| Standby Current | Max 50 mA at 300 MHz - critical for thermal budget in dense packet buffer arrays |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Write data inputs | 18-bit synchronous data bus sampled on rising edge of K clock; supports byte-selectable writes via BWS[1:0] |
| Q[17:0] | Read data outputs | 18-bit synchronous outputs driven on rising edges of C/C clocks; tristated when RPS is deasserted |
| K, K | Address clock inputs | Differential pair latching read/write addresses and control signals; only rising edges used for sampling |
| C, C | Output data clocks | Differential pair controlling Q[17:0] timing; used with CQ/CQ for flight-time deskew in multi-device systems |
| CQ, CQ | Echo clocks | Free-running copies of C/C, phase-aligned to simplify controller data capture without complex delay tuning |
| RPS, WPS | Port select controls | Active-low enables for read/write ports; allow independent port gating and depth expansion across multiple devices |
| BWS[1:0] | Byte write selects | Two active-low signals enabling 9-bit sub-word writes within 18-bit word - preserves partial data integrity |
| DOFF | Latency mode control | High = 1.5-cycle QDR II read latency; Low = 1-cycle QDR I compatibility mode |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Enables concurrent read+write in same cycle - eliminates bus turnaround overhead in switch fabric buffers |
| Two-word burst architecture | Guarantees two sequential 18-bit words per access - matches typical packet header + payload fetch patterns |
| HSTL Class I output drivers | Provides controlled impedance (25 Ω) and fast edge rates compatible with 600 MT/s signaling on FR4 PCBs |
| JTAG 1149.1 boundary scan | Enables in-system verification of interconnect integrity for high-density BGA routing in telecom line cards |
| Programmable drive strength | Adjusts output current to match trace impedance and reduce crosstalk in multi-drop memory subsystems |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as low-latency, concurrent-access buffer between ingress parser and egress scheduler engines. Use Value: 300 MHz clock + 1.5-cycle latency enables ≤5 ns read access time, supporting 10 Gbps line-rate processing with zero packet loss under burst traffic. |
Use Scenario: Holding real-time voice/video frame descriptors and channel state tables in carrier-grade DSLAM or OLT line cards. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with DSP co-processors and ATM cell processors. Use Value: Separate RPS/WPS controls allow simultaneous descriptor reads and status writes without arbitration delay - sustaining >2.4 GB/s aggregate bandwidth. |
| Baseband Processor Memory | Test Equipment Pattern Memory |
|
Use Scenario: Serving as symbol-level buffer in LTE/5G baseband ASICs for FFT/IFFT pre/post-processing pipelines. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic 1.5-cycle read response to digital front-end controllers. Use Value: Echo clocks (CQ/CQ) eliminate board-level skew compensation, reducing FPGA logic overhead by ~12% in timing-critical capture blocks. |
Use Scenario: Storing high-speed stimulus/response vectors in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Deterministic latency memory enabling precise nanosecond-level signal generation and capture alignment. Use Value: JTAG 1149.1 support allows full boundary scan of memory interface traces - cutting debug time for signal integrity failures by >40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR II+, 100 MHz max clock, 1.5 V core, no echo clocks | Limited to lower bandwidth systems (<2.4 GB/s); lacks CQ/CQ for source-synchronous capture | Select when system clock <200 MHz and echo clock simplification is unnecessary |
| ISSI IS61WV102418BLL-10BLI | 18-Mbit sync SRAM, single-port, 10 ns async access, no DDR or burst | Not concurrent-capable; requires external arbitration; 50% lower density and bandwidth | Only suitable for cost-sensitive, non-real-time buffering where latency tolerance >15 ns |
Compared with IDT72T36120L10BG and IS61WV102418BLL-10BLI, CY7C1412KV18-300BZXI delivers 3× higher bandwidth, deterministic 1.5-cycle latency, and echo-clock-assisted timing closure - making it uniquely suited for 10G+ packet processing where concurrent access and sub-10 ns timing margins are mandatory.
Availability
CY7C1412KV18-300BZXI is available at Aetrix Electronics and suitable for network packet buffers, telecom line card caches, baseband processor memories, and ATE pattern stores requiring stable component supply across multi-year production cycles.
Supply support for CY7C1412KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with focus on signal integrity and timing precision.
CY7C1412KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic-latency, concurrent-access buffering in packet-switched infrastructure - targeting ASIC/FPGA-based networking and baseband applications demanding >2 GB/s sustained bandwidth.
FAQ
What is the function of the DOFF pin on CY7C1412KV18-300BZXI?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle read latency and two-word burst; when LOW, it reverts to QDR I mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and must be stable before initialization completes.
Can CY7C1412KV18-300BZXI operate with only a single clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), eliminating need for separate address and output clocks. In this configuration, Q[17:0] outputs are clocked by K/K instead of C/C, and echo clocks CQ/CQ track K/K. All timing parameters shift accordingly per datasheet Table 12.
How does the BWS[1:0] signal control byte writes in the 2M × 18 configuration?
BWS[0] enables writing to D[8:0], and BWS[1] enables writing to D[17:9]. Both are active-low and sampled on the same K clock edge as data. When BWS[0] is HIGH, D[8:0] is ignored; when BWS[1] is HIGH, D[17:9] is ignored - allowing partial 9-bit updates without disturbing the complementary half-word.
Is the 165-ball FBGA package of CY7C1412KV18-300BZXI compatible with standard reflow profiles?
Yes - the Pb-free 165-ball FBGA (package code BZXI) complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260°C, 60-second duration above 217°C). Board layout must observe 0.8 mm ball pitch, 0.35 mm pad diameter, and controlled-impedance routing for K/K and C/C pairs.
CY7C1412KV18-300BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1412KV18-300BZXI FAQ
1.How can I place an order for CY7C1412KV18-300BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1412KV18-300BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1412KV18-300BZXI reliable?
The price and inventory of CY7C1412KV18-300BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412KV18-300BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1412KV18-300BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412KV18-300BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1412KV18-300BZXI?
CY7C1412KV18-300BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1412KV18-300BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1412KV18-300BZXI?
For technical support, including CY7C1412KV18-300BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412KV18-300BZXI requirements.
6.How does Aetrix verify that CY7C1412KV18-300BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1412KV18-300BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412KV18-300BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1412KV18-300BZXI?
All CY7C1412KV18-300BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412KV18-300BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1412KV18-300BZXI part is unused and in its original packaging.
Return procedure for CY7C1412KV18-300BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1412KV18-300BZXI Tags

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